The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
Technical Program

Remark: The presenter of each paper is marked with "*".

Technical Program: One Page (Not Separated) version

Author Index: HERE

Session Schedule

Sunday, June 2, 2013


Reception for ICSI-8/ISCSI-VI 17:00 - 19:00

Monday, June 3, 2013


A1 Opening & Keynote Session for ICSI-8 8:50 - 10:15
Break 10:15 - 10:30
A2 Quantum Computing & Spintronics 10:30 - 12:10
Lunch Break 12:10 - 13:20
A3 Optoelectronic Devices and Material Processing 13:20 - 15:20
Break 15:20 - 15:40
A4 S/D Technology for Strained MOSFETs 15:40 - 17:10
Short Break 17:10 - 17:20
P1 Poster Session I 17:20 - 19:20

Tuesday, June 4, 2013


A5 SiGe/Ge Epitaxy I 9:00 - 10:30
Break 10:30 - 10:50
A6 SiGe/Ge Epitaxy II 10:50 - 12:10
Lunch Break 12:10 - 13:20
AS1 Epitaxial Growth of GeSn 13:20 - 15:10
Break 15:10 - 15:30
AS2 Characterization of GeSn 15:30 - 17:40
Short Break 17:40 - 17:50
P2 Poster Session II 17:50 - 19:50

Wednesday, June 5, 2013


A7 Hetero-Exitaxy on Si 9:00 - 10:30
Break 10:30 - 10:50
A8 Nano-Analyses & Microstructures 10:50 - 12:00
Lunch Break 12:00 - 13:00
B1 Keynote Session for ISCSI-VI 13:00 - 14:40
Break 14:40 - 14:55
AB1 SiGe/Ge MOSFET 14:55 - 16:35
Break 16:35 - 16:50
AB2 Channel Formation & Nano Devices 16:50 - 18:20
Short Break 18:20 - 18:30
Banquet 18:30 - 20:30

Thursday, June 6, 2013


AB3 Process Technologies 9:00 - 11:00	C1 Core-to-Core 1 9:10 - 11:15
Break 11:00 - 11:15
B2 Next-Generation Materials 11:15 - 12:45	C2 Core-to-Core 2 11:45 - 12:45
Lunch Break 12:45 - 13:45
B3 Schottky & Gate Oxide 13:45 - 15:15	C3 Core-to-Core 3 14:15 - 15:15
Break 15:15 - 15:30
B4 GaN Related Technologies 15:30 - 17:10	C4 Core-to-Core 4 15:30 - 16:55
AB4 Closing Session 17:10 - 17:20

Session AB1 to AB3 and P2 are joint sessions between ICSI-8 and ISCSI-VI.
Session AS1 and AS2 are joint oral sessions between ICSI-8 and the 3rd GeSn Workshop: GeSn developments and future applications.

Session A1 to A8 and P1 are oral and poster sessions for ICSI-8, respectively, and session B1 to B4 are oral sessions for ISCSI-VI.

Session C1 to C4 is the sessions for a satellite workshop planned by JSPS Core-to-Core Program "International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration".

List of Papers

Remark: The presenter of each paper is marked with "*".

Session A1 Opening & Keynote Session for ICSI-8
Time: 8:50 - 10:15 Monday, June 3, 2013
Chairs: H. Nakashima (Kyushu Univ., Japan), S. Miyazaki (Nagoya Univ., Japan)

A1-1 (Time: 8:50 - 9:00)

Title	Opening Address
Author	M. Miyao (Kyusyu Univ., Japan)

A1-2 (Time: 9:00 - 9:45)

Title	(Keynote Address) Spintronics of Ge/Si Nanostructures
Author	*Kang L. Wang, Jianshi Tang (Univ. of California, Los Angeles, U.S.A.)
Page	pp. 1 - 2

A1-3 (Time: 9:45 - 10:15)

Title	(Invited Paper) SiGe Spintronics with High-Quality Ferromagnetic Metal-Semiconductor Heterostructures
Author	*Kohei Hamaya, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 3 - 4

Session A2 Quantum Computing & Spintronics
Time: 10:30 - 12:10 Monday, June 3, 2013
Chairs: K. Hamaya (Kyushu Univ., Japan), M.A. Eriksson (Univ. of Wisconsin-Madison, U.S.A.)

A2-1 (Time: 10:30 - 11:00)

Title	(Invited Paper) Qubit Measurement and Manipulation in Si/SiGe Quantum Dots
Author	*Mark A. Eriksson, X. Wu, J. R. Prance, Zhan Shi, C. B. Simmons, D. R. Ward, R. T. Mohr, Teck Seng Koh, John King Gamble (Univ. of Wisconsin-Madison, U.S.A.), L. R. Schreiber, L. M. K. Vandersypen (Kavli Institute of Nanoscience, TU Delft, Netherlands), R. Joynt, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmtih (Univ. of Wisconsin-Madison, U.S.A.)
Page	pp. 5 - 6

A2-2 (Time: 11:00 - 11:30)

Title	(Invited Paper) Phosphorous Donor Qubits in Silicon
Author	*Michelle Y. Simmons (Univ. of New South Wales, Australia)
Page	pp. 7 - 8

A2-3 (Time: 11:30 - 11:50)

Title	Ge:Mn Materials for Spin Injection into Group-IV Semiconductors: Overview and Perspectives
Author	*Vinh Le Thanh, Minh Tuan Dau (Aix-Marseille Univ., France), Aurelie Spiesser (AIST, Japan), Thi Giang Le (Univ. of Hong Duc, Viet Nam), Lisa Michez, Matthieu Petit (Aix-Marseille Univ., France)
Page	pp. 9 - 10

A2-4 (Time: 11:50 - 12:10)

Title	Electrical Spin Creation in n-Type Ge using an Epitaxial Mn₅Ge₃ Schottky Contact
Author	*Aurelie Spiesser, Hidekazu Saito, Shinji Yuasa, Koji Ando (AIST, Japan)
Page	pp. 11 - 12

Session A3 Optoelectronic Devices and Material Processing
Time: 13:20 - 15:20 Monday, June 3, 2013
Chairs: G. Capellini (IHP GmbH, Germany), R. Camacho-Aguilera (MIT, U.S.A.)

A3-1 (Time: 13:20 - 13:50)

Title	(Invited Paper) Strained Ge Heterostructures for Infrared and THz Light Emission
Author	*Giovanni Capellini (Univ. degli Studi Roma Tre, Italy/IHP, Germany), M. De Seta (Univ. degli Studi Roma Tre, Italy), C. Reich, Y. Yamamoto, B. Tillack (IHP, Germany), M. El Kurdi, P. Boucaud (CNRS-Univ. Paris-Sud, France), M. Virgilio (Univ. di Pisa, Italy), M. Ortolani (Univ. di Roma La Sapienza, Italy), T. Schroeder (IHP, Germany)
Page	pp. 13 - 14

A3-2 (Time: 13:50 - 14:10)

Title	Effect of Heavy Doping and Strain on the Electroluminescence of Ge-on-Si LEDs
Author	*Marc Schmid, Michael Oehme, Martin Gollhofer, Roman Körner, Mathias Kaschel, Erich Kasper, Joerg Schulze (Univ. Stuttgart, Germany)
Page	pp. 15 - 16

A3-3 (Time: 14:10 - 14:30)

Title	Characterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Application
Author	*Katsunori Makihara, Hiroki Takami, Yoshihiro Suzuki (Nagoya Univ., Japan), Mitsuhisa Ikeda (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 17 - 18

A3-4 (Time: 14:30 - 14:50)

Title	Microdisk Enhanced Photodetector Based on Ge Self-Assembled Quantum Dots on SOI
Author	*Xuejun Xu, Taichi Chiba, Takuya Maruizumi, Yasuhiro Shiraki (Tokyo City Univ., Japan)
Page	pp. 19 - 20

A3-5 (Time: 14:50 - 15:20)

Title	(Invited Paper) CMOS Ge LASER: a Bridge to the Optical Network
Author	*Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, Jurgen Michel (Massachusetts Inst. of Tech., U.S.A.)
Page	pp. 21 - 22

Session A4 S/D Technology for Strained MOSFETs
Time: 15:40 - 17:10 Monday, June 3, 2013
Chairs: A. Sakai (Osaka Univ., Japan), S. Takagi (The Univ. of Tokyo, Japan)

A4-1 (Time: 15:40 - 16:10)

Title	(Invited Paper) Epitaxial Growth Challenges for Advanced CMOS Devices
Author	*Roger Loo, Andriy Hikavyy, Benjamin Vincent, Liesbeth Witters, Geert Eneman, Jerome Mitard, Erik Rosseel (imec, Belgium), Sathish Kumar Dhayalan (imec/KU Leuven, Belgium), Vladimir Machkaoutsan, Harald B. Profijt (ASM, Belgium), Rita Rooyackers, Anne Vandooren (imec, Belgium), Wilfried Vandervorst (imec/KU Leuven, Belgium), Aaron Thean, Matty Caymax (imec, Belgium)
Page	pp. 23 - 24

A4-2 (Time: 16:10 - 16:30)

Title	Record High Mobility of 2 × 10⁶ cm²/V in Strained Si
Author	*S.-H. Huang (National Taiwan Univ., Taiwan), T. -M. Lu (Princeton Univ., U.S.A.), C. -H. Lee, S. -C. Lu, C. W. Liu (National Taiwan Univ., Taiwan), D. C. Tsui (Princeton Univ., U.S.A.)
Page	pp. 25 - 26

A4-3 (Time: 16:30 - 16:50)

Title	Application of Selective Epitaxial Growth for Merging Fins in Source/Drain Areas of sub 20 nm FinFET Transistors
Author	*Andriy Hikavyy, Soon Aik Chew, Guillaume Boccardi, Paola Favia, Roger Loo (IMEC, Belgium)
Page	pp. 27 - 28

A4-4 (Time: 16:50 - 17:10)

Title	Reduction of Contact Resistance on Selectively Grown Phosphorus-Doped n⁺-Ge Layers
Author	*Yoshihiko Moriyama (AIST/Osaka Univ., Japan), Yuuichi Kamimuta, Yoshiki Kamata, Keiji Ikeda (AIST, Japan), Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ., Japan), Tsutomu Tezuka (AIST, Japan)
Page	pp. 29 - 30

Tuesday, June 4, 2013

Session A5 SiGe/Ge Epitaxy I
Time: 9:00 - 10:30 Tuesday, June 4, 2013
Chairs: J. Zhang (Univ. of New South Wales, Australia), J.-M. Hartmann (CEA-LETI, France)

A5-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) Site-Controlled SiGe Islands on Patterned Si(001): Morphology, Composition Profiles, and Devices
Author	*Jianjun Zhang (IFW Dresden, Germany/Univ. Linz, Austria/Univ. of New South Wales, Australia), Armando Rastelli (IFW Dresden, Germany/Univ. Linz, Austria), Nina Hrauda (Univ. Linz, Austria), Georgios Katsaros (IFW Dresden, Germany/Univ. Linz, Austria), Heiko Groiss, Julian Stangl, Friedrich Schäffler (Univ. Linz, Austria), Oliver G. Schmidt (IFW Dresden, Germany), Günther Bauer (Univ. Linz, Austria)
Page	pp. 31 - 32

A5-2 (Time: 9:30 - 9:50)

Title	Chemical Vapor Deposition Processes for the Fabrication of Epitaxial Si-O Superlattices
Author	*Annelies Delabie, Suseendran Jayachandran, Matty Caymax, Roger Loo, Jens Maggen, Johan Meersschaut, Haraprasanna Lenka, Wilfried Vandervorst, Marc Heyns (IMEC, Belgium)
Page	pp. 33 - 34

A5-3 (Time: 9:50 - 10:10)

Title	Epitaxial Ge/Metallic Silicide Grown on Si with Atomically Smooth Heterointerfaces
Author	*Shinya Yamada, Makoto Kawano, Kohei Tanikawa (Kyushu Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Masanobu Miyao, Kohei Hamaya (Kyushu Univ., Japan)
Page	pp. 35 - 36

A5-4 (Time: 10:10 - 10:30)

Title	Introducing Batch Epitaxy into High Volume Production for SiGe Channel Deposition
Author	*Carsten Reichel, Joerg Schoenekess, Andreas Dietel (GLOBALFOUNDRIES Dresden, Germany)
Page	pp. 37 - 38

Session A6 SiGe/Ge Epitaxy II
Time: 10:50 - 12:10 Tuesday, June 4, 2013
Chairs: Wei-Xin Ni (Linköping Univ., Sweden), A. Delabie (IMEC, Belgium)

A6-1 (Time: 10:50 - 11:10)

Title	Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization
Author	*Taizoh Sadoh, Masashi Kurosawa, Kaoru Toko, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 39 - 40

A6-2 (Time: 11:10 - 11:30)

Title	Exploring the Potentiality of Disilane for the Very Low Temperature Epitaxy of SiGe
Author	*Jean-Michel Hartmann, Veronique Benevent, Marc Veilllerot (CEA-LETI, Minatec Campus, Grenoble, France), Aomar Halimaoui (STMicroelectronics, Crolles, France)
Page	pp. 41 - 42

A6-3 (Time: 11:30 - 11:50)

Title	Dynamics Analysis of Rapid-Melting Growth using SiGe on Insulator
Author	*Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 43 - 44

A6-4 (Time: 11:50 - 12:10)

Title	Influence of Growth Temperature on Strain Relaxation of Thin Ge Films on Si(001) Grown by Carbon-Mediated Epitaxy
Author	*Dominic Tetzlaff, Tobias F. Wietler, Eberhard Bugiel, H. Jörg Osten (Leibniz Univ. Hannover, Germany)
Page	pp. 45 - 46

Session AS1 Epitaxial Growth of GeSn
Time: 13:20 - 15:10 Tuesday, June 4, 2013
Chairs: S. Zaima (Nagoya Univ., Japan), J. Kouvetakis (Arizona State Univ., U.S.A.)

AS1-1 (Time: 13:20 - 13:50)

Title	(Invited Paper) Synthesis and Properties of Si-Ge-Sn Materials and Devices Grown by CVD
Author	*John Kouvetakis (Arizona State Univ., U.S.A.)
Page	pp. 47 - 48

AS1-2 (Time: 13:50 - 14:10)

Title	Epitaxial Growth of Strained and Unstrained GeSn Alloys up to 20 % Sn
Author	*Michael Oehme, Konrad Kostecki, Marc Schmid, Erich Kasper, Jörg Schulze (Univ. Stuttgart, Germany)
Page	pp. 49 - 50

AS1-3 (Time: 14:10 - 14:30)

Title	Composition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition
Author	*Wei Wang, Yosuke Shimura (IMEC, Belgium), Thomas Nieddu (Univ. of Liege, Belgium), Federica Gencarelli, Benjamin Vincent (IMEC, Belgium), Ngoc Duy Nguyen (Univ. of Liege, Belgium), Wilfried Vandervorst, Roger Loo (IMEC, Belgium)
Page	pp. 51 - 52

AS1-4 (Time: 14:30 - 14:50)

Title	SiGeSn Growth Studies using Reduced Pressure CVD Towards Optoelectronic Applications
Author	*Stephan Wirths (Forschungszentrum Jülich GmbH, Peter Gruenberg Institute, Germany), Dan Buca (Forschungszentrum Jülich GmbH, Germany), Zoran Ikonic, Paul Harrison (Univ. of Leeds, U.K.), Andreas T. Tiedemann, Bernd Holländer, Gregor Mussler, Uwe Breuer, Detlev Grützmacher, Siegfried Mantl (Forschungszentrum Jülich GmbH, Germany)
Page	pp. 53 - 54

AS1-5 (Time: 14:50 - 15:10)

Title	Pulsed Laser Induced Epitaxy of Silicon Germanium Tin Alloys
Author	*Stefan Stefanov, Alessandro Benedetti, Jorge Carlos Conde (Univ. de Vigo, Spain), Jens Werner, Michael Oehme, Jörg Schulze (Institut für Halbleitertechnik (IHT), Germany), Stephan Wirths, Dan Mihai Buca (Forschungszentrum Jülich GmbH, Germany), Stefano Chiussi (Univ. de Vigo, Spain)
Page	pp. 55 - 56

Session AS2 Characterization of GeSn
Time: 15:30 - 17:40 Tuesday, June 4, 2013
Chairs: M.M. Frank (IBM, Japan), D. Buca (Forschungszentrum Jülich GmbH, Germany)

AS2-1 (Time: 15:30 - 16:00)

Title	(Invited Paper) Growth and Exploitation of Strained Ge/(Si)GeSn Heterostructures for Optical, Electrical and Thermoelectric Applications
Author	Stephan Wirths (Forschungszentrum Jülich GmbH, Germany), Stefan Stefanov (Univ. de Vigo, Spain), J.-H Fournier-Lupien (Ecole Polytechnique de Montreal, Canada), Zoran Ikonic (Univ. of Leeds, U.K.), Stefano Chiussi (Univ. of Vigo, Spain), Oussama Moutanabbir (Ecole Polytechnique de Montreal, Canada), A.T. Tiedemann, Patric Bernardy, Bernd Holländer, Gregor Mussler, Toma Stoica (Forschungszentrum Jülich GmbH, Germany), Jean-Michel Hartmann (CEA- LETI, France), Detlev Grützmacher, Siegfried Mantl, *Dan Buca (Forschungszentrum Jülich GmbH, Germany)
Page	pp. 57 - 58

AS2-2 (Time: 16:00 - 16:20)

Title	EXAFS Study of Sn Local Environment in Strained and Relaxed CVD Grown Epitaxial GeSn Films
Author	*Federica Gencarelli (IMEC, Belgium), Didier Grandjean (KU Leuven, Belgium), Yosuke Shimura, Benjamin Vincent (IMEC, Belgium), Andre' Vantomme (KU Leuven, Belgium), Wilfried Vandervorst, Roger Loo, Marc Heyns (IMEC, Belgium), Kristiaan Temst (KU Leuven, Belgium)
Page	pp. 59 - 60

AS2-3 (Time: 16:20 - 16:40)

Title	Incorporation of a Vacancy with an Sn Atom in Epitaxial Ge_1-xSn_x Film Growth at Lower Temperature
Author	*Eiji Kamiyama, Koji Sueoka (Okayama Prefectural Univ., Japan), Osamu Nakatsuka, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ., Japan), Koji Izunome, Kazuhiko Kashima (GlobalWafers Japan Corp. Ltd, Japan)
Page	pp. 61 - 62

AS2-4 (Time: 16:40 - 17:00)

Title	Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers
Author	*Somya Gupta (IMEC/KU Leuven, Belgium), Eddy Simoen (IMEC, Belgium), Takanori Asano, Osamu Nakatsuka (Nagoya Univ., Japan), Federica Gencarelli (IMEC/KU Leuven, Belgium), Yosuke Shimura (IMEC/FWO Pegasus Marie Curie Fellow/KU Leuven, Belgium), Alain Moussa, Roger Loo (IMEC, Belgium), Shigeaki Zaima (Nagoya Univ., Japan), Bruno Baert, Adam Dobri, Ngoc Duy Nguyen (Univ. of Liege, Belgium), Marc Heyns (IMEC/KU Leuven, Belgium)
Page	pp. 63 - 64

AS2-5 (Time: 17:00 - 17:20)

Title	Bandgap Measurement by Spectroscopic Ellipsometry for Strained Ge_1-xSn_x
Author	*Yosuke Shimura, Wei Wang (IMEC, Belgium), Thomas Nieddu (Univ. of Liege, Belgium), Federica Gencarelli, Benjamin Vincent (IMEC, Belgium), Priya Laha, Herman Terryn (Vrije Univ.it Brussel, Belgium), Stefan Stefanov, Stefano Chiussi (Univ. de Vigo, Spain), Joris Van Campenhout (IMEC, Belgium), Ngoc Duy Nguyen (Univ. of Liege, Belgium), André Vantomme (KU Leuven, Belgium), Roger Loo (IMEC, Belgium)
Page	pp. 65 - 66

AS2-6 (Time: 17:20 - 17:40)

Title	Formation and Characterization of Locally Strained Ge_1-xSn_x/Ge Microstructures
Author	*Shinichi Ike (Nagoya Univ., Japan), Yoshihiko Moriyama (AIST, Japan), Masashi Kurosawa, Noriyuki Taoka, Osamu Nakatsuka (Nagoya Univ., Japan), Yasuhiko Imai, Shigeru Kimura (Japan Synchrotron Radiation Research Institute, Japan), Tsutomu Tezuka (AIST, Japan), Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 67 - 68

Wednesday, June 5, 2013

Session A7 Hetero-Exitaxy on Si
Time: 9:00 - 10:30 Wednesday, June 5, 2013
Chairs: T. Ogino (Yokohama National Univ., Japan), H. von Känel (ETH-Zürich, Swaziland)

A7-1 (Time: 9:00 - 9:30)

Title	(Invited Paper) 3D Heteroepitaxy of Mismatched Semiconductors on Silicon
Author	Claudiu V. Falub, A.G. Taboada, T. Kreiliger (ETH Zürich, Switzerland), F. Isa, D. Chrastina, G. Isella (Politecnico di Milano, Italy), M. Meduňa (Masaryk Univ., Czech Republic), F. Pezzoli, R. Bergamaschini, A. Marzegalli, L. Miglio (Univ. di Milano-Bicocca, Italy), E. Müller (ETH-Zürich, Switzerland), A. Neels, P. Niedermann, A. Dommann (Swiss Center for Electronics & Microtechnology (CSEM), Switzerland), *H. von Känel (ETH-Zürich, Switzerland)
Page	pp. 69 - 70

A7-2 (Time: 9:30 - 9:50)

Title	Heteroepitaxial Growth of Ge on Compliant Strained Nanostructured Si Lines and Dots on (001) SOI Substrate
Author	*Peter Zaumseil, Yuji Yamamoto, Markus Andreas Schubert (IHP, Germany), Thomas Schroeder (IHP/Brandenburgische TU Cottbus, Germany), Bernd Tillack (IHP/TU Berlin, Germany)
Page	pp. 71 - 72

A7-3 (Time: 9:50 - 10:10)

Title	Formation of Ge(111) on Insulator by Ge Epitaxy on Si(111) and Layer Transfer
Author	*K. Sawano, Y. Hoshi, S. Endo, H. Katsumata, T. Nagashima (Tokyo City Univ., Japan), K. Arimoto, J. Yamanaka, K. Nakagawa (Univ. of Yamanashi, Japan), K. Hamaya, M. Miyao (Kyushu Univ., Japan), Y. Shiraki (Tokyo City Univ., Japan)
Page	pp. 73 - 74

A7-4 (Time: 10:10 - 10:30)

Title	Self-Assembled Si/Ge Quantum Dot Crystals: Growth Optimization towards Ultra High Densities
Author	*Svetlana Borisova, Jürgen Moers, Gregor Mussler, Detlev Grützmacher (Forschungszentrum Jülich GmbH, Germany)
Page	pp. 75 - 76

Session A8 Nano-Analyses & Microstructures
Time: 10:50 - 12:00 Wednesday, June 5, 2013
Chairs: A. Nikiforov (Rzhanov Institute of Semiconductor Physics SB RAS, Russian Federation), Y. Nagai (Tohoku Univ., Japan)

A8-1 (Time: 10:50 - 11:20)

Title	(Invited Paper) In-Depth 3D Elemental Analysis in Nano-Scale Transistor Structures by Atom Probe Tomography
Author	*Yasuyoshi Nagai, Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue, Fumiko Yano (Tohoku Univ., Japan)
Page	pp. 77 - 78

A8-2 (Time: 11:20 - 11:40)

Title	Application of Atom Probe Tomography to Epitaxial Layers
Author	*Arul Kumar (IMEC, IKS, KU Leuven, Belgium), Matthieu Gilbert (IMEC, Belgium), Ajay Kumar Kambham (IMEC, IKS, KU Leuven, Belgium), Federica Gencarelli, Loo Roger (IMEC, Belgium), Wilfried Vandervorst (IMEC, IKS, KU Leuven, Belgium)
Page	pp. 79 - 80

A8-3 (Time: 11:40 - 12:00)

Title	Tensile-Strained Germanium Microdisks
Author	*Moustafa El Kurdi, Abdel-Hamid Ghrib, Malo de Kersauson (Univ. of Paris-Sud, France), Mathias Prost (IEF CNRS - Univ. of Paris-Sud/STMicroelectronics, France), Sebastien Sauvage, Xavier Checoury (Univ. of Paris-Sud, France), Grégoire Beaudoin, Isabelle Sagnes (CNRS - UPR 20, France), Gerald Ndong, Marc Chaigneau, Razvigor Ossikovski (Ecole Polytechnique, France), Philippe Boucaud (Univ. of Paris-Sud, France)
Page	pp. 81 - 82

Session B1 Keynote Session for ISCSI-VI
Time: 13:00 - 14:40 Wednesday, June 5, 2013
Chairs: K. Washio (Tohoku Univ., Japan), T. Okumura (Tokyo Metropolitan Univ., Japan)

B1-1 (Time: 13:00 - 13:05)

Title	Opening Remark
Author	J. Murota (Tohoku Univ., Japan)

B1-2 (Time: 13:05 - 13:50)

Title	(Keynote Address) Interface Control in Power Semiconductor SiC Technology
Author	*Hiroyuki Matsunami (Kyoto Univ., Japan)
Page	pp. 83 - 84

B1-3 (Time: 13:50 - 14:20)

Title	(Invited Paper) p-Type Diamond Schottky Interfaces - Current Transport Mechanisms and Thermal Stability -
Author	*Tokuyuki Teraji (NIMS, Japan)
Page	pp. 85 - 88

B1-4 (Time: 14:20 - 14:40)

Title	Potential Profile and Photovoltaic Effect in Nanoscale Lateral pn Junction Observed by Kelvin Probe Force Microscopy
Author	*Roland Nowak, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ., Japan), Ryszard Jablonski (Warsaw Univ. of Tech., Poland), Michiharu Tabe (Shizuoka Univ., Japan)
Page	pp. 89 - 90

Session AB1 SiGe/Ge MOSFET
Time: 14:55 - 16:35 Wednesday, June 5, 2013
Chairs: K. Kobayashi (Tokai Univ., Japan), T. Tuchiya (Shimane Univ., Japan)

AB1-1 (Time: 14:55 - 15:25)

Title	(Invited Paper) SiGe Channel Gate Stack Scaling: Oxygen Scavenging and Full Metal Gates
Author	*Martin M. Frank, Takashi Ando, Eduard A. Cartier, John Bruley (IBM, U.S.A.), Lisa F. Edge (IBM Research, U.S.A.), Vijay Narayanan (IBM, U.S.A.)
Page	pp. 91 - 92

AB1-2 (Time: 15:25 - 15:55)

Title	(Invited Paper) High Channel Mobility Ge nMOSFET with Good Source-Drain Ohmic Contact and Small EOT
Author	*Albert Chin (National Chiao Tung Univ., Taiwan)
Page	pp. 93 - 94

AB1-3 (Time: 15:55 - 16:15)

Title	Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact
Author	*Keisuke Yamamoto, Takahiro Sada, Haigui Yang, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan)
Page	pp. 95 - 96

AB1-4 (Time: 16:15 - 16:35)

Title	Atomic Layer Doping of Ge and Strained GeOI at High Carrier Densities
Author	*Wolfgang Matthias Klesse, Giordano Scappucci (Univ. of New South Wales, Australia), Giovanni Capellini (Univ. degli Studi Roma Tre, Italy), Jean-Michel Hartmann (CEA, LETI, France), Michelle Yvonne Simmons (Univ. of New South Wales, Australia)
Page	pp. 97 - 98

Session AB2 Channel Formation & Nano Devices
Time: 16:50 - 18:20 Wednesday, June 5, 2013
Chairs: A. Chin (National Chiao Tung Univ., Taiwan), N. Koshida (Tokyo Univ. of Agri. and Tech., Japan)

AB2-1 (Time: 16:50 - 17:10)

Title	Reduced-Pressure Chemical Vapor Deposition of Boron-Doped Ge Layers
Author	*Yann Bogumilowicz, Jean-Michel Hartmann (CEA, France)
Page	pp. 99 - 100

AB2-2 (Time: 17:10 - 17:30)

Title	Formation of High Mobility Channel III-V and Ge Layer onto 300 mm Si Wafers utilizing Pattern Epitaxial Lift-Off Technique
Author	*Eiko Mieda, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Yuichi Kurashima, Atsuhiko Maeda, Hideki Takagi (AIST, Japan), Takeshi Aoki, Taketsugu Yamamoto, Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical Co., Ltd., Japan), Arito Ogawa, Toshiyuki Kikuchi, Yasuo Kunii (Hitachi Kokusai Electric Inc., Japan)
Page	pp. 101 - 102

AB2-3 (Time: 17:30 - 17:50)

Title	Ultra High Hole Mobilities in a Pure Strained Ge Quantum Well
Author	*Oleg Mironov, Amna Hassan (Univ. of Warwick, U.K.), S. Kiatgamolchai (Chulalongkorn Univ., Thailand), M. Uhlarz (Dresden High Magnetic Field Laboratory (HLD), Germany), A. Dobbie, R.J.H. Morris (Univ. of Warwick, U.K.), E. Cizmar, A. Feher (P.J. Safarik Univ., Slovakia), S. Gabani (Institute of Experimental Physics SAS, Slovakia), V Shah, M Myronov, D.R. Leadley (Univ. of Warwick, U.K.)
Page	pp. 103 - 104

AB2-4 (Time: 17:50 - 18:20)

Title	(Invited Paper) Ballistic Electron Emission from Nanostructured Si Diode and Its Applications
Author	*Nobuyoshi Koshida, N. Ikegami, A. Kojima, R Mentek (Tokyo Univ. of Agri. and Tech., Japan), B. Gelloz (Nagoya Univ., Japan), N. Mori (Osaka Univ., Japan)
Page	pp. 105 - 106

Thursday, June 6, 2013

Session AB3 Process Technologies
Time: 9:00 - 11:00 Thursday, June 6, 2013
Chairs: Y. Kunii (Hitachi Kokusai Electric Inc., Japan), O. Nakatsuka (Nagoya Univ., Japan)

AB3-1 (Time: 9:00 - 9:20)

Title	Top-Down Approach to Controllably Induce Ultra High Strain in Si and Ge
Author	*Renato Amaral Minamisawa (Paul Scherrer Institut, Switzerland), Martin J Süess (ETHZ, Switzerland), Richard Geiger (Paul Scherrer Institut, Switzerland), Ralph Spolenak, Jerome Faist (ETHZ, Switzerland), Christian David, Jens Gobrecht (Paul Scherrer Institut, Switzerland), Jacopo Frigerio, Daniel Chrastina, Giovanni Isella (Politecnico di Milano, Italy), Konstantin K. Bourdelle (SOITEC, France), Hans Sigg (Paul Scherrer Institut, Switzerland)
Page	pp. 107 - 108

AB3-2 (Time: 9:20 - 9:40)

Title	Formation of (Si:CP) Layer through In-Situ Doping and Implant Process for nMOS Devices
Author	*Shogo Mochizuki (IBM Research, Japan), Zhengmao Zhu, Rainer Loesing, Anthony Domenicucci, Philip Flaitz, Vamsi Paruchuri (IBM, U.S.A.)
Page	pp. 109 - 110

AB3-3 (Time: 9:40 - 10:00)

Title	HCl Defect Revelation in SiGe Virtual Substrates: a Systematic Study
Author	*Jean-Michel Hartmann (CEA-LETI, France), Alexandra Abbadie (SOITEC, France)
Page	pp. 111 - 112

AB3-4 (Time: 10:00 - 10:20)

Title	Phosphorus Atomic Layer Doping in SiGe using RPCVD
Author	*Yuji Yamamoto, Bernd Heinemann (IHP, Germany), Junichi Murota (Tohoku Univ., Japan), Bernd Tillack (IHP and TU Berlin, Germany)
Page	pp. 113 - 114

AB3-5 (Time: 10:20 - 10:40)

Title	Characterization of Interface Properties of Au/Al₂O₃/GeO_x/Ge MOS Structures
Author	*Ju-Chin Lin, Rui Zhang (Univ. of Tokyo, Japan), Noriyuki Taoka (Nagoya Univ., Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 115 - 116

AB3-6 (Time: 10:40 - 11:00)

Title	Influence of Ge Substrate Orientation on Crystalline Structures of Ge_1-xSn_x Epitaxial Layers
Author	*Takanori Asano, Shohei Kidowaki (Nagoya Univ., Japan), Masashi Kurosawa (Research Fellow of the Japan Society for the Promotion of Science/Nagoya Univ., Japan), Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 117 - 118

Session B2 Next-Generation Materials
Time: 11:15 - 12:45 Thursday, June 6, 2013
Chairs: A. Toriumi (The Univ. of Tokyo, Japan), K. Sato (JSTA, Japan)

B2-1 (Time: 11:15 - 11:45)

Title	(Invited Paper) Materials and Processes for Next-Generation Innovative Devices
Author	*Katsuaki Sato (Japan Science and Technology Agency, Japan)
Page	pp. 119 - 120

B2-2 (Time: 11:45 - 12:05)

Title	Growth Promotion of Al-Induced Crystallized Ge Thin-Films on Insulators by Enhancing Ge-Supply into Al Layers
Author	*Kaoru Toko, Ryohei Numata, Koki Nakazawa (Univ. of Tsukuba, Japan), Noritaka Usami (Tohoku Univ., Japan), Takashi Suemasu (Univ. of Tsukuba, Japan)
Page	pp. 121 - 122

B2-3 (Time: 12:05 - 12:25)

Title	Formation of Tetragonal ZrO₂ Thin Film by ALD Method
Author	*Kimihiko Kato, Takatoshi Saito, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 123 - 124

B2-4 (Time: 12:25 - 12:45)

Title	Silicon-Germanium-Tin Microstructures Obtained through Mask Projection Assisted Pulsed Laser Induced Epitaxy
Author	*Stefan Stefanov, Carmen Serra, Alessandro Benedetti, Jorge Carlos Conde (Univ. de Vigo, Spain), Jens Werner, Michael Oehme, Jörg Schulze (Institut für Halbleitertechnik (IHT), Germany), Stephan Wirths, Dan Mihai Buca (Forschungszentrum Jülich GmbH, Germany), Stefano Chiussi (Univ. de Vigo, Spain)
Page	pp. 125 - 126

Session B3 Schottky & Gate Oxide
Time: 13:45 - 15:15 Thursday, June 6, 2013
Chairs: R. T. Tung (City Univ. of New York, U.S.A.), T. Ito (Osaka Univ., Japan)

B3-1 (Time: 13:45 - 14:15)

Title	(Invited Paper) Schottky Barrier Height Adjustment through Interface Structure Engineering
Author	*Raymond T. Tung (Brooklyn College/City Univ. of New York, U.S.A.)
Page	pp. 127 - 128

B3-2 (Time: 14:15 - 14:35)

Title	HfO₂-assisted SiO₂ Reduction in HfO₂/SiO₂/Si Stacks
Author	*Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 129 - 130

B3-3 (Time: 14:35 - 14:55)

Title	Impact of Oxidation Pressure on the Band Alignment at GeO₂/GeProbed by Internal Photoemission Spectroscopy
Author	*W.F. Zhang, Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo/JST, CREST, Japan)
Page	pp. 131 - 132

B3-4 (Time: 14:55 - 15:15)

Title	Impacts of AlGeO Formation by Post Thermal Oxidation of Al₂O₃/Ge Structure on Interface Properties
Author	*Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 133 - 134

Session B4 GaN Related Technologies
Time: 15:30 - 17:10 Thursday, June 6, 2013
Chairs: T. Hashizume (Hokkaido Univ., Japan), K. Shiojima (Univ. of Fukui, Japan)

B4-1 (Time: 15:30 - 16:00)

Title	(Invited Paper) Interface Control of GaN-Based Heterostrcutures for Power Switching Transistors
Author	*Tamotsu Hashizume (Hokkaido Univ./JST-CREST, Japan), Yujin Hori, Taketomo Sato (Hokkaido Univ., Japan)
Page	pp. 135 - 138

B4-2 (Time: 16:00 - 16:30)

Title	(Invited Paper) DLTS Studies of Point Defects in MOCVD n-GaN
Author	*Yutaka Tokuda (Aichi Inst. of Tech., Japan)
Page	pp. 139 - 141

B4-3 (Time: 16:30 - 16:50)

Title	AC Operation of Low-Mg-Doped p-GaN Schottky Diodes
Author	*Toshichika Aoki (Univ. of Fukui, Japan), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable Ltd., Japan), Kenji Shiojima (Univ. of Fukui, Japan)
Page	pp. 143 - 144

B4-4 (Time: 16:50 - 17:10)

Title	Totally Wet Process Based on Photoelectrochemical Techniques for GaN Schottky Contacts
Author	*Koki Kitazawa, Akihiro Koyama, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ., Japan)
Page	pp. 145 - 146

Session AB4 Closing Session
Time: 17:10 - 17:20 Thursday, June 6, 2013
Chair: H. Nakashima (Kyushu Univ., Japan)

AB4-1 (Time: 17:10 - 17:20)

Title	Closing Remarks
Author	J. Murota (Tohoku Univ., Japan)

Monday, June 3, 2013

Session P1 Poster Session I
Time: 17:20 - 19:20 Monday, June 3, 2013
Chair: K. Makihara (Nagoya Univ., Japan)

P1-1 (Growth, Characterization and Modeling of Si and Group IV)

Title	Surfactant-Mediated Epitaxy of Silicon-Germanium Films on Silicon (001) Substrates
Author	*Tobias F. Wietler, Jan Schmidt, Dominic Tetzlaff, Eberhard Bugiel (Leibniz Univ. Hannover, Germany)
Page	pp. 147 - 148

P1-2 (Growth, Characterization and Modeling of Si and Group IV)

Title	Single-Crystalline SiGe Stripes on Insulating Substrate by Segregation-Free Rapid-Melting-Growth
Author	*Ryo Matsumura, Ryusuke Kato, Yuki Tojo, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 149 - 150

P1-3 (Growth, Characterization and Modeling of Si and Group IV)

Title	Ge-Diffusion-Controlled Gold-Induced Crystallization of (100)- or (111)-Oriented Ge for Flexible Electronics
Author	*Jong-Hyeok Park (Kyushu Univ., JSPS Research Fellow, Japan), Tsuneharu Suzuki, Akira Ooato, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ., Japan)
Page	pp. 151 - 152

P1-4 (Growth, Characterization and Modeling of Si and Group IV)

Title	Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH₄-B₂H₆-H₂ Gas Mixture without Substrate Heating
Author	Yusuke Abe, *Masao Sakuraba, Junichi Murota (Tohoku Univ., Japan)
Page	pp. 153 - 154

P1-5 (Growth, Characterization and Modeling of Si and Group IV)

Title	Effects of PDA Ambient on Leakage Current in Poly-Ge TFTs
Author	*Shoichi Kabuyanagi, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST, CREST, Japan)
Page	pp. 155 - 156

P1-6 (Growth, Characterization and Modeling of Si and Group IV)

Title	Explosive Crystallization of Amorphous Germanium Films Induced by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation
Author	*Takahiro Kamikura, Shohei Hayashi, Seiji Morisaki, Yuji Fujita, Muneki Akazawa, Seiichiro Higashi (Hiroshima Univ., Japan)
Page	pp. 157 - 158

P1-7 (Growth, Characterization and Modeling of Si and Group IV)

Title	Surface Modulation of Epitaxial Ge Layer in a Narrow Trench Array
Author	*Byongju Kim, Hyunchul Jang, Sun-Wook Kim, Sangmo Koo, Dae-Hong Ko (Yonsei Univ., Republic of Korea)
Page	pp. 159 - 160

P1-8 (Growth, Characterization and Modeling of Si and Group IV)

Title	Epitaxial Growth of Si_1-xGe_x Alloy on Si(100) by ECR Ar Plasma CVD in a SiH₄-GeH₄ Gas Mixture without Substrate Heating
Author	*Naofumi Ueno, Masao Sakuraba, Junichi Murota, Shigeo Sato (Tohoku Univ., Japan)
Page	pp. 161 - 162

P1-9 (Growth, Characterization and Modeling of Si and Group IV)

Title	Structural Transition of Ge Growth on Si Induced by Submonolayer Carbon
Author	*Yuhki Itoh, Shinji Hatakeyama, Takuya Matsuo, Katsuyoshi Washio (Tohoku Univ., Japan)
Page	pp. 163 - 164

P1-10 (Growth, Characterization and Modeling of Si and Group IV)

Title	Study of Interface Trap Density in a GeSn MOS Structure by Numerical Simulation of the Electrical Characteristics
Author	*Bruno Baert (Univ. of Liege, Belgium), Somya Gupta (MTM Department, KU Leuven and IMEC, Belgium), Marcel Schmeits (Univ. of Liege, Belgium), Eddy Simoen (IMEC, Belgium), Ngoc Duy Nguyen (Univ. of Liege, Belgium)
Page	pp. 165 - 166

P1-11 (Growth, Characterization and Modeling of Si and Group IV)

Title	Effect of Boron Dopant of Si (001) Substrates on Growth of Ge Layers using Sputter Epitaxy Method
Author	*Takahiro Tsukamoto (Tokyo Univ. of Agri. and Tech., Japan), Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT, Japan), Yoshiyuki Suda (Tokyo Univ. of Agri. and Tech., Japan)
Page	pp. 167 - 168

P1-12 (Growth, Characterization and Modeling of Si and Group IV)

Title	Enhanced Au Induced Lateral Crystallization in Electron-Irradiated Amorphous Ge on SiO₂
Author	*Shin Sakiyama, Takahiro Kaneko, Takanobu Ootsubo, Takatsugu Sakai, Kazutoshi Nakashima, Kenta Moto, Masashi Yoneoka, Kenichiro Takakura, Isao Tsunoda (Kumamoto National College of Tech., Japan)
Page	pp. 169 - 170

P1-13 (Growth, Characterization and Modeling of Si and Group IV)

Title	Surface Blistering of Germanium Co-Implanted with H and He Ions: Effects of Implantation Order
Author	Jiayun Dai, *Zengfeng Di, Miao Zhang (Chinese Academy of Sciences, China)
Page	pp. 171 - 172

P1-14 (Growth, Characterization and Modeling of Si and Group IV)

Title	Large-Grained Oriented Polycrystalline Si/Al/SiO₂ Structures Formed by Al-Induced Layer Exchange Process
Author	*Ryohei Numata, Kaoru Toko (Univ. of Tsukuba, Japan), Noriyuki Saitoh, Noriko Yoshizawa (AIST, Japan), Noritaka Usami (Tohoku Univ., Japan), Takashi Suemasu (Univ. of Tsukuba, Japan)
Page	pp. 173 - 174

P1-15 (Process Technologies for Group IV based Heterostructure)

Title	3-Dimensionally-Graded SiGe-on-Insulator Stacked Structures by Successive Rapid-Melting Growth
Author	Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, *Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 175 - 176

P1-16 (Process Technologies for Group IV based Heterostructure)

Title	SiGe/Si Superlattice-Quantum-Dot Arrays Fabricated by using Nanosphere Lithography
Author	Hung-Tai Chang, Bo-Lun Wu, Shao-Liang Cheng, *Sheng-Wei Lee (National Central Univ., Taiwan)
Page	pp. 177 - 178

P1-17 (Process Technologies for Group IV based Heterostructure)

Title	N-type Doping of BaSi₂ Epitaxial Films by Phosphorus Ion Implantation and Thermal Annealing
Author	*Kosuke O. Hara (Nagoya Univ./JST, CREST, Japan), Yusuke Hoshi (Nagoya Univ., Japan), Noritaka Usami (Nagoya Univ./JST, CREST, Japan), Yasuhiro Shiraki (Tokyo City Univ., Japan), Kotaro Nakamura, Kaoru Toko (Univ. of Tsukuba, Japan), Takashi Suemasu (Univ. of Tsukuba/JST, CREST, Japan)
Page	pp. 179 - 180

P1-18 (Process Technologies for Group IV based Heterostructure)

Title	Crystalline Structures and Electrical Property of Epitaxial Ni Germanide Layers Formed on Ge(110) Substrate
Author	*Yunsheng Deng, Jun Yokoi, Osamu Nakatsuka, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 181 - 182

P1-19 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Relationship between Stress Distribution and Hot-Carrier Effect for Strained nMOSFETs
Author	*H.W. Hsu, H. S. Huang, S. Y. Chen (National Taipei Univ. of Tech., Taiwan), M. C. Wang (Minghsin Univ. of Science and Tech., Taiwan), K.C. Li (National Taipei Univ. of Tech., Taiwan), K. C. Lin (Ming Chuan Univ., Taiwan), C. H. Liu (National Taiwan Normal Univ., Taiwan)
Page	pp. 183 - 184

P1-20 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Radiation Tolerance of Si_1-yC_y Source/Drain n-MOSFETs with Different Carbon Concentrations
Author	*Toshiyuki Nakashima (Univ. of Miyazaki/Chuo Denshi Kogyo Co. Ltd., Japan), Yuki Asai, Masato Hori, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura (Kumamoto National College of Tech., Japan), Mireia Bargallo Gonzalez (Institut de Microelectronica de Barcelona, Spain), Eddy Simoen (IMEC, Belgium), Cor Claeys (IMEC/KU Leuven, Belgium), Kenji Yoshino (Univ. of Miyazaki, Japan)
Page	pp. 185 - 186

P1-21 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Extended Poly Gate Effect on the Performance of Strained PMOSFETs with a Narrow Channel Width
Author	Chang-Chun Lee (Chung Yuan Christian Univ., Taiwan), Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan), Hung-Wen Hsu (National Taipei Univ. of Tech., Taiwan), Min-Hui Hung (National Taiwan Normal Univ., Taiwan), *Yin-Hao Lin (Chung Yuan Christian Univ., Taiwan)
Page	pp. 187 - 188

P1-22 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Analysis of Geometric Effects on Channel Stress Due to the Strained CESL and Spacer in MOSFET
Author	*Ming-Jenq Twu (National Taiwan Normal Univ., Taiwan), Kuei-Chih Lin (Ming Chuan Univ., Taiwan), Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan)
Page	pp. 189 - 190

P1-23 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Strain Evolution in the Channel Region Induced by the Embedded Source and Drain with Graded Epitaxial Si_1-xGe_x Layers
Author	*Sangmo Koo, Sun-Wook Kim, Hyunchul Jang, Dae-Hong Ko (Yonsei Univ., Republic of Korea)
Page	pp. 191 - 192

P1-24 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Fabrication and Characteristic of Ultra-thin Strained SOI by He Implantation and Ion Cut Technique
Author	Zhiqiang Mu, Zhongying Xue, Da Chen, *Miao Zhang, Zengfeng Di, Xi Wang (Chinese Academy of Sciences, China)
Page	pp. 193 - 194

P1-25 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Advanced Germanium Based CMOS with Strain Elements for pMOS and nMOS
Author	*Matthias Bauer (ASM America Inc., U.S.A.)
Page	pp. 195 - 196

P1-26 (Electronic Properties and Device Applications)

Title	Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-Junctions for Low Power Applications
Author	*Minsoo Kim, Younghyun Kim, Masafumi Yokoyama, Ryosho Nakane, SangHyeon Kim, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 197 - 198

P1-27 (Electronic Properties and Device Applications)

Title	Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_1-xGe_x/Si Resonant Tunneling Diode
Author	*Tomoyuki Kawashima, Masao Sakuraba, Junichi Murota (Tohoku Univ., Japan)
Page	pp. 199 - 200

P1-28 (Electronic Properties and Device Applications)

Title	In-Depth Analysis of High-Quality Ge-on-Insulator Structure Formed by Rapid-Melting Growth
Author	*Hironori Chikita, Ryo Matsumura, Yuki Tojo, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 201 - 202

P1-29 (Electronic Properties and Device Applications)

Title	Laterally-Graded P-Doping in GOI Structure by Ion-Implantation and Rapid-Melting-Growth
Author	*Ryo Matsumura, Mohammad Anisuzzaman, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 203 - 204

P1-30 (Electronic Properties and Device Applications)

Title	The Influence of SiO₂ Interfacial Layer Thickness on NBTI Degradation Mechanism of p Channel HfO₂/AlN Gate MOSFETs
Author	*Hanim Hussin (Univ. Teknologi MARA/Univ. of Malaya, Malaysia), Yasmin Abdul Wahab (Univ. of Malaya, Malaysia), Sharifah Shafini Syed Shahabuddin (Univ. of Malaya/Silterra (M) Sdn. Bhd., Malaysia), Norhayati Soin (Univ. of Malaya, Malaysia), Muhamad Faiz Bukhori (Univ. Kebangsaan Malaysia, Malaysia)
Page	pp. 205 - 206

P1-31 (Optical Properties and Device Applications)

Title	Characterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dots
Author	*Takahisa Yamada, Katsunori Makihara, Hiroki Takami, Yoshihisa Suzuki (Nagoya Univ., Japan), Mitsuhisa Ikeda (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 207 - 208

P1-32 (Optical Properties and Device Applications)

Title	Highly N-doped, Tensile-strained Ge Grown on Si by Molecular Beam Epitaxy
Author	*Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki (Tokyo City Univ., Japan)
Page	pp. 209 - 210

P1-33 (Optical Properties and Device Applications)

Title	Carrier Extraction from Ge Quantum Dots in Si Solar Cells
Author	*Takeshi Tayagaki (Kyoto Univ./PRESTO-JST, Japan), Yusuke Hoshi (Tohoku Univ., Japan), Kazufumi Ooi (Kyoto Univ., Japan), Takanori Kiguchi, Noritaka Usami (Tohoku Univ., Japan)
Page	pp. 211 - 212

P1-34 (Optical Properties and Device Applications)

Title	Evaluation of Propagation Loss of Si/SiGe/Si Photonic-Wire Waveguides for Si Based Optical Modulator
Author	*Younghyun Kim (Univ. of Tokyo, Japan), Takenori Osada, Masahiko Hata (Sumitomo Chemical Co. Ltd., Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 213 - 214

P1-35 (Optical Properties and Device Applications)

Title	Control of geometry in Si-Based Photonic Nanostructures Formed by Maskless Wet Etching Process and Its Impact on Optical Properties
Author	*Yusuke Hoshi, Takanori Kiguchi (Tohoku Univ., Japan), Kazufumi Ooi, Takeshi Tayagaki (Kyoto Univ., Japan), Noritaka Usami (Tohoku Univ., Japan)
Page	pp. 215 - 216

P1-36 (Optical Properties and Device Applications)

Title	Surface Plasmon Enhanced Light Emission from Silicon Nanocrystals
Author	*Anis Boudraa (Tokyo Inst. of Tech., Japan), Ayse Seyhan (Tokyo Inst. of Tech./Nigde Univ., Turkey), Yoshifumi Nakamine, Yoshihiro Ogawa, Fujiro Minami, Yukio Kawano, Shunri Oda (Tokyo Inst. of Tech., Japan)
Page	pp. 217 - 218

P1-37 (Optical Properties and Device Applications)

Title	Improvement of Photoluminescence from Ge Layer with Patterned Si₃N₄ Stressors
Author	*Katsuya Oda (PETRA, PECST, Hitachi, Japan), Tadashi Okumura (Hitachi, Japan), Kazuki Tani, Shin-ichi Saito, Tatemi Ido (PETRA, PECST, Hitachi, Japan)
Page	pp. 219 - 220

P1-38 (Germanium Based Semiconductors)

Title	Junctionless GeSn pMOSFETs on Si (111) by Solid Phase Epitaxy
Author	*Tatsuro Maeda, Wipakorn Jevasuwan, Hiroyuki Hattori, Noriyuki Uchida (AIST, Japan), Jean-Pierre Locquet (KU Leuven, Belgium), Ruben Lieten (KU Leuven, IMEC, Belgium)
Page	pp. 221 - 222

P1-39 (Germanium Based Semiconductors)

Title	Lateral Growth Enhancement of Poly-Ge_1-xSn_x on SiO₂ using a Eutectic Reaction
Author	*Masashi Kurosawa (Nagoya Univ., JSPS, Japan), Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka (Nagoya Univ., Japan), Masanobu Miyao (Kyushu Univ., Japan), Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 223 - 224

P1-40 (Germanium Based Semiconductors)

Title	Ion Implantation-Induced Defects Generated in PN Junction Formation of Germanium
Author	*Choong Hyun Lee, Tomonori Nishimura, Toshiyuki Tabata, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 225 - 226

P1-41 (Germanium Based Semiconductors)

Title	Melting-Induced-Mixing in a-Ge/Sn/c-Ge Structures for Sn-Doped Ge Films
Author	*Yuki Kinoshita, Yuki Tojo, Ryo Matsumura, Taizoh Sadoh (Kyushu Univ., Japan), Tomoaki Nishimura (Hosei Univ., Japan), Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 227 - 228

P1-42 (Germanium Based Semiconductors)

Title	Tensile-Strained and n-Doped Ge Epilayers Grown on Si(001) by Molecular-Beam Epitaxy
Author	*Kim Phuong Luong, Minh Tuan Dau (Aix-Marseille Univ., France), Abdelhamid Ghrib (Univ. of Paris-Sud, France), Mohammad Zrir, Matthieu Petit, Vinh Le Thanh (Aix-Marseille Univ., France), Moustafa El Kurdi, Philippe Boucaud (Univ. of Paris-Sud, France), Junichi Murota (Tohoku Univ., Japan)
Page	pp. 229 - 230

P1-43 (Germanium Based Semiconductors)

Title	Low-Temperature Formation of SiGe Crystals by Partial-Melting Method in a-GeSn/Si(100) Structure
Author	*Hironori Chikita, Ryo Matsumura, Yuki Tojo, Yuki Kinoshita, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 231 - 232

P1-44 (Germanium Based Semiconductors)

Title	Low-Temperature Formation (~150^oC) of Ge on Insulator through Layer-Exchange of Ge/Sn Stacked-Structures
Author	*Akira Ooato, Tsuneharu Suzuki (Kyushu Univ., Japan), Jong-Hyeok Park (Kyushu Univ./JSPS Research Fellow, Japan), Masanobu Miyao, Taizoh Sadoh (Kyushu Univ., Japan)
Page	pp. 233 - 234

P1-45 (Germanium Based Semiconductors)

Title	Study of Ge Loss during Ge Condensation Process
Author	*Z.Y. Xue, Z.F. Di (Chinese Academy of Sciences, China), L. Ye (Lanzhou Univ., China), Z.Q. Mu (Chinese Academy of Sciences, China), D. Chen (Lanzhou Univ., China), X. Wei, M. Zhang, X. Wang (Chinese Academy of Sciences, China)
Page	pp. 235 - 236

P1-46 (Germanium Based Semiconductors)

Title	Mechanical Property Effects of Si_1-xGe_x Channel and Stressed CESL on Nano-Scaled nMOSFETs
Author	C. C. Lee (Chung Yuan Christian Univ., Taiwan), C. H. Liu (National Taiwan Normal Univ., Taiwan), H. W. Hsu (National Taipei Univ. of Tech., Taiwan), Z. H. Chen, H. H. Teng (National Taiwan Normal Univ., Taiwan), *Y. J. Lai (Chung Yuan Christian Univ., Taiwan)
Page	pp. 237 - 238

P1-47 (Germanium Based Semiconductors)

Title	Impact of Channel Width and Length on Mobility Enhancement of Strained Ge NMOSFET with SiGe Alloy Stressors
Author	*C.-F. Lee, R.-Y He, S. T. Chang (National Chung Hsing Univ., Taiwan)
Page	pp. 239 - 240

P1-48 (Si(Ge)-based materials growth and device fabrication for spintronics)

Title	Stability and Schottky Barrier of Spin-polarized Fe₃Si/Ge Interfaces; First-Principles Study
Author	*Kyosuke Kobinata, Takashi Nakayama (Chiba Univ., Japan)
Page	pp. 241 - 242

P1-49 (Si(Ge)-based materials growth and device fabrication for spintronics)

Title	Magnetic Tunnel Junctions with an L2₁-Co₂FeSi Electrode on Si Fabricated by Room-Temperature Molecular Beam Epitaxy
Author	*Yuichi Fujita, Shinya Yamada, Yuya Maeda, Masanobu Miyao, Kohei Hamaya (Kyushu Univ., Japan)
Page	pp. 243 - 244

P1-50 (Si(Ge)-based materials growth and device fabrication for spintronics)

Title	Improvement of Co₂FeSi_0.5Al_0.5/Si Heterointerfaces for Spin Injectors in Silicon Spintronics
Author	*Kohei Tanikawa, Soichiro Oki, Shinya Yamada, Makoto Kawano, Masanobu Miyao, Kohei Hamaya (Kyushu Univ., Japan)
Page	pp. 245 - 246

Tuesday, June 4, 2013

Session P2 Poster Session II
Time: 17:50 - 19:50 Tuesday, June 4, 2013
Chair: S. Takeuchi (Osaka Univ., Japan)

P2-1 (Formation and Characterization of Group IV based Nanostructures)

Title	Towards Controllable Growth of SiGe Single and Double Quantum Dot Nanostructures
Author	*Y. J. Ma, F. S. Huang (Fudan Univ., China), C. Zeng (Huazhong Univ. of Science and Tech., China), T. Zhou, Z. Zhong, Y. L. Fan, X. J. Yang (Fudan Univ., China), J. S. Xia (Huazhong Univ. of Science and Tech., China), Z. M. Jiang (Fudan Univ., China)
Page	pp. 247 - 248

P2-2 (Formation and Characterization of Group IV based Nanostructures)

Title	Optical Properties of Coupled Three-Dimensional Ge Quantum Dot Crystals
Author	*Yingjie Ma, Zhenyang Zhong, Quan Lv (Fudan Univ., China), Xingjun Wang (Chinese Academy of Sciences, China), Tong Zhou, Yongliang Fan, Zuimin Jiang (Fudan Univ., China)
Page	pp. 249 - 250

P2-3 (Formation and Characterization of Group IV based Nanostructures)

Title	RHEED Study of Initial Stages MBE Growth of Si_xSn_yGe_1-x-y on Si(100)
Author	*Alexandr Nikiforov, Vladimir Mashanov, Vyacheslav Timofeev, Oleg Pchelyakov (Rzhanov Institute of Semiconductor Physics SB RAS, Russian Federation), H.-H. Cheng (National Taiwan Univ., Taiwan)
Page	pp. 251 - 252

P2-4 (Formation and Characterization of Group IV based Nanostructures)

Title	Orientation-Stabilization of Ge(111) on Insulator by Nano-Patterning in Rapid-Melting Growth
Author	*Mohammad Anisuzzaman, Shunpei Muta, Masanao Takahashi (Kyushu Univ., Japan), Abdul Manaf Bin Hashim (Univ. Teknologi Malaysia, Malaysia), Masanobu Miyao, Taizoh Sadoh (Kyushu Univ., Japan)
Page	pp. 253 - 254

P2-5 (Formation and Characterization of Group IV based Nanostructures)

Title	Effect of Deposition Rate on the Characteristics of Ge Quantum Dots on Si (001) Substrate
Author	*Kazuhiro Gotoh (Tokyo Inst. of Tech., Japan), Ryuji Oshima, Takeyoshi Sugaya, Isao Sakata, Koji Matsubara (AIST, Japan), Michio Kondo (Tokyo Inst. of Tech./AIST, Japan)
Page	pp. 255 - 256

P2-6 (Formation and Characterization of Group IV based Nanostructures)

Title	Periodic Arrays of Nanopores Made on Silicon with a Self-assembled Lithographic Process
Author	*S. L. Cheng, Y. H. Lin, S. W. Lee (National Central Univ., Taiwan)
Page	pp. 257 - 258

P2-7 (Formation and Characterization of Group IV based Nanostructures)

Title	GeSi Nanoislands on Miscut Si(001) Substrates
Author	*Tong Zhou, Zhenyang Zhong (Fudan Univ., China)
Page	pp. 259 - 260

P2-8 (Growth, Characterization and Applications of Dielectric Materials)

Title	An Accurate Characterization of Metal-Insulator-Semiconductor Interface-State by Deep-Level Transient Spectroscopy and Its Application on Y₂O₃/Ge Gate Stacks with Ultrathin GeO_x Interlayer
Author	*Dong Wang, Yuta Nagatomi, Shuta Kojima, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima (Kyushu Univ., Japan)
Page	pp. 261 - 262

P2-9 (Growth, Characterization and Applications of Dielectric Materials)

Title	Electrical and Structural Characterization of Thermally Grown GeO₂ on Epitaxial Ge on a Si(001) Substrate
Author	*Catarina Beatriz Antunes Casteleiro, Maksym Myronov, John Edward Halpin, Vishal Ajit Shah, David R Leadley (Univ. of Warwick, U.K.)
Page	pp. 263 - 264

P2-10 (Growth, Characterization and Applications of Dielectric Materials)

Title	In Situ Formation of Hafnium Silicate on Si Substrate by Atomic Layer Deposition with Tetrakis(dimethylamino)hafnium and Microwave-Generated Atomic Oxygen
Author	*Hiroki Ishizaki, Yohei Otani (Tokyo Univ. of Science, Suwa, Japan), Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato (Univ. of Yamanashi, Japan), Toshiyuki Takamatsu (SST. Inc., Japan), Yukio Fukuda (Tokyo Univ. of Science, Suwa, Japan)
Page	pp. 265 - 266

P2-11 (Growth, Characterization and Applications of Dielectric Materials)

Title	Studies of Local Electric Properties and Annealing Behaviors of Thin Er₂O₃ Films Grown on Ge Substratess
Author	H. Y. Zhang, W. Wang (Fudan Univ., China), T. Ji (Taiyuan Univ., China), X. J. Yang, *Z. M. Jiang (Fudan Univ., China)
Page	pp. 267 - 268

P2-12 (Growth, Characterization and Applications of Dielectric Materials)

Title	Solid-Phase Epitaxial Growth of HfO₂ Ultra-Thin Films on Si Substrates using Rapid Thermal Crystallization Technique
Author	*Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota (AIST, Japan)
Page	pp. 269 - 270

P2-13 (Thin Film Growth and Characterization)

Title	Switchable Photo-Induced Current of Strongly Correlated Ferroelectric YMnO₃ Thin Films
Author	*Norifumi Fujimura, Yuta Okumura, Hiroshi Uga, Takeshi Yoshimura, Atsushi Ashida (Osaka Prefecture Univ., Japan)
Page	pp. 271 - 272

P2-14 (Thin Film Growth and Characterization)

Title	Determination of Bandgap Energy of Thermally-Grown Si- and Ge- Oxides from Energy Loss Spectra of Photoelectrons
Author	*Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 273 - 274

P2-15 (Thin Film Growth and Characterization)

Title	Investigation of Consequent Process-Induced Stress for NMOSFET with a Sunken STI Pattern
Author	C. C. Lee (Chung Yuan Christian Univ., Taiwan), C. H. Liu, R. H. Deng (National Taiwan Normal Univ., Taiwan), H. W. Hsu (National Taipei Univ. of Tech., Taiwan), *T. L. Tzeng (Chung Yuan Christian Univ., Taiwan)
Page	pp. 275 - 276

P2-16 (Thin Film Growth and Characterization)

Title	The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics and Different Stack Structures
Author	*Kuei-Chih Lin (Ming Chuan Univ., Taiwan), Ming-Jenq Twu, Chun-Hua Chou, Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan)
Page	pp. 277 - 278

P2-17 (Thin Film Growth and Characterization)

Title	Photo-induced Current in AlC/ Sapphire Grown by Metalorganic Chemical Vapor Deposition
Author	Yuya Ohnishi, Dohyung Kim, *Shiro Sakai (Tokushima Univ., Japan)
Page	pp. 279 - 280

P2-18 (Thin Film Growth and Characterization)

Title	Effective Use of Source Gas for ¹²C Enriched Diamond Growth
Author	*Tokuyuki Teraji, Takashi Taniguchi, Satoshi Koizumi, Yasuo Koide (NIMS, Japan), Junichi Isoya (Univ. of Tsukuba, Japan)
Page	pp. 281 - 282

P2-19 (Thin Film Growth and Characterization)

Title	High-Luminance and High-Efficiency Multi-Chip LED Array Packaging Platform on Silicon Substrate with Nanoscale Anodized Aluminum Oxide
Author	*Cong Wang, Sung-Jin Cho, Nam-Young Kim (Kwangwoon Univ., Republic of Korea)
Page	pp. 283 - 284

P2-20 (Thin Film Growth and Characterization)

Title	Effect of Si₃N₄ / SiO₂ Multiple Passivation Method for Optimized DC Characteristics in 0.1 um T-Gate AlGaAs/InGaAs/GaAs Pseudomorphic HEMT by Plasma Enhanced Chemical Vapor Deposition
Author	*Sung-Jin Cho, Cong Wang, Nam-Young Kim (Kwangwoon Univ., Republic of Korea)
Page	pp. 285 - 286

P2-21 (Thin Film Growth and Characterization)

Title	Characteristics of Strain-Relaxed SiGe Thin Films Grown with Compositionally Graded Buffer Layers on Si (001) Substrate
Author	*Ryuji Oshima, Mitsuyuki Yamanaka, Hitoshi Kawanami, Hidetaka Takato, Koji Matsubara, Isao Sakata (AIST, Japan)
Page	pp. 287 - 288

P2-22 (Thin Film Growth and Characterization)

Title	Systematic Study on Defect Formation and HEMT Operation of Low-Carbon Doped GaN Layers
Author	*Takeshi Tanaka, Yohei Otoki (Hitachi Cable Ltd., Japan), Kenji Shiojima (Univ. of Fukui, Japan), Yutaka Tokuda (Aichi Inst. of Tech., Japan)
Page	pp. 289 - 290

P2-23 (Thin Film Growth and Characterization)

Title	Synchronized B and ¹³C Diamond Delta Structures for an Ultimate in-Depth Chemical Characterization
Author	*Alexandre Fiori (NIMS/Univ. Joseph Fourier, France), François Jomard (Univ. de Versailles St-Quentin-en-Yvelines, France), Tokuyuki Teraji, Satoshi Koizumi (NIMS, Japan), Junichi Isoya (Univ. of Tsukuba, Japan), Etienne Gheeraert, Etienne Bustarret (Univ. Joseph Fourier, France)
Page	pp. 291 - 292

P2-24 (Thin Film Growth and Characterization)

Title	Thermal Annealing Effect on Charge States of K Centers in Low-Pressure Chemical Vapor Deposited Silicon Nitride Films
Author	*Aran Suzuki, N. Shakoor, Kiyoteru Kobayashi (Tokai Univ., Japan)
Page	pp. 293 - 294

P2-25 (Thin Film Growth and Characterization)

Title	Epitaxial Growth of Si on Co_1-xNi_xSi₂ Templates Using Molecular Beam Epitaxy
Author	Roger P. Chang, *Wei-Xin Ni (Linköping Univ., Sweden), Xindong Gao, Shi-Li Zhang (Uppsala Univ., Sweden)
Page	pp. 295 - 296

P2-26 (Thin Film Growth and Characterization)

Title	Dislocation Behavior of Surface-Oxygen-Concentration Controlled Si Wafers
Author	*Hirotada Asazu, Shotaro Takeuchi, Hiroya Sannai (Osaka Univ., Japan), Haruo Sudo, Koji Araki (GlobalWafers Japan, Japan), Yoshiaki Nakamura (Osaka Univ./PREST, JST, Japan), Koji Izunome (GlobalWafers Japan, Japan), Akira Sakai (Osaka Univ., Japan)
Page	pp. 297 - 298

P2-27 (Thin Film Growth and Characterization)

Title	Conductive and Transparent V-Doped ZnO Thin Films Grown by RF Magnetron Sputtering
Author	*Shuhei Okuda, Takuya Matsuo, Hiroshi Chiba, Tatsuya Mori, Katsuyoshi Washio (Tohoku Univ., Japan)
Page	pp. 299 - 300

P2-28 (Thin Film Growth and Characterization)

Title	Thermal Stability of Conductive and Transparent V-Doped ZnO Thin Films
Author	*Hiroshi Chiba, Tatsuya Mori, Shuhei Okuda, Katsuyoshi Washio (Tohoku Univ., Japan)
Page	pp. 301 - 302

P2-29 (Thin Film Growth and Characterization)

Title	Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion
Author	*Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 303 - 304

P2-30 (Thin Film Growth and Characterization)

Title	Quantitative Evaluation of Bonding Strength of Hybrid-BOX GeOI
Author	*Yoshihiko Moriyama (AIST/Osaka Univ., Japan), Shotaro Takeuchi (Osaka Univ., Japan), Keiji Ikeda, Yuuichi Kamimuta (AIST, Japan), Akira Sakai (Osaka Univ., Japan), Koji Izunome (GlobalWafers Japan Co., Ltd., Japan), Tsutomu Tezuka (AIST, Japan)
Page	pp. 305 - 306

P2-31 (Surface and Interface Control)

Title	Extraction of Interface State Density at SiO₂/SiC Interfaces based on Impedance Measurements with Different Temperatures
Author	*Nozomi Yoshida (Univ. of Tokyo, Japan), Eiji Waki, Manabu Arai, Kimiyoshi Yamasaki (New Japan Radio Co.,Ltd, Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 307 - 308

P2-32 (Surface and Interface Control)

Title	Schottky Barrier Height Systematics Studied by Partisan Interlayer
Author	Wei Long, Yang Li, *Raymond Tung (City Univ. of New York, U.S.A.)
Page	pp. 309 - 310

P2-33 (Surface and Interface Control)

Title	Study of Strong Fermi Level Pinning at Metal/Germanium Interface Based on the Impact of Ultra-thin Insulator Insertion
Author	Tomonori Nishimura, Toshimitsu Nakamura, Akira Toriumi (Univ. of Tokyo/JST, CREST, Japan)
Page	pp. 311 - 312

P2-34 (Formation and Characterization of Nanostructures)

Title	Growth of Rutile TiO₂ Nanorods on Ti Metal Substrates by Thermal Oxidation Technique
Author	Tomoji Matsushita, Wen Li, Kaito Nakane, *Hirokazu Tatsuoka (Shizuoka Univ., Japan)
Page	pp. 313 - 314

P2-35 (Formation and Characterization of Nanostructures)

Title	Characterization of Anisotropic Strain Relaxation of Ge-Rich SGOI Nanowire Formed by the Two-Step Ge-Condensation Technique with High-NA and Oil-Immersion Raman Spectroscopy
Author	Koji Usuda (AIST, Japan), Daisuke Kosemura (Meiji Univ., Japan), Keiji Ikeda (AIST, Japan), Hiroki Hashiguti, Motohiro Tomita, Atsushi Ogura (Meiji Univ., Japan), Tsutomu Tezuka (AIST, Japan)
Page	pp. 315 - 316

P2-36 (Formation and Characterization of Nanostructures)

Title	Optical Studies of Electronic Transitions in Self-Assembled GeSi Dots Grown by Molecular Beam Epitaxy
Author	Bouchaib Adnane, Fredrik Karlsson, Göran V. Hansson, Per-Olof Holtz, *Wei-Xin Ni (Linköping Univ., Sweden)
Page	pp. 317 - 318

P2-37 (Formation and Characterization of Nanostructures)

Title	High Density Formation of CoPt Alloy Nanodots Induced by Remote H₂ Plasma
Author	*Ryo Fukuoka, Hai Zhang, Yuuki Kabeya, Katsunori Makihara (Nagoya Univ., Japan), Akio Ohta, Mitsuhisa Ikeda (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 319 - 320

P2-38 (Formation and Characterization of Nanostructures)

Title	Formation of a Honeycomb Texture for Crystalline Silicon Solar Cells Using a Mask-Less Process
Author	*Chen-Hsun Du, Teng-Yu Wang, Chien-Hsun Chen (ITRI, Taiwan), J. Andrew Yeh (National Tsing Hua Univ., Taiwan)
Page	pp. 321 - 322

P2-39 (Formation and Characterization of Nanostructures)

Title	Instant and Slow Martensitic Transformation of Higher-k (k>50) Metastable HfO₂ Films
Author	*Shinji Migita (AIST, Japan), Yukimune Watanabe (Seiko Epson Corp., Japan), Yukinori Morita (AIST, Japan), Noriyuki Taoka (Nagoya Univ., Japan), Wataru Mizubayashi, Meishoku Masahara (AIST, Japan), Toshihide Nabatame (NIMS, Japan), Akira Toriumi (Univ. of Tokyo, Japan), Hiroyuki Ota (AIST, Japan)
Page	pp. 323 - 324

P2-40 (Formation and Characterization of Nanostructures)

Title	Epitaxial Growth of Strained Ge Layer on Si_1-xGe_x Substrate Formed with Traveling Liquidus-Zone Method
Author	*Takashi Yamaha, Osamu Nakatsuka, Noriyuki Taoka (Nagoya Univ., Japan), Kyoichi Kinoshita, Shinichi Yoda (JAXA, Japan), Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 325 - 326

P2-41 (Process and Device Technology)

Title	Low Temperature Fabrication of Ohmic Contact for p-Type 4H-SiC Using Al/Ti/Sn
Author	*Kota Hatayama, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan)
Page	pp. 327 - 328

P2-42 (Process and Device Technology)

Title	Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET
Author	*Keisuke Yamamoto, Kojiro Asakawa, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan)
Page	pp. 329 - 330

P2-43 (Process and Device Technology)

Title	SiN_x Passivation Technology and Double Field-plate Structure in AlGaN/GaN HEMT Process on Si (111) Substrates
Author	*Cong Wang, Sung-Jin Cho, Nam-Young Kim (Kwangwoon Univ., Republic of Korea)
Page	pp. 331 - 332

P2-44 (Process and Device Technology)

Title	Characterization of Mn₅Ge₃C_x-Contacts for Spin Injection
Author	*Inga A. Fischer, Jens Gebauer, Michael Oehme, Erlend Rolseth (Univ. of Stuttgart, Germany), Matthieu Petit, Vinh Le Thanh (Aix-Marseille Univ., France), Patrick Winkel, Christoph Sürgers (Karlsruhe Inst. of Tech., Germany), Jörg Schulze (Univ. of Stuttgart, Germany)
Page	pp. 333 - 334

P2-45 (Process and Device Technology)

Title	Dielectric Thin Film Layer on AlGaN/GaN HEMT using Rapid Thermal Annealing Protection Process for Optimization of Nano-Scale Surface Morphology Ohmic Contact
Author	*Sung Jin Cho, Cong Wang, Nam Young Kim (Kwangwoon Univ., Republic of Korea)
Page	pp. 335 - 336

P2-46 (Process and Device Technology)

Title	Quaternary InAlGaN-Barrier GaN MOS-HEMT with Enhancement-Mode Operation
Author	P.-G. Chen, *M. H. Lee (National Taiwan Normal Univ., Taiwan), C. Y. Tsai, A. Chin (National Chiao Tung Univ., Taiwan)
Page	pp. 337 - 338

P2-47 (Process and Device Technology)

Title	Hole Mobility in Strained Ge PMOSFET with a GeSn Alloy S/D Stressor
Author	R.-Y. He, *C.-F. Lee, K.-T. Chen, S. T. Chang (National Chung Hsing Univ., Taiwan)
Page	pp. 339 - 340

P2-48 (Process and Device Technology)

Title	High-Temperature ICTS Study on SiN Deposition Damages for Low-Mg-Doped p-GaN Schottky Diodes
Author	Kenji Shiojima, Hisashi Wakayama, Toshichika Aoki (Univ. of Fukui, Japan), Naoki Kaneda (Hitachi Cable Ltd., Japan), Kazuki Nomoto (Univ. of Notre Dame, U.S.A.), Tomoyoshi Mishima (Hitachi Cable Ltd., Japan)
Page	pp. 341 - 342

P2-49 (Process and Device Technology)

Title	Influence of Plasma Induced Defects on Electrical Characteristics of AlGaN/GaN Heterostructure and Their Annealing Behavior
Author	*Takuma Takimoto, Koji Takeshita, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ., Japan)
Page	pp. 343 - 344

P2-50 (Process and Device Technology)

Title	Growth and Characterization of Heavily Phosphorus-doped Homoepitaxial (001) Diamond Films for Deep-Ultraviolet Light Emitting Device
Author	*Osamu Maida, Shuhei Tada, Toshimichi Ito (Osaka Univ., Japan)
Page	pp. 345 - 346

P2-51 (Process and Device Technology)

Title	Aggressive Junction-Depth Scaling for NBTI Reliability of Metal Gate Electrode and High-k Dielectrics Advanced CMOS Technology
Author	Yasmin Abdul Wahab (Univ. of Malaya, Malaysia), *H. Hussin (Univ. of Malaya/Univ. Teknologi MARA, Malaysia), Norhayati Soin (Univ. of Malaya, Malaysia), Muhammad Faiz Bukhori (Univ. Kebangsaan Malaysia, Malaysia)
Page	pp. 347 - 348

Thursday, June 6, 2013

Session C1 Core-to-Core 1
Time: 9:10 - 11:15 Thursday, June 6, 2013

C1-1 (Time: 9:10 - 9:15)

Title	Opening
Author	TBA

C1-2 (Time: 9:15 - 9:45)

Title	Oxidation of Germanium – What is different from Oxidation of Silicon ?
Author	Akira Toriumi (Univ. Tokyo, Japan)

C1-3 (Time: 9:45 - 10:15)

Title	High Quality Ge Gate Stacks Technologies by Using Plasma Oxidation
Author	Shinichi Takagi, Rui Zhang, Mitsuru Takenaka (Univ. Tokyo, Japan)

C1-4 (Time: 10:15 - 10:45)

Title	Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices
Author	Seiichi Miyazaki, Katsunori Makihara (Nagoya Univ., Japan), Mitsuhisa Ikeda (Hiroshima Univ., Japan)

C1-5 (Time: 10:45 - 11:15)

Title	Comparing Photoluminescence Measurements with Theoretical Predictions for Transition Energies in Ge Quantum Dot Structures
Author	I.A. Fischer, P. Tighineanu, K. Busch, M. Paul, M. Jetter, P. Michler, O. Kirfel, F. Oliveira, E. Rolseth, J. Schulze (Univ. Stuttgart, Germany)

Session C2 Core-to-Core 2
Time: 11:45 - 12:45 Thursday, June 6, 2013

C2-1 (Time: 11:45 - 12:15)

Title	High Quality Ge Grown on Si for Photonics Device Integration into BiCMOS
Author	Y. Yamamoto, P. Zaumseil, S. Lischke, D. Knoll, L. Zimmermann (IHP, Germany), J. Murota (Tohoku Univ., Japan), B. Tillack (IHP, TU. Berlin, Germany)

C2-2 (Time: 12:15 - 12:45)

Title	Atomically Controlled Processing of Group IV Semiconductors by CVD for Ultralarge Scale Integration
Author	J. Murota, M. Sakuraba (Tohoku Univ., Japan), B. Tillack (IHP, TU Berlin, Germany)

Session C3 Core-to-Core 3
Time: 14:15 - 15:15 Thursday, June 6, 2013

C3-1 (Time: 14:15 - 14:45)

Title	Enhancement of Magnetic Properties and Thermal Stability of Mn₅Ge₃ Epilayers upon Carbon Doping
Author	V. Le Thanh, A. Spiesser, L. Michez, M.T. Dau, M. Petit (Aix-Marseille Univ., France)

C3-2 (Time: 14:45 - 15:15)

Title	Dopant diffusion and activation in Excimer laser annealed Group IV semiconductors
Author	S. Stefanov, F. Gontad, J.C. Conde, C. Serra, A. Benedetti, G.V. Luong (Univ. Vigo, Spain), S. Wirths, U. Breuer (Forschungszentrum Juelich, Germany), P. Alpuim (Univ. Minho, Portugal), D. Buca (Forschungszentrum Juelich, Germany), S. Chiussi (Univ. Vigo, Spain)

Session C4 Core-to-Core 4
Time: 15:30 - 16:55 Thursday, June 6, 2013

C4-1 (Time: 15:30 - 16:00)

Title	Potential of GeSn and GeSiSn for Future Nanoelectronic Device Applications
Author	S. Zaima (Nagoya Univ., Japan)

C4-2 (Time: 16:00 - 16:30)

Title	Oxygen in Si Epitaxial Growth: from Interface Contamination to Si/O Superlattice Engineering
Author	M. Caymax, S. Jayachandran, Lu Augustin, A. Delabie, R. Loo, A. Hikavyy, G. Pourtois, W. Vandervorst, M. Heyns (imec, Belgium)

C4-3 (Time: 16:30 - 16:50)

Title	Growth of Tensile-Strained Germanium and Heavy Phosphorous Doping Using a Specific GaP Decomposition Cell
Author	K.P. Luong, A. Ghrib, M.T. Dau, M. Petit, M. El-Kurdi, P. Boucaud, V. Le Thanh (Aix-Marseille Univ., France)

C4-4 (Time: 16:50 - 16:55)

Title	Closing
Author	TBA

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) Technical Program

Session Schedule

List of Papers

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
Technical Program