ICSI-8 and ISCSI-VI Technical Program

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session P2 Poster Session II
Time: 17:50 - 19:50 Tuesday, June 4, 2013
Chair: S. Takeuchi (Osaka Univ., Japan)

P2-1 (Formation and Characterization of Group IV based Nanostructures)

Title	Towards Controllable Growth of SiGe Single and Double Quantum Dot Nanostructures
Author	*Y. J. Ma, F. S. Huang (Fudan Univ., China), C. Zeng (Huazhong Univ. of Science and Tech., China), T. Zhou, Z. Zhong, Y. L. Fan, X. J. Yang (Fudan Univ., China), J. S. Xia (Huazhong Univ. of Science and Tech., China), Z. M. Jiang (Fudan Univ., China)
Page	pp. 247 - 248

P2-2 (Formation and Characterization of Group IV based Nanostructures)

Title	Optical Properties of Coupled Three-Dimensional Ge Quantum Dot Crystals
Author	*Yingjie Ma, Zhenyang Zhong, Quan Lv (Fudan Univ., China), Xingjun Wang (Chinese Academy of Sciences, China), Tong Zhou, Yongliang Fan, Zuimin Jiang (Fudan Univ., China)
Page	pp. 249 - 250

P2-3 (Formation and Characterization of Group IV based Nanostructures)

Title	RHEED Study of Initial Stages MBE Growth of Si_xSn_yGe_1-x-y on Si(100)
Author	*Alexandr Nikiforov, Vladimir Mashanov, Vyacheslav Timofeev, Oleg Pchelyakov (Rzhanov Institute of Semiconductor Physics SB RAS, Russian Federation), H.-H. Cheng (National Taiwan Univ., Taiwan)
Page	pp. 251 - 252

P2-4 (Formation and Characterization of Group IV based Nanostructures)

Title	Orientation-Stabilization of Ge(111) on Insulator by Nano-Patterning in Rapid-Melting Growth
Author	*Mohammad Anisuzzaman, Shunpei Muta, Masanao Takahashi (Kyushu Univ., Japan), Abdul Manaf Bin Hashim (Univ. Teknologi Malaysia, Malaysia), Masanobu Miyao, Taizoh Sadoh (Kyushu Univ., Japan)
Page	pp. 253 - 254

P2-5 (Formation and Characterization of Group IV based Nanostructures)

Title	Effect of Deposition Rate on the Characteristics of Ge Quantum Dots on Si (001) Substrate
Author	*Kazuhiro Gotoh (Tokyo Inst. of Tech., Japan), Ryuji Oshima, Takeyoshi Sugaya, Isao Sakata, Koji Matsubara (AIST, Japan), Michio Kondo (Tokyo Inst. of Tech./AIST, Japan)
Page	pp. 255 - 256

P2-6 (Formation and Characterization of Group IV based Nanostructures)

Title	Periodic Arrays of Nanopores Made on Silicon with a Self-assembled Lithographic Process
Author	*S. L. Cheng, Y. H. Lin, S. W. Lee (National Central Univ., Taiwan)
Page	pp. 257 - 258

P2-7 (Formation and Characterization of Group IV based Nanostructures)

Title	GeSi Nanoislands on Miscut Si(001) Substrates
Author	*Tong Zhou, Zhenyang Zhong (Fudan Univ., China)
Page	pp. 259 - 260

P2-8 (Growth, Characterization and Applications of Dielectric Materials)

Title	An Accurate Characterization of Metal-Insulator-Semiconductor Interface-State by Deep-Level Transient Spectroscopy and Its Application on Y₂O₃/Ge Gate Stacks with Ultrathin GeO_x Interlayer
Author	*Dong Wang, Yuta Nagatomi, Shuta Kojima, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima (Kyushu Univ., Japan)
Page	pp. 261 - 262

P2-9 (Growth, Characterization and Applications of Dielectric Materials)

Title	Electrical and Structural Characterization of Thermally Grown GeO₂ on Epitaxial Ge on a Si(001) Substrate
Author	*Catarina Beatriz Antunes Casteleiro, Maksym Myronov, John Edward Halpin, Vishal Ajit Shah, David R Leadley (Univ. of Warwick, U.K.)
Page	pp. 263 - 264

P2-10 (Growth, Characterization and Applications of Dielectric Materials)

Title	In Situ Formation of Hafnium Silicate on Si Substrate by Atomic Layer Deposition with Tetrakis(dimethylamino)hafnium and Microwave-Generated Atomic Oxygen
Author	*Hiroki Ishizaki, Yohei Otani (Tokyo Univ. of Science, Suwa, Japan), Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato (Univ. of Yamanashi, Japan), Toshiyuki Takamatsu (SST. Inc., Japan), Yukio Fukuda (Tokyo Univ. of Science, Suwa, Japan)
Page	pp. 265 - 266

P2-11 (Growth, Characterization and Applications of Dielectric Materials)

Title	Studies of Local Electric Properties and Annealing Behaviors of Thin Er₂O₃ Films Grown on Ge Substratess
Author	H. Y. Zhang, W. Wang (Fudan Univ., China), T. Ji (Taiyuan Univ., China), X. J. Yang, *Z. M. Jiang (Fudan Univ., China)
Page	pp. 267 - 268

P2-12 (Growth, Characterization and Applications of Dielectric Materials)

Title	Solid-Phase Epitaxial Growth of HfO₂ Ultra-Thin Films on Si Substrates using Rapid Thermal Crystallization Technique
Author	*Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Meishoku Masahara, Hiroyuki Ota (AIST, Japan)
Page	pp. 269 - 270

P2-13 (Thin Film Growth and Characterization)

Title	Switchable Photo-Induced Current of Strongly Correlated Ferroelectric YMnO₃ Thin Films
Author	*Norifumi Fujimura, Yuta Okumura, Hiroshi Uga, Takeshi Yoshimura, Atsushi Ashida (Osaka Prefecture Univ., Japan)
Page	pp. 271 - 272

P2-14 (Thin Film Growth and Characterization)

Title	Determination of Bandgap Energy of Thermally-Grown Si- and Ge- Oxides from Energy Loss Spectra of Photoelectrons
Author	*Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 273 - 274

P2-15 (Thin Film Growth and Characterization)

Title	Investigation of Consequent Process-Induced Stress for NMOSFET with a Sunken STI Pattern
Author	C. C. Lee (Chung Yuan Christian Univ., Taiwan), C. H. Liu, R. H. Deng (National Taiwan Normal Univ., Taiwan), H. W. Hsu (National Taipei Univ. of Tech., Taiwan), *T. L. Tzeng (Chung Yuan Christian Univ., Taiwan)
Page	pp. 275 - 276

P2-16 (Thin Film Growth and Characterization)

Title	The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics and Different Stack Structures
Author	*Kuei-Chih Lin (Ming Chuan Univ., Taiwan), Ming-Jenq Twu, Chun-Hua Chou, Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan)
Page	pp. 277 - 278

P2-17 (Thin Film Growth and Characterization)

Title	Photo-induced Current in AlC/ Sapphire Grown by Metalorganic Chemical Vapor Deposition
Author	Yuya Ohnishi, Dohyung Kim, *Shiro Sakai (Tokushima Univ., Japan)
Page	pp. 279 - 280

P2-18 (Thin Film Growth and Characterization)

Title	Effective Use of Source Gas for ¹²C Enriched Diamond Growth
Author	*Tokuyuki Teraji, Takashi Taniguchi, Satoshi Koizumi, Yasuo Koide (NIMS, Japan), Junichi Isoya (Univ. of Tsukuba, Japan)
Page	pp. 281 - 282

P2-19 (Thin Film Growth and Characterization)

Title	High-Luminance and High-Efficiency Multi-Chip LED Array Packaging Platform on Silicon Substrate with Nanoscale Anodized Aluminum Oxide
Author	*Cong Wang, Sung-Jin Cho, Nam-Young Kim (Kwangwoon Univ., Republic of Korea)
Page	pp. 283 - 284

P2-20 (Thin Film Growth and Characterization)

Title	Effect of Si₃N₄ / SiO₂ Multiple Passivation Method for Optimized DC Characteristics in 0.1 um T-Gate AlGaAs/InGaAs/GaAs Pseudomorphic HEMT by Plasma Enhanced Chemical Vapor Deposition
Author	*Sung-Jin Cho, Cong Wang, Nam-Young Kim (Kwangwoon Univ., Republic of Korea)
Page	pp. 285 - 286

P2-21 (Thin Film Growth and Characterization)

Title	Characteristics of Strain-Relaxed SiGe Thin Films Grown with Compositionally Graded Buffer Layers on Si (001) Substrate
Author	*Ryuji Oshima, Mitsuyuki Yamanaka, Hitoshi Kawanami, Hidetaka Takato, Koji Matsubara, Isao Sakata (AIST, Japan)
Page	pp. 287 - 288

P2-22 (Thin Film Growth and Characterization)

Title	Systematic Study on Defect Formation and HEMT Operation of Low-Carbon Doped GaN Layers
Author	*Takeshi Tanaka, Yohei Otoki (Hitachi Cable Ltd., Japan), Kenji Shiojima (Univ. of Fukui, Japan), Yutaka Tokuda (Aichi Inst. of Tech., Japan)
Page	pp. 289 - 290

P2-23 (Thin Film Growth and Characterization)

Title	Synchronized B and ¹³C Diamond Delta Structures for an Ultimate in-Depth Chemical Characterization
Author	*Alexandre Fiori (NIMS/Univ. Joseph Fourier, France), François Jomard (Univ. de Versailles St-Quentin-en-Yvelines, France), Tokuyuki Teraji, Satoshi Koizumi (NIMS, Japan), Junichi Isoya (Univ. of Tsukuba, Japan), Etienne Gheeraert, Etienne Bustarret (Univ. Joseph Fourier, France)
Page	pp. 291 - 292

P2-24 (Thin Film Growth and Characterization)

Title	Thermal Annealing Effect on Charge States of K Centers in Low-Pressure Chemical Vapor Deposited Silicon Nitride Films
Author	*Aran Suzuki, N. Shakoor, Kiyoteru Kobayashi (Tokai Univ., Japan)
Page	pp. 293 - 294

P2-25 (Thin Film Growth and Characterization)

Title	Epitaxial Growth of Si on Co_1-xNi_xSi₂ Templates Using Molecular Beam Epitaxy
Author	Roger P. Chang, *Wei-Xin Ni (Linköping Univ., Sweden), Xindong Gao, Shi-Li Zhang (Uppsala Univ., Sweden)
Page	pp. 295 - 296

P2-26 (Thin Film Growth and Characterization)

Title	Dislocation Behavior of Surface-Oxygen-Concentration Controlled Si Wafers
Author	*Hirotada Asazu, Shotaro Takeuchi, Hiroya Sannai (Osaka Univ., Japan), Haruo Sudo, Koji Araki (GlobalWafers Japan, Japan), Yoshiaki Nakamura (Osaka Univ./PREST, JST, Japan), Koji Izunome (GlobalWafers Japan, Japan), Akira Sakai (Osaka Univ., Japan)
Page	pp. 297 - 298

P2-27 (Thin Film Growth and Characterization)

Title	Conductive and Transparent V-Doped ZnO Thin Films Grown by RF Magnetron Sputtering
Author	*Shuhei Okuda, Takuya Matsuo, Hiroshi Chiba, Tatsuya Mori, Katsuyoshi Washio (Tohoku Univ., Japan)
Page	pp. 299 - 300

P2-28 (Thin Film Growth and Characterization)

Title	Thermal Stability of Conductive and Transparent V-Doped ZnO Thin Films
Author	*Hiroshi Chiba, Tatsuya Mori, Shuhei Okuda, Katsuyoshi Washio (Tohoku Univ., Japan)
Page	pp. 301 - 302

P2-29 (Thin Film Growth and Characterization)

Title	Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion
Author	*Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 303 - 304

P2-30 (Thin Film Growth and Characterization)

Title	Quantitative Evaluation of Bonding Strength of Hybrid-BOX GeOI
Author	*Yoshihiko Moriyama (AIST/Osaka Univ., Japan), Shotaro Takeuchi (Osaka Univ., Japan), Keiji Ikeda, Yuuichi Kamimuta (AIST, Japan), Akira Sakai (Osaka Univ., Japan), Koji Izunome (GlobalWafers Japan Co., Ltd., Japan), Tsutomu Tezuka (AIST, Japan)
Page	pp. 305 - 306

P2-31 (Surface and Interface Control)

Title	Extraction of Interface State Density at SiO₂/SiC Interfaces based on Impedance Measurements with Different Temperatures
Author	*Nozomi Yoshida (Univ. of Tokyo, Japan), Eiji Waki, Manabu Arai, Kimiyoshi Yamasaki (New Japan Radio Co.,Ltd, Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 307 - 308

P2-32 (Surface and Interface Control)

Title	Schottky Barrier Height Systematics Studied by Partisan Interlayer
Author	Wei Long, Yang Li, *Raymond Tung (City Univ. of New York, U.S.A.)
Page	pp. 309 - 310

P2-33 (Surface and Interface Control)

Title	Study of Strong Fermi Level Pinning at Metal/Germanium Interface Based on the Impact of Ultra-thin Insulator Insertion
Author	Tomonori Nishimura, Toshimitsu Nakamura, Akira Toriumi (Univ. of Tokyo/JST, CREST, Japan)
Page	pp. 311 - 312

P2-34 (Formation and Characterization of Nanostructures)

Title	Growth of Rutile TiO₂ Nanorods on Ti Metal Substrates by Thermal Oxidation Technique
Author	Tomoji Matsushita, Wen Li, Kaito Nakane, *Hirokazu Tatsuoka (Shizuoka Univ., Japan)
Page	pp. 313 - 314

P2-35 (Formation and Characterization of Nanostructures)

Title	Characterization of Anisotropic Strain Relaxation of Ge-Rich SGOI Nanowire Formed by the Two-Step Ge-Condensation Technique with High-NA and Oil-Immersion Raman Spectroscopy
Author	Koji Usuda (AIST, Japan), Daisuke Kosemura (Meiji Univ., Japan), Keiji Ikeda (AIST, Japan), Hiroki Hashiguti, Motohiro Tomita, Atsushi Ogura (Meiji Univ., Japan), Tsutomu Tezuka (AIST, Japan)
Page	pp. 315 - 316

P2-36 (Formation and Characterization of Nanostructures)

Title	Optical Studies of Electronic Transitions in Self-Assembled GeSi Dots Grown by Molecular Beam Epitaxy
Author	Bouchaib Adnane, Fredrik Karlsson, Göran V. Hansson, Per-Olof Holtz, *Wei-Xin Ni (Linköping Univ., Sweden)
Page	pp. 317 - 318

P2-37 (Formation and Characterization of Nanostructures)

Title	High Density Formation of CoPt Alloy Nanodots Induced by Remote H₂ Plasma
Author	*Ryo Fukuoka, Hai Zhang, Yuuki Kabeya, Katsunori Makihara (Nagoya Univ., Japan), Akio Ohta, Mitsuhisa Ikeda (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 319 - 320

P2-38 (Formation and Characterization of Nanostructures)

Title	Formation of a Honeycomb Texture for Crystalline Silicon Solar Cells Using a Mask-Less Process
Author	*Chen-Hsun Du, Teng-Yu Wang, Chien-Hsun Chen (ITRI, Taiwan), J. Andrew Yeh (National Tsing Hua Univ., Taiwan)
Page	pp. 321 - 322

P2-39 (Formation and Characterization of Nanostructures)

Title	Instant and Slow Martensitic Transformation of Higher-k (k>50) Metastable HfO₂ Films
Author	*Shinji Migita (AIST, Japan), Yukimune Watanabe (Seiko Epson Corp., Japan), Yukinori Morita (AIST, Japan), Noriyuki Taoka (Nagoya Univ., Japan), Wataru Mizubayashi, Meishoku Masahara (AIST, Japan), Toshihide Nabatame (NIMS, Japan), Akira Toriumi (Univ. of Tokyo, Japan), Hiroyuki Ota (AIST, Japan)
Page	pp. 323 - 324

P2-40 (Formation and Characterization of Nanostructures)

Title	Epitaxial Growth of Strained Ge Layer on Si_1-xGe_x Substrate Formed with Traveling Liquidus-Zone Method
Author	*Takashi Yamaha, Osamu Nakatsuka, Noriyuki Taoka (Nagoya Univ., Japan), Kyoichi Kinoshita, Shinichi Yoda (JAXA, Japan), Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 325 - 326

P2-41 (Process and Device Technology)

Title	Low Temperature Fabrication of Ohmic Contact for p-Type 4H-SiC Using Al/Ti/Sn
Author	*Kota Hatayama, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan)
Page	pp. 327 - 328

P2-42 (Process and Device Technology)

Title	Fabrication of TiN/Si Contact with Low Electron Barrier Height and Its Application to Back-Gate MOSFET
Author	*Keisuke Yamamoto, Kojiro Asakawa, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan)
Page	pp. 329 - 330

P2-43 (Process and Device Technology)

Title	SiN_x Passivation Technology and Double Field-plate Structure in AlGaN/GaN HEMT Process on Si (111) Substrates
Author	*Cong Wang, Sung-Jin Cho, Nam-Young Kim (Kwangwoon Univ., Republic of Korea)
Page	pp. 331 - 332

P2-44 (Process and Device Technology)

Title	Characterization of Mn₅Ge₃C_x-Contacts for Spin Injection
Author	*Inga A. Fischer, Jens Gebauer, Michael Oehme, Erlend Rolseth (Univ. of Stuttgart, Germany), Matthieu Petit, Vinh Le Thanh (Aix-Marseille Univ., France), Patrick Winkel, Christoph Sürgers (Karlsruhe Inst. of Tech., Germany), Jörg Schulze (Univ. of Stuttgart, Germany)
Page	pp. 333 - 334

P2-45 (Process and Device Technology)

Title	Dielectric Thin Film Layer on AlGaN/GaN HEMT using Rapid Thermal Annealing Protection Process for Optimization of Nano-Scale Surface Morphology Ohmic Contact
Author	*Sung Jin Cho, Cong Wang, Nam Young Kim (Kwangwoon Univ., Republic of Korea)
Page	pp. 335 - 336

P2-46 (Process and Device Technology)

Title	Quaternary InAlGaN-Barrier GaN MOS-HEMT with Enhancement-Mode Operation
Author	P.-G. Chen, *M. H. Lee (National Taiwan Normal Univ., Taiwan), C. Y. Tsai, A. Chin (National Chiao Tung Univ., Taiwan)
Page	pp. 337 - 338

P2-47 (Process and Device Technology)

Title	Hole Mobility in Strained Ge PMOSFET with a GeSn Alloy S/D Stressor
Author	R.-Y. He, *C.-F. Lee, K.-T. Chen, S. T. Chang (National Chung Hsing Univ., Taiwan)
Page	pp. 339 - 340

P2-48 (Process and Device Technology)

Title	High-Temperature ICTS Study on SiN Deposition Damages for Low-Mg-Doped p-GaN Schottky Diodes
Author	Kenji Shiojima, Hisashi Wakayama, Toshichika Aoki (Univ. of Fukui, Japan), Naoki Kaneda (Hitachi Cable Ltd., Japan), Kazuki Nomoto (Univ. of Notre Dame, U.S.A.), Tomoyoshi Mishima (Hitachi Cable Ltd., Japan)
Page	pp. 341 - 342

P2-49 (Process and Device Technology)

Title	Influence of Plasma Induced Defects on Electrical Characteristics of AlGaN/GaN Heterostructure and Their Annealing Behavior
Author	*Takuma Takimoto, Koji Takeshita, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ., Japan)
Page	pp. 343 - 344

P2-50 (Process and Device Technology)

Title	Growth and Characterization of Heavily Phosphorus-doped Homoepitaxial (001) Diamond Films for Deep-Ultraviolet Light Emitting Device
Author	*Osamu Maida, Shuhei Tada, Toshimichi Ito (Osaka Univ., Japan)
Page	pp. 345 - 346

P2-51 (Process and Device Technology)

Title	Aggressive Junction-Depth Scaling for NBTI Reliability of Metal Gate Electrode and High-k Dielectrics Advanced CMOS Technology
Author	Yasmin Abdul Wahab (Univ. of Malaya, Malaysia), *H. Hussin (Univ. of Malaya/Univ. Teknologi MARA, Malaysia), Norhayati Soin (Univ. of Malaya, Malaysia), Muhammad Faiz Bukhori (Univ. Kebangsaan Malaysia, Malaysia)
Page	pp. 347 - 348

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)