研究成果(論文発表)

平成11年度以降の論文発表、研究会/大会論文・報告・展望・解説等、口頭発表の一覧です。

論文・プロシーディング研究会・解説論文一覧

 論文・プロシーディング

【2010年】

  1. Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-W semiconductor spintronic devices : M. Miyao, K. Hamaya, T. Sadoh, H. Ito, Y. Maeda (Thin Solid Film 518, pp.S273-277,(Jan.2010))

  2. Formation of single-crystalline Ge stripes on quortz substrates by SiGe mixing-triggered liquid-phase epitaxy : K. Toko, T. Tanaka, T.h Sadoh and M. Miyao (Thin Solid Films 518, pp.S179-181,(Jan. 2010))

  3. Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy : T. Tanaka, M. Tanaka, T. Sadoh and M. Miyao(Thin Solid Films 518, pp.S170-173,(Jan. 2010))

  4. Al-induced low-temparature crystallization of Si1-xGex (0<x<1) by controlling layer exchange process:M. Kurosawa, T. Sadoh, M. Miyao (Thin Solid Films 518, pp.S181-185,(Jan. 2010))

  5. Liquod-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed : K. Toko, T. Sakane, T. Tanaka, T. Sadoh, M. Miyao (Thin Solid Films 518, pp.S181-185(Jan. 2010))

  6. Epitaxial growth of a full-Heusler alloy Co2FeSi on silicon by low-temparature :molecular beam epitaxy : S. Yamada, K. Yamamoto, K. Ueda, Y. Ando, K. Hamaya, T. Sadoh, M. Miyao (Thin Solid Films 518, pp.S278-280,(Jan. 2010))

  7. High Quority Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-doping Controlled Rapid Melting Growth: T. Tanaka, K. Toko, T. Sadoh, M. Miyao (Applied Physics Express, Vol. 3, No. 3, 031301,(Mar. 2010))

  8. Significant growth-temparature dependence of ferromagnetic properties for Co2FeSi/Si(111) prepared by low-temparature molecular beam epiatxy : S. Yamada, K. Hamaya, K. Yamamoto, T. Murakami, K. Mibu, and M. Miyao (Appl. Phys. Lett, Vol.96, No.082511 pp1-3, (Feb. 2010))

  9. Highly ordered Co2FeSi Heusler alloys grown on Ge(111) by low-temperature molecular beam epitaxy : K. Kasahara, K. Yamamoto, S. Yamada, T. Murakami, K. Hamaya, K. Mibu, and M. Miyao (Journal of Applied Physics Vol.107, No.9 , pp.B105-1-3, (April 19, 2010))


  10. Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces : K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. Sadoh, and M. Miyao ( Applied Physics Letters Vol.96, No. 16, pp.2104-1-3, 19 (April 2010))

  11. Microscopic studies of metal-induced lateral crystallization in SiGe : M. Itakura, S. Masumori, N. Kuwano, H. Kanno, T. Sadoh,.and M. Miyao (Applied Physics Letters Vol.96, No.18, pp2101-1-3 (May 2010)

  12. Electrical Detection of Spin Transport in Si Using High-quality Fe3Si/Si Schottky Tunnel Contacts : Y. Ando, K. Kasahara, Y. Enomoto, T. Murakami, K. Hamaya, T. Kimura, K. Sawano, and M. Miyao ( J. Magn. Soc. Jpn. Vol.34, No.3, pp316-322 (May 2010) (in Japanese))


  13. High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth : K. Toko, T. Tanaka, T. Sadoh, and M. Miyao (Japanese Journal of Applied Physics Vol.49, No. 04DA08, pp1-4, (Apr. 2010))

  14. (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique : K. Toko, M. Kurosawa, H. Yokoyama, N. Kawabata, T. Sakane, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao (Applied Physics Express Vol.3, pp.075603-1-3, (June 2010))


  15. Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe3Si/Si Spin-Valve Devices : Y. Ando, K. Kasahara, K. Yamane, K. Hamaya, K. Sawano, T. Kimura, and M. Miyao ( Applied Physics Express, Vol. 3, No.093001-1-3, (Aug. 2010))


  16. Relaxation Mechanism of SiGe-on-Insulator by Oxidation-Induced Ge Condensation with H+Irradiation and Postannealing : Masanori Tanaka, Taizoh Sadoh, and Masanobu Miyao (Journal of The Electrochemical Society, Vol.157 , No.11, pp. H991-H996, (Sep.2010)


  17. Defect-free Ge-on-insulator with (100) , (110), and (111) orientations by growth-directions -selected rapid-melting growth : K. Toko, T. Tanaka, Y. Ohta, T. Sadoh, and M. Miyao (Applied Physics Letters, Vol.97, No.15, pp.152101-1-3, (Oct. 2010))


  18. Ultrashallow Ohmic contacts for n-type Ge by Sb-doping : K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao, and Y. Shiraki (Applied Physics Letters, Vol 97, No.16, pp.162108-1-3, (Oct. 2010))


  19. High-quality epitaxial CoFe/Si?111… heterostructures fabricated by low-temperature molecular beam epitaxy : Y. Maeda, K. Hamaya, S. Yamada, Y. Ando, K. Yamane, and M. Miyao (Applied Physics letters, Vol. 97, No.19, 192501-1-3, (Nov. 2010))


  20. Low-temperature grown quaternary Heusler-compound Co2Mn1-xFexSi Films on Ge(111) : S. Yamada, K. Hamaya, T. Murakami, B. Varaprasad, Y. K. Takahashi, A. Rajanikanth, K. Hono, and M. Miyao (Journal of Applied Physics)(投稿中)


  21. SiGeミキシング誘起溶融法による単結晶GOIGe on Insulator)形成のシード基板面方位・成長方向依存性:大田康晴 田中貴規 佐道泰造 宮尾正信(電子通信情報学会 信学技報 Vol. 110, No. 15, SDM2010-11, pp. 49-52, 平成224月)


  22. ガラス上におけるSiGe薄膜のアルミニウム誘起結晶化とその成長メカニズム:川畑直之,黒澤昌志,佐道泰造,宮尾正信 (電子通信情報学会 信学技報 Vol. 110, No. 15, SDM2010-11, pp. 13-17, 平成224月)

  23. インプリントSi種結晶からの溶融エピタキシャル成長による単結晶GOIの無欠陥形成:坂根 , 都甲 , 田中貴規, 佐道泰造, 宮尾正信(電子通信情報学会 信学技報 Vol. 110, No. 15, SDM2010-11, pp. 53-57, 平成224月)

【2009年】

  1. Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures : M. Kurosawa, Y. Tsumura, T. Sadoh and M. Miyao (Journal of the Korean Physical Society, Vol. 54, No. 1, pp. 451-454, (Jan. 2009))

  2. Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically at heterointerfaces : Y. Ando, K. Hamaya, K. Kasahara, K. Ueda, Y. Nozaki, T. Sadoh, Y. Maeda, K. Matsuyama, and M. Miyao (Journal Applied Physics, Vol.105, No.7, B102-1-3, (Feb. 2009))

  3. Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization : K. Toko, T. Sadoh, and M. Miyao (Japanese Journal of Applied Physics, Vol.48, No.3, B007-1-3, (Mar. 2009))

  4. Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate : M.Kurosawa, Y. Tsumira, T. Sadoh, and M. Miyao (Japanese Journal of Applied Physics, Vol.48, No.3, B002-1-3, (Mar. 2009))

  5. Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures : T. Sadoh, H. Ohta, and M. Miyao (Japanese Journal of Applied Physics, Vol.48, No.3, B004-1-3, (Mar. 2009))

  6. Giant Ge-on-Insulator Formation by Si-Ge Mixing-Triggered Liquid-Phase Epitaxy :M Miyao, T. Tanaka, K. Toko, and M.Tanaka (Applied Physics Express Vol.2, No.4 pp.045503-1-3, (Apr. 2009))

  7. Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) : K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, and M. Miyao (Physical Review Letters, Vol.102, No.13, pp.13204-1-3, (Apr. 2009))

  8. アルミニウム誘起層交換法によるSiGe/ガラスの低温成長: 黒澤昌志 ,川畑直之, 佐道泰造,宮尾正信 (電子情報通信学会 信学技報 SDM2009-5, pp19-21, (2009年 5月))

【2008年】

  1. Abnormal oxidation characteristics of SiGe/SOI structures depending on piled-up Ge fraction at SiO2/SiGe interface : M.Tanaka, T. Ohka, T. Sadoh, and M. Miyao (J. Appl. Phys. Vol.103, pp.054909-1-5, (Mar., 2008))

  2. Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator : T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao ( Jpn. J. Appl. Phys. Vol.47, No.3, pp1876-1879, (Mar., 2008))

  3. Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application : Y. Ando, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda, and M. Miyao (IEICE Transaction on Electronics, Vol.E91-C, No.5, pp708-711,(May, 2008))

  4. Low Temperature Formation of Multi-Layered Structures of Ferromagnetic Silicide Fe3Si and Ge : K. Ueda, Y. Ando, M. Kumano, T. Sadoh,Y. Maeda and M. Miyao (Applied Surface Science Vol.254, No.19, pp6215-6217, (July 2008))

  5. Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain : M. Tanaka, T. Sadoh, J. Morioka, T. Kitamura and M. Miyao (Applied Surface Science Vol.254, No.19, pp6226-6228, (July 2008))

  6. Low-Temperature Solid-Phase Crystallization of Amorphous SiGe Films on Glass by Imprint Technique : K. Toko, H. Kanno, A. Kenjo, T. Sadoh T. Asano, and M. Miyao (Solid-State Electronics Vol.52, No.8, pp1221-1224 (Aug. 2008))

  7. Low-Temperature Molecular Beam Epitaxy of a Ferromagnetic Full-Heusler Alloy Fe2MnSi on Ge(111) : K.Ueda, K. Hamaya, K.Yamamoto, Y. Ando, T.Sadoh, Y.Maeda, and M.Miyao (Appl. Phys. Lett. Vol.93, No.11, 112108, pp1-3 (Sep. 2008))

  8. Epitaxial Ferromagnetic Fe3Si/Si(111) Structures with High-Quality Heterointerfaces : K.Hamaya, K.Ueda, Y. Kishi, Y.Ando, T.Sadoh, and M.Miyao (Appl. Phys. Lett. Vol.93, No.13, 132117, pp1-3 (Sep. 2008))

  9. Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization : T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, and M.Miyao (ECS Transactions, Vol.16 No.10, pp219-222 (Oct. 2008))

  10. Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation : M. Tanaka, T. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, and M. Miyao (ECS Transactions, Vol.16 No.10, pp189-192 (Oct. 2008))

  11. Low Temperature Epitaxial Growth of Full Heusler Alloy Fe2MnSi on Ge(111) Substrates for Spintronics Application : K. Ueda, Y. Ando, K. Yamamoto, M. Kumano, K. Hamaya, T. Sadoh, K. Narumi,Y. Maeda, and M. Miyao (ECS Transactions, Vol.16 No.10, pp273-276 (Oct. 2008))

  12. Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor : Y. Kishi, M. Kumano, K. Ueda, T. Sadoh, and M. Miyao (ECS Transactions, Vol.16 No.10, pp277-280 (Oct. 2008))

  13. Comprehensive study of low temperature (<1000 °C) oxidation process in SiGe/SOI structures : M. Tanaka, T. Ohka, T. Sadoh, M. Miyao (Thin Solid Films Vol.517, No.1, pp251-253 (Nov. 2008))

  14. Low-temperature oriented growth in [CoPt/MgO]n multi-layer T. Sadoh , M. Kurosawa, M. Kimura, K. Ueda , M. Koyanagi, M. Miyao (Thin Solid Films Vol.517, No.1, pp430-433 (Nov. 2008))

  15. Atomically controlled hetero-epitaxy of Fe3Si/SiGe for spintronics application : M. Miyao , K. Ueda, Y. Ando, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda (Thin Solid Films Vol.517, No.1, pp181-183 (Nov. 2008))

  16. Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 films : K. Ueda, M. Kumano, T. Sadoh, M. Miyao (Thin Solid Films Vol.517, No.1, pp425-427 (Nov. 2008))

  17. Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence : Dong Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, T. Kitamura (Thin Solid Films Vol.517, No.1, pp31-33 (Nov. 2008))

  18. Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method : M. Tanaka, A. Kenjo, T. Sadoh, M. Miyao (Thin Solid Films Vol.517, No.1, pp248-250 (Nov. 2008))

  19. Temperature dependent epitaxial growth of ferromagnetic silicide Fe3Si on Ge substrate : K. Ueda, T. Sadoh, Y. Ando, T. Jonishi, K. Narumi, Y. Maeda, M. Miyao (Thin Solid Films Vol.517, No.1, pp422-424 (Nov. 2008))

  20. 次世代TFTに向けたa-Ge/石英の低温固相成長:中尾 勇兼, 都甲 薫, 野口 隆, 佐道泰造(電子情報通信学会 信学技報 SDM2008-17,pp.83-88 (2008年4月))

  21. 金属触媒誘起固相成長法による多結晶Ge/絶縁膜の低温形成 ~電界印加効果、触媒種効果~ :萩原貴嗣,都甲 薫,佐道泰造 (電子情報通信学会 信学技報 SDM2008-17,pp.101-105 (2008年4月))

  22. a-SiGe薄膜の低温結晶化機構の電子顕微鏡的研究:板倉 賢,宮尾正信(電子情報通信学会 信学技報 SDM2008- (2008年 )

  23. 縁膜上における非晶質SiGeのインデント誘起固相成長: 都甲 薫,佐道泰造  宮尾正信(電気学会・電子材料研究会資料 EFM-08-29 pp.31-34 (2008年9月))

【2007年】

  1. Ge-Channel Thin-Film Transistor with Schottky Source / Drain Fabricated by Low-Temperature Processing : T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao (Jpn. J. Appl. Phys. Vol.46, No.3B, pp.1250-1253 (Mar., 2007))

  2. Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application : Y. Ando, K. Ueda, M. Kumano, T. Sadoh, K. Narumi, Y. Maeda, and M. Miyao (電子情報通信学会 信学技報 ED2007-101, 6月号 pp.221-224)

  3. Ni-Imprint Induced Solid-Phase Crystallization in Si1-xGex(x:0-1) on Insulator : K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao ( Appliedd Physics Letters Vol.91, No.4, pp2111-1-2, (Jul., 2007))

  4. Influence of Substrate Orientation on Low-Temperature Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si:K. Ueda, R. Kizuka, H. Takeuchi, A. Kenjo, T. Sadoh,.and M. Miyao (Thin Solid Films Vol.515, No.22, pp.8250-8253 (Aug., 2007)) 

  5. Low-Temperature Epitaxial Growth of [Fe3Si/SiGe]n (n=1-2) Multi-Layered Structures for Spintronics Application : T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, and M. Miyao (ECS Transactions, Vol.11, No.6, pp473-480 (Oct., 2007))

  6. Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film : Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao, (ECS Transactions, Vol.11, No.6, pp395-402 (Oct., 2007))

  7. Effect of Fe/Si Ratio on Epitaxial Growth of Fe3Si on Ge Substrate : M. Kumano, Y. Ando, K. Ueda, T. Sadoh, K. Narumi, Y. Maeda, M. Miyao, (ECS Transactions, Vol.11, No.6, pp481-486 (Oct., 2007))

  8. Formation of Fe3Si/Ge/Fe3Si Multi-Layer by Double Heteroepitaxy on High Quality Fe3Si/Ge Substrate for Spintronics Application : K. Ueda, Y. Ando, M. Kumano, T. Sadoh, Y. Maeda and M.Miyao, (ECS Transactions, Vol.11, No.6, pp487-492 (Oct., 2007))

  9. Axial orientation of molecular-beam-epitaxy-grown Fe3Si/Ge hybrid structures and its degradation : Yoshihito Maeda, Takafumi Jonishi, Kazumasa Narumi, Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, and Masanobu Miyao ( Appl. Phys. Lett. Vol.91, No.17, pp.171910 -1-2, (Oct., 2007))

  10. High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain T. Sadoh, H. Kamizuru, A. Kenjo and M. Miyao (Materials Science Forum Vol.561-565, pp.1181-1184, (Nov., 2007))

  11. 触媒金属を用いた非晶質SiGe薄膜/ガラスの低温固相成長:菅野裕士,権丈 淳,佐道泰造,宮尾正信(電子情報通信学会 論文誌 3月号 pp.274-280 (2007年 3月))

  12. SiGe/SOI 構造の酸化現象とその解析:田中政典, 大賀 達夫, 佐道 泰造, 宮尾 正信 (電子情報通信学会 信学技報 Vol.107, No.13 ED2007-4月号 pp.1-4 (2007年 4月))

  13. Fe3Si/Ge(111)ヘテロエピタキシャル成長の軸配向性の評価:平岩佑介, 安藤裕一郎, 熊野 守, 上田公二, 佐道泰造, 宮尾正信, 鳴海一雅, 前田佳均 (電子情報通信学会 信学技報 SDM2007-230, pp.35-38 (2007年 11月))

  14. 強磁性体シリサイド/半導体積層構造の低温エピタキシャル成長−Si系スピントロノクスの創出を目指して−:佐道泰造,熊野守,安藤裕一郎,上田公二,権丈淳,宮尾正信(九州大学中央分析センター報告 第25号,pp.7-11 (2007年11月))

【2006年】

  1. Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge-condensation process combined with H+ irradiation and post-annealing:M. Miyao, M. Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, H. Hagino, M. Ninomiya and M. Nakama (Appl. Phys. Lett. Vol.88, No.14, 142105 (2006))

  2. Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si (111) Substrate : T. Sadoh, H. Takeuchi, K. Ueda, A. Kenjo, and M. Miyao (Jpn. J. Appl. Phys. Vol.45, No.4B, pp.3598-3600(Apr., 2006))

  3. Improved Oxidation-Induced Ge Condensation Technique by Using H+ Irradiation and Post-Annealing for Highly Stress-Relaxed Ultrathin SGOI : M. Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, M. Ninomiya, M. Nakamae and M. Miyao (Jpn. J. Appl. Phys. Vol.45, No.4B, pp.3598-3600(Apr., 2006))

  4. Recent Progress of SiGe Heterostructure Technologies for Novel Devices : M. Miyao, H. Kanno, and T. Sadoh (ECS Transactions Vol.2, No.1, pp.165-179 (May, 2006))

  5. Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2 : H. Kanno, A. Kenjo, T. Sadoh and M. Miyao (Thin Solid Films Vol.508, No.1-2, pp.40-43 (Jun.,2006))

  6. Au-induced Lateral Crystallization of a-Si1-xGex(x: 0-1) at low-temperature : T. Aoki, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao(Thin Solid Films Vol.508, No.1-2, pp.44-47 (Jun.,2006))

  7. Characterization of metal-induced lateral crystallization of amorphous SiGe on insulating film : M. Itakura, S. Masumori, T. Ohta, Y. Tomokiyo, N. Kuwano, H. Kanno, T. Sadoh and M. Miyao (Thin Solid Films Vol.508, No.1-2, pp.57-60 (Jun.,2006))

  8. Direct formation of strained Si on insulator by laser annealing: I. Tsunoda, R. Matsuura, M. Tanaka, H. Watakabe, T. Sameshima and M. Miyao (Thin Solid Films Vol.508, No.1-2, pp.96-98 (Jun.,2006))

  9. Morphological change of Co-nanodot on SiO2 by thermal treatment : K. Ueda, T. Sadoh, A. Kenjo, F. Shoji, H. Kurino, M. Koyanagi, and M. Miyao  (Thin Solid Films Vol.508, No.1-2, pp.178-181 (Jun., 2006))

  10. Thickness Dependent Stress-Relaxation in Thin SGOI Structures and Its Improvement : M. Tanaka, I. Tsunoda, T. Sadoh, T. Enokida, M. Ninomiya, M. Nakamae and M. Miyao (Thin Solid Films Vol.508, No.1-2, pp.247-250 (Jun.,2006))

  11. Electrical Properties for Poly-Ge Films Fabricated by Pulsed Laser Annealing : H. Watakabe, T. Sameshima, H. Kanno, and M. Miyao (Thin Solid Films Vol.508, No.1-2, pp.315-317 (Jun.,2006))

  12. Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2 : H. Kanno, A. Kenjo, T. Sadoh and M. Miyao (Jpn. J. Appl. Phys. Vol.45, No.5B, pp.4351-4354 (May, 2006))

  13. Suppression of Floating-Body Effects in Poly-Si TFT by Schottky S/D Structure : T. Sadoh, Y. Ohyama, A. Kenjo, K. Ikeda, Y. Yamashita, and M. Miyao (Jpn. J. Appl. Phys. Vol.45, No.5B, pp.4370-4373 (May, 2006))

  14. Magnetic properties of FePt nanodots fomed by a self-assembled nanodot deposition method : C. K. Yin, T. Fukushima, T. Tanaka, and M. Koyanagi, J. C. Bea and H. Choi, M. Nishijima, and M. Miyao (Appl. Phys. Lett. Vol.89, No.6, 063109, pp1-3 (Aug., 2006))

  15. Directional Growth of Si Nanowires on Insulating Films by Electric-Field-Assisted Metal-Induced Lateral Crystallization : H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao (Mat. Res. Soc. Symp. Proc Vol.891, EE06-08 pp.1-6 (Aug. 2006))

  16. Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrateH. Kanno, K. Toko, T. Sadoh, and M. Miyao (Appl. Phys. Lett. Vol.89, No.18, 182120, pp1-3 (Oct., 2006))

  17. Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on GeT. Sadoh, M. Kumano, R. Kizuka, K. Ueda, A. Kenjo, and M. Miyao (Appl. Phys. Lett. Vol.89, No.18, 182511, pp1-3 (Oct., 2006))

  18. Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drainT. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao (Appl. Phys. Lett. Vol.89, No.19, 192114, pp1-3 (Nov., 2006))

  19. 触媒金属を用いた非晶質SiGe薄膜/ガラスの低温固相成長:菅野裕士,権丈 淳,佐道泰造,宮尾正信(電子情報通信学会「信学技報」ED2006-2(2006 4月号))

  20. 水素照射型酸化濃縮法による歪緩和SiGe仮想基板の形成:田中政典,佐道泰造,松本光二,榎田豊次,宮尾正信(電子情報通信学会「信学技報」ED2006-6, pp.27-32(2006 4月号 ))

  21. 絶縁膜上における磁性金属ナノドットの形成:上田公二, 権丈 淳, 佐道泰造, 小柳光正, 宮尾正信(電子情報通信学会「信学技報」ED2006-18, pp.89-94(2006 4月号))

  22. Ni触媒誘起固相成長法を用いた次世代TFT用多結晶Si1-XGeX(0x1)薄膜の低温形成:菅野裕士,権丈 淳,佐道泰造,宮尾正信(電気学会論文誌C Vol.126 No.9 pp.1073-1078(2006 9月号)

  23. スピントロニクス用強磁性シリサイド(Fe3Si)/SiGeの低温形成:佐道泰造,上田公二,熊野 守,宮尾正信(電気材料研究会資料 EFM-06-17, pp.11-14(2006 10)

【2005年】

  1. Ge fraction dependent improved thermal stability of in-situ doped boron in polycrystalline Si1-XGeX (0≦X≦0.5) films on SiON : M. Miyao, I. Tsunoda, T. Sadoh, and A. Miyauchi1 (Journal Applied Physics Vol.97 No.5 pp.4909-4915(Mar., 2005))

  2. Low-Temperature Formation of Poly-Si1-xGex (x: 0-1) on SiO2 by Au-Mediated Lateral Crystallization : H. Kanno, T. Aoki, A. Kenjo, T. Sadoh and M. Miyao (Jpn. J. Appl. Phys., Vol.44, No.4B, pp.2405-2408 (Apl., 2005))

  3. Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator : T. Sadoh, R. Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, and M. Miyao (Jap. J. Appl. Phys.,Vol.44, No.4B, pp.2357-2360 (Apl., 2005))

  4. Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field : H. Kanno, A. Kenjo, and M. Miyao (Journal of Crystal Growth Vol. 279, No. 1-2, pp. 1-4 (May, 2005))

  5. Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+ -implantation-assisted oxidation : T. Sadoh, R. Matsuura, and M. Miyao (Applied Physics Letters, Vol.86, No.21, pp.901-3(May, 2005))

  6. Recent Progress in Low-Temperature Growth of SiGe/SiO2 for Future TFT (invited): M. Miyao, H. Kanno, and T. Sadoh (Proc. of 1st Int. TFT Conference, Seoul,March 14-15, 2005, pp.32-35, (Mar.,2005))

  7. Si基板上におけるFe3Si薄膜のエピタキシャル成長と評価:佐道泰造, 竹内 悠,権丈 淳, 宮尾正信(電子情報通信学会「信学技報」第2005-13巻 pp.23-26 (2005年4月号))

  8. 高速LSI用ひずみSiウエハー技術:中前正彦,王 冬,浅野種正,宮尾正信(「応用物理」第 74 巻 第 9 号( 2005 年 9 月号))

【2004年】

  1. Ge-dependent Morphological Change in Poly-SiGe Formed by Ni-mediated Crystallization: T.Sadoh, H.Kanno, A.Kenjo, and M.Miyao (Applied Surface Science 224, Vol.1-4, pp.227-230 (Mar., 2004))

  2. Enhanced Crystal nucleation in a-SiGe/SiO2 by Ion-irradiation Assisted Annealing : I.Tsunoda, A.Kenjo, T.Sadoh, and M.Miyao (Applied Surface Science 224, Vol.1-4, pp.231-234 (Mar., 2004))

  3. Enhancement of metal-induced crystallization in SiGe/Ge/Ni/SiO2 layered structure : H.Kanno, A.Kenjo, T.Sadoh and M.Miyao (Thin Solid Films, Vol.451-452C, pp.324-327 (Mar., 2004))

  4. Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-Insertion : I.Tsunoda, K.Nagatomo, T.Sadoh, A.Kenjo, and M.Miyao (Thin Solid Films, Vol.451-452C, pp.489-492 (Mar., 2004))

  5. Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure : H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao (Jpn. J. Appl. Phys., Vol.43, No.4B, pp.1852-1855 (Apr., 2004))

  6. Formation of β-FeSi2-x Gex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure : T. Sadoh, M.Owatari, Y. Murakami, A. Kenjo, T. Yoshitake, M. Itakura, and M. Miyao (Jpn. J. Appl. Phys., Vol.43, No.4B, pp.1879-1881 (Apr., 2004))

  7. Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion : I.Tsunoda, K.Nagatomo, A.Kenjo, T.Sadoh, S.Yamaguchi, and M.Miyao (Jpn. J. Appl. Phys., Vol.43, No.4B, pp.1901-1904 (Apr., 2004))

  8. Electrical and Structual Properties of Poly-SiGe Film Formed by Pulsed-Laser Annealing : H. Watakabe, T. Sameshima, H. Kanno, T. Sadoh, and M. Miyao (J. Appl. Phys., Vol.95, No.11, pp.6457-6461 (Jun., 2004))

  9. Positon Control of Nucleation in Solid-Phase Crystallization of a-Si/SiO2 by Ge Layer Insertion : T.Sadoh, K.Nagatomo, I.Tsunoda, A.Kenjo and M.Miyao (MRS Symp. Proc. Vol. 796, 39-43 (May, 2004))

  10. Strain Modulation of β-FeSi2 by Ge-Segregation in Solid-Phase Growth of [a-Si/a- FeSiGe]n Multi-Layer : Y. Murakami, A. Kenjo, T. Sadoh, T. Yoshitake, M. Itakura and M. Miyao (MRS Symp. Proc. Vol. 796, 57-62 (May, 2004))

  11. Solid-Phase Crystallization of β-FeSi2 Thin Film in Fe/Si Structure : Y. Murakami, A.Kenjo, T. Sadoh, T. Yoshitake, and M. Miyao (Thin Solid Films Vol.461, pp.68-71 (May., 2004))

  12. Fomation of SiGe/β-FeSi2Si Superstructures from amorphous Si/FeSiGe Layers : T.Sadoh, M. Owatari, Y. Murakami, A. Kenjo, T. Yoshitake, M.I takura, T. Enokida, and M. Miyao (Thin Solid Films Vol.461, pp.77-80 (May., 2004))

  13. Impurity Conduction in Ion Beam Synthesized β-FeSi2/Si : Y.Murakami, Y.Tsukahara, A.Kenjo, T. Sadoh, Y. Maeda and M. Miyao (Thin Solid Films Vol.461, pp.198-201 (May., 2004))

  14. Lattice Strain Engineering of β-FeSi2 by Ge Doping : T. Sadoh, Y. Murakami, A. Kenjo, T. Yoshitake, M. Itakura, T. Enokida, and M. Miyao, (AWAD2004, A9.2, Nagasaki, Japan,(Jun.30-Jul.2,2004))

  15. Development of Strained Silicon Wafer for Next Generation ULSI : H. Nakashima, M. Nakamae, M. Miyao, H. Okushi, T. Asano, and H. Hagino (AWAD 2004, A3.1, Nagasaki , Japan , (Jun. 30- Jul. 2,2004))M. Itakura, T. Enokida, and M. Miyao, (AWAD2004, A9.2, Nagasaki, Japan,(Jun.30-Jul.2,2004))

  16. Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure : H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao, (Appl. Phys. Lett., Vol.85, No.6, pp.899-901 (Aug., 2004))

  17. Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping : T. Sadoh, K. Nagatomo, A. Kenjo and M. Miyao , (Thin Solid Films Vol.464-465, pp.99-102 (Jul., 2004))

  18. Strain in β-FeSi2 modulation by Ge segregation in solid-phase growth of [a-Si/a- FeSiGe]n stacked structure : T. Sadoh, Y. Murakami, A. Kenjo, T. Enokida, T. Yoshitake, M. Itakura and M. Miyao (Applied Surface Science, Vol. 237, pp146-149 (Jul., 20004))

  19. 400oC Formation of Poly-SiGe on SiO2 by Au-Induced Lateral Crystallization : Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, and Masanobu Miyao( Materials Science in Semiconductor Processing, 8, (2005), pp.79-82 (Oct.,2004))

  20. Ge-Enhanced MILC Velocity in a-Ge/a-Si/SiO2 Layered Structure : H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao ( Materials Science in Semiconductor Processing, 8, (2005), pp.83-88 (Oct.,2004))

  21. H+ Implantation-Enhanced Stress-Relaxation in c-Si1-xGex on SiO2 during Oxidation -Induced Ge Condensation Process : T. Sadoh, R. Matsuura, M. Ninomiya, M. Nakamae , T. Enokida, H. Hagino, and M. Miyao ( Materials Science in Semiconductor Processing, 8, (2005), pp.167-170 (Oct.,2004))

  22. 絶縁膜上におけるSiGe結晶成長とデバイス応用:宮尾正信, 角田功, 菅野裕士, 長友圭, 佐道泰造, 権丈淳 (日本結晶成長学会誌,第31巻,第1号,pp23-28(平成16年4月))

  23. シリサイド半導体の高品質形成と歪み制御:佐道泰造,村上裕二,吉武剛,板倉創,榎田豊次,宮尾正信(電子情報通信学会 信学技法,第2004-13巻,pp.37-40(平成16年4月))

  24. 非晶質基板上におけるSiGe 薄膜の低温成長:宮尾正信,角田功,菅野裕士,佐道泰造,権丈淳(応用物理学会Siテクノロジー分科会,62号,pp.28-33(平成16年6月))


【2003年】

  1. Ion-Beam Irradiation Effect on Solid-Phase Growth ofβ-FeSi2 : Y. Murakami, H. Kido, A. Kenjo, T. Sadoh, T. Yoshitake, and M. Miyao (Physica E Vol.16/3-4,pp.505-508 (March, 2003))

  2. Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≦x≦1) on SiO2 : Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, and Masanobu Miyao (Appl. Phys. Lett. ,Vol.82, No.13, pp.2148-2150 (March, 2003))

  3. Enhancement of Bulk Nucleation in a-Si1-xGex on SiO2 for Low-Temperature Solid-Phase Crystallization : T. Sadoh, I. Tsunoda, T. Nagata, A. Kenjo, and M. Miyao (Thin Solid Films, Vol. 427/1-2, pp.96-100 (April 2003))

  4. Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam : T.Sadoh, H.Eguchi, A.Kenjo, and M.Miyao (Jpn. J. Appl. Phys. Part 1, Vol. 42, No.4B, pp.1855-1858(April 2003))

  5. Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator : H.Kanno, I.Tsunoda, A.Kenjo, T.Sadoh, S.Yamaguchi, and M.Miyao (Jpn. J. Appl. Phys. Part 1, Vol. 42, No.4B, pp.1933-1936(April 2003))

  6. Enhanced solid-phase growth of b-FeSi2 by pre-amorphization : Y. Murakami, I. Tsunoda, H. Kido, A. Kenjo, T. Sadoh, and M. Miyao (Nucl. Instrum. & Methods B,Vol.206C, pp.304-307 (May 2003))

  7. Etching characteristics of SiO2 irradiated with focused ion beam : T. Sadoh, H. Eguchi, A. Kenjo, and M. Miyao (Nucl. Instrum. & Methods B,Vol.206C,pp.478-481 (May 2003))

  8. 500℃ Formation of Poly-Si1-xGex (x 0.5) on SiO2 by Ion-beam Stimulated Solid Phase Crystallization : I.Tsunoda, H.Kanno, A.Kenjo, T.Sadoh, and M.Miyao (Mat. Res. Soc. Symp. Proc.,Vol.744,pp.501-506 (May 2003))

  9. Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films : M.Miyao, H.Kanno, I.Tsunoda, T.Sadoh and A.Kenjo (Mat. Res. Soc. Symp. Proc. ,Vol.744,pp.55-60 (May 2003))

  10. Low-temperature Formation of Poly-SiGe on SiO2 by Ion-Beam Stimulated Solid-Phase Crystallization : I.Tsunoda, A.Kenjo, T.Sadoh and M.Miyao (Digest of Technical Papers AM-LCD,pp.29(Jul., 2003))

  11. Low-temperature Formation of Poly-SiGe on Insulator by Metal-Induced Lateral Crystallization : H.Kanno, T.Sadoh, A.Kenjo, and M.Miyao (Digest of Technical Papers AM-LCD,pp.133(Jul., 2003))

  12. Electrical Properties of Laser Crystallized Sillicon-Germanium Films : H.Watakabe, T.Sameshima, H.Kanno, T.Sadoh, and M.Miyao (Digest of Technical Papers AM-LCD,pp.121(Jul, 2003))

  13. Relaxation Process of Ion Irradiation Defects in IV-Semiconductors : Y. Murakami, M. Miyata, A. Kenjo, T. Sadoh, M. Miyao (Materials Science & Engineering B, Vol.102/1-3, pp.362-365 (Aug., 2003))

  14. Solid-Phase Growth of β-FeSi2 on Si Substrates with Different Crystal Orientations : Y.Murakami, Y.Yoshikado, A.Kenjo, T.Yoshitake, and T.Sadoh (Reserch Reports on Information Science and Electrical Engineering of Kyushu University, Vol.8, No.2, September, 2003)

  15. [非晶質Si/非晶質FeSiGe]n積層構造の固相成長による歪変調β-FeSi2(Ge)の形成:村上裕二,尾渡正和,吉武剛,板倉賢,佐道泰造(九州大学大学院システム情報科学紀要,第8巻,第2号,pp189-191(平成15年9月))


【2002年】

  1. Thermal stability of B in poly-SiGe on SiON : T. Sadoh, Fitrianto, M. Kunigami, A. Kenjo, A. Miyauchi, H. Inoue, and M. Miyao (Materials Science and Engineering B89,pp.129-132 (Jan., 2002))

  2. Low-temperature solid-phase crystallization of a-Si1-XGeX ON SiO2 by ion-beam stimulation : I. Tsunoda, T. Nagata, A. Kenjo, T. Sadoh, and M. Miyao (Materials Science and Engineering B89,pp.336-340 (Jan., 2002)

  3. Mechanism of Improved Thermal stability of B in poly-SiGe Gate on SiON : T. Sadoh, Fitrianto, A. Kenjo, A. Miyauchi, H. Inoue, and M. Miyao (Jpn. J. Appl. Phys. Part 1, Vol. 41, No.4B ,pp.2468-2471 (April 2002))


【2001年】

  1. Ion-beam Stimulated Solid-phase Crystallization of Amorphous Si on SiO2 : M. Miyao, I. Tsunoda, T. Sadoh, and A. Kenjo (Thin Solid Films 383, pp104-106 (Jan., 2001))

  2. Solid-phase crystallization of Si1-XGeX alloy layers : S.Yamaguchi, N.Sugii, K.Park, K.Nakagawa and M.Miyao (J. Appl. Phys. 89(4), pp2091-2095 (Feb., 2001))

  3. High-Performance MOS Tunneling Cathode with CoSi2 Gate Electrode : T. Sadoh, Y.-Q. Zhang, H. Yasunaga, A. Kenjo, T. Tsurushima, and M. Miyao (Jpn. J. Appl. Phys. Vol.40, Part 1, No.4B, pp.190-193 (April, 2001))

  4. Dose Rate Dependence of Ion-Induced-Damage in Si Evaluated by Spectroscopic Ellipsometry : Y. Murakami, H. Yamauchi, T. Sadoh, A. Kenjo, and M. Miyao (Solid State Phenomena Vol.78-79, pp.341-344 (May, 2001))

  5. Influence of Ion Beam Irradiation on Solid-Phase Regrowth of Amorphous Si on SiO2 : I. Tsunoda, T. Nagata, T. Sadoh, A. Kenjo, and M. Miyao (Solid State Phenomena Vol.78-79, pp.345-348 (May, 2001))

  6. 「産」と「学」から見た研究体制・人材育成 −新米教師の独り言−:宮尾 正信(ブレークスルー, No. 176 (2001年3月))

  7. 九州大学・ナノ集積テクノロジー研究室:宮尾 正信(真空ジャーナル, No. 78 (2001年9月))

【2000年】

  1. Optical investigations of solid-phase crystallization of Si1-x Gex : S. Yamaguchi, N. Sugii, K. Nakagawa, M. Miyao (Jpn. J. Appl. Phys. vol.39, no.4B, pp. 2054-2057 (April, 2000))

  2. Interface-controlled Si/SiGe-heterostructure growth and its device aoolication : N. Sugii, K. Nakagawa, S. Yamaguchi, and M. Miyao (J. Vac. Sci Technol. B 18(3), pp.17241727 (May/Jun, 2000))

  3. Low-temperature solid-phase-crystallization in Si 1-x Ge x/SiO2 : S. K. Park, S. Yamaguchi, N. Sugii, K. Nakagawa, and M. Miyao (Applied Surface Science 159-160, pp. 116-120 (Jun., 2000))

  4. Ge-induced enhancement of solid-phase crystallization of Si on SiO2 : S. Yamaguchi, K. Park, N. Sugii, K. Nakagawa, and M. Miyao (Thin Solid Films 369, pp.195-198 (Jul., 2000))

  5. Carrier activation process in As+ implanted relaxed Si1-x Gex alloys : T. Irisawa, T. Ueno, S. Yamaguchi, K. Nakagawa, M. Miyao, and Y. Shiraki (Thin Solid Films 369, pp.203-206 (Jul., 2000))

  6. Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulated-doped field effect transistor : N. Sugii, K. Nakagawa, S. Yamaguchi, S.K. Park, and M. Miyao (Thin Solid Films 369, pp.362-395 (Jul., 2000))

  7. Effects of ion irradiation on silicon oxidation in electron cyclotron resonance argon and oxygen plasma : S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa and H. Nakashima (J. Appl. Phys. 88(6), pp.1664-1669 (Aug., 2000))

  8. Effects of Ge on the nucleation and growth of Si1-XGeX : S.Yamaguchi, N.Sugii, K.Park, K.Nakagawa and M.Miyao (Mat. Res. Soc. Symp. Proc. Vol.580 @ 1999 Materials Research Society pp.153-158 (Dec., 2000))

  9. ECR plasma oxidation: Dependence on energy of argon ion : S. Matsuo, M. Yamamoto, T. Sadoh, T. Tsurushima, D. W. Gao, K. Furukawa, and H. Nakashima (Mat. Res. Soc. Symp. Proc. Vol.585 @ 1999 Materials Research Society pp.171-176 (Dec., 2000))

【1999年】

  1. Incorporation of N into Si/SiO2 Interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction : J. Ushio, T. Maruizumi, and M. Miyao (Appl. Phys. Lett. Vol.75, No.5, pp.680-682 (Aug., 1999))

  2. Calculation of Hopping-Conduction Energy of Holes in SiO2 based on Molecular Orbital Theory : Y. Takemura, J. Ushio, T. Maruizumi, K. Kubota, and M. Miyao (Materials Science in Semiconductor Processing Vol.2, pp.233-238 (Sept., 1999))

  3. Study of Si1-xGex /Si/Si1-xGex Heterostructures with Abrupt Interfaces for Ultrahigh Mobility FETs : N. Sugii, K. Nakagawa, S. Yamaguchi, and M. Miyao (Mat. Res. Soc. Symp. Proc. Vol.535, pp.269-274 (Oct., 1999))

  4. Role of Si1-xGex buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor : N. Sugii, K. Nakagawa, S. Yamaguchi, and Masanobu Miyao (Appl. Phys. Lett. Vol.75, No.19, pp.2948-2950 (Nov., 1999))

  5. Narrow CoSi2 line formation on SiO2 by Focused Ion Beam: A. Matsushita, T. Sadoh, and T Tsurushima (Proc. of XII International Conference on Ion Implantation Technology (IIT'98), Kyoto, Japan, June 22-26, 1998, pp.861-864 (Dec., 1999))

  6. Silicon Fine Structure Formation on Sapphire with Focused Ion Beam : D. Bai, Y. Zhang, A. Matsushita, A. Baba, A. Kenjo, T. Sadoh, H. Nakashima, H. Mori, and T. Tsurushima (Proc. of XII International Conference on Ion Implantation Technology (IIT'98), Kyoto, Japan, June 22-26, 1998, pp.1101-1104 (Dec., 1999))

 研究会・解説論文

【2005年】

  1. Ge導入によるβ-FeSi2のバンドギャップ変調:佐道 泰造(第8回シリサイド系半導体研究会・夏の学校、徳島市文化センター、2005年9月12日)

  2. 絶縁膜上における金属ナノ粒子の高密度形成:宮尾 正信, 佐道 泰造,小柳 光正(超高速・超省電力高性能ナノデバイス・システムの創製)領域シンポジウム、東京ガーデンパレス、2005年10月18日)

  3. Si基板上における強磁性薄膜(Fe3Si)の室温エピタキシャル成長:宮尾 正信・ 佐道 泰造 ・ 小柳 光正(超高速・超省電力高性能ナノデバイス・システムの創製)領域シンポジウム、東京ガーデンパレス、2005年10月18日)

【2004年】

  1. 非晶質基板上におけるSiGe薄膜の低温成長:宮尾正信,角田功,菅野裕士,佐道泰造,権丈淳(応用物理学会 Siテクノロジー分科会,No.62,JSAP:AP042224,pp28-33, 東京,2004年6月26日)

  2. シリコン中の遷移金属とその複合欠陥:佐道 泰造(2004年シリサイド系半導体・第8回夏の学校、琵琶湖コンファレンスセンター、2003年7月24-25日)

  3. 絶縁膜上におけるSiGe結晶成長とデバイス応用:宮尾正信、角田功、菅野裕士、長友圭、佐道泰造、権丈淳(日本結晶成長学会誌「W族系半導体結晶・混晶の新たなる展開」、第1巻、第1号、pp.23-28、2004年4月)

  4. シリサイド半導体の高品質形成と歪み制御:佐道泰造, 村上裕二, 吉武剛, 板倉創, 榎田豊次, 宮尾正信 (電子情報通信学会 信学技法, 第2004-13巻, pp37-40(平成16年4月))

【2003年】

  1. Formation of Strained β-FeSi2/(Ge) by Ge-Segregation Controlled Solid-Phase Growth of [Amorphous Si/FeSiGe]n Multi-Layered Structure : T.Sadoh, M.Owatari, Y.Murakami, A.Kenjo, T.Yoshitake, M.Itakura, and M.Miyao (Ext. Abst. 2003 International Conf. on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sept. 19, 2003, pp512-513 (Sep. 2003))

  2. Nucleation-Control in Solid-Phase-Crystallization of a-Si/SiO2 by Local Ge Insertion : I.Tsunoda, K.Ngatomo, A.Kenjo, T.Sadoh, S.Yamaguchi, and M.Miyao (Ext. Abst. 2003 International Conf. on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sep. 19, 2003, pp506-507 (Sept. 2003))

  3. Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si Layered Structure by Precursor Modulation : H.Kanno, A.Kenjo, T.Sadoh, and M.Miyao (Ext. Abst. 2003 International Conf. on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sep. 19, 2003, pp294-295 (Sep. 2003))

  4. 絶縁膜上におけるSiGe薄膜の低温形成と次世代ディスプレー:宮尾正信、角田功、菅野裕士、長友圭、佐道泰造、権丈淳(電子情報通信学会技報、ED2003-6、SDM2003-6、OME2003-6(2003-4)、pp.29-34(2003))

  5. [a-Si/a-FeSiGe]n積層構造におけるGe析出を用いたβ-FeSi2(Ge)の歪み制御 : 村上裕二、尾渡正和、権丈淳、佐道泰造、吉武剛、板倉賢、宮尾正信(2003年シリサイド系半導体・第7回夏の学校、関西セミナーハウス、2003年8月2-3日)

  6. 絶縁膜上におけるSiGe結晶成長とデバイス応用:宮尾正信、角田功、菅野裕士、長友圭、佐道泰造、権丈淳(日本結晶成長学会誌「W族系半導体結晶・混晶の新たなる展開」、Vol.31,No.1
    2003年 11月)

【2002年】

  1. Dose Dependent Etching Selectivity in SiO2 by Focused Ion Beam : T. Sadoh, H. Eguchi, A. Kenjo, and M. Miyao (Ext. Abst. 2002 International Conf. on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sept. 18, 2002, pp.722-723 (Sept., 2002))

  2. Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator : H. Kanno, I. Tsunoda, A. Kenjo, T. Sadoh, S. Yamaguchi, and M. Miyao (Ext. Abst. 2002 International Conf. on Solid State Devices and Materials (SSDM), Nagoya, Japan, Sept. 18, 2002, pp.766-767 (Sept., 2002))

  3. ボンド変調によるa-Si/SiO2の低温固相成長:佐道泰造、 角田功、 長友圭、 権丈淳、 宮尾正信、電子情報通信学会技報 (ED2002-5) Vol.102, No.4, pp.23-27 (2002-4)

  4. シリコン系ヘテロ超構造技術の進展とそのデバイス応用:宮尾正信(2002年シリサイド系半導体・夏の学校、東海村、2002年8月5-6日)(招待)

  5. Ge添加によるβ-FeSi2固相成長層の歪み制御:佐道泰造、尾渡正和、村上裕二、権丈淳、由利彰崇、吉武剛、宮尾正信(2002年シリサイド系半導体・夏の学校、東海村、2002年8月5-6日)

  6. アモルファスライク鉄シリサイド半導体の水素化:吉武剛、由利彰崇、永山邦仁、前田佳均、佐道泰造、宮尾正信(2002年シリサイド系半導体・夏の学校、東海村、2002年8月5-6日)

  7. イオン線照射によるβ-FeSi2固相成長の促進:村上裕二、権丈淳、佐道泰造、吉武剛、宮尾正信(2002年シリサイド系半導体・夏の学校、東海村、2002年8月5-6日)

  8. 対向ターゲット式CDスパッタリング法によるアモルファスライクFeSi2薄膜の作製とその基本特性:由利彰崇、吉武剛、永山邦仁、佐道泰造、宮尾正信(2002年シリサイド系半導体・夏の学校、東海村、2002年8月5-6日)

  9. SiGe固相成長による原子層レベル急峻へテロ界面の形成:山口伸也、杉井信之、朴成基、中川清和、宮尾正信(表面科学Vol.23、No.9、pp.586-592、2002)

【2001年】

  1. Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON: T. Sadoh, Fitrianto, A. Kenjo, A. Miyauchi, H. Inoue, and M. Miyao (Ext. Abst. 2001 International Conf. on Solid State Devices  and Materials (SSDM), Tokyo, Japan, Sept. 28, 2001, pp.482-483 (Sept., 2001))

  2. β-FeSi2固相成長における基板面方位、膜厚及びGe添加の影響:佐道泰造、城戸英男、尾渡正和、村上裕二、権丈淳、 由利彰崇、花田利文、吉武剛、宮尾正信(第1回シリサイド系半導体研究会)講演予稿集,pp.21-24 (2001-11))

  3. Low temperature solid-phase crystallization of a-Si1-XGeX for future TFT : M. Miyao, T. Sadoh, S. Yamaguchi, and S. K. Park 、電子情報通信学会技術研究報告 (ED2001-71) vol.101, no.161,pp.1-5, 2001 (2001-7).(招待)

【2000年】

  1. High Performance MOS Tunneling Cathode with CoSi2 Gate Electrode : T. Sadoh, Y. Zhang, H. Yasunaga, A. Kenjo, T. Tsurushima, and M. Miyao (Ext. Abst. 2000 International Conf. on Solid State Devices and Materials (SSDM), Sendai, Japan, Aug. 29, 2000, pp.102-103 (Aug., 2000))

  2. Ion Irradiated Stimulated Crystal Nucleation in Amorphous Si on SiO2 : M.. Miyao, I. Tsunoda, T. Sadoh, and A. Kenjo (Ext. Abst. 2000 International Conf. on Solid State Devices and Materials (SSDM), Sendai, Japan, Aug. 31, 2000, pp.442-443 (Aug., 2000))

  3. シリコン系ヘテロ構造とそのデバイス応用:宮尾正信(シリコンスクール in 金沢予稿集,pp.48-67 (2000-1))

  4. SiGe/Siヘテロ構造における固相成長: 山口伸也、中川清和、杉井信之、朴成基、宮尾正信(シリコンテクノロジー No.18, pp.13-17 (2000-7))

  5. シリコン系ヘテロ超構造技術の進歩と夢: 宮尾正信(静岡大学電子工学研究所 平成12年度公開講演会(第2回高柳健次郎記念シンポジウム)論文集, pp.91-110 (2000-12))

【1999年】

  1. ECRプラズマ支援Si酸化とイオン照射効果: 松尾 慎一郎, 佐道 泰造, 中島 寛, 鶴島 稔夫(電子情報通信学会技報 ED99-23, pp.87-94 (1999-4))



九州大学 大学院システム情報科学研究院
情報エレクトロニクス部門 電子デバイス工学講座(佐道研究室)

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