ICSI-8 and ISCSI-VI Technical Program

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session P1 Poster Session I
Time: 17:20 - 19:20 Monday, June 3, 2013
Chair: K. Makihara (Nagoya Univ., Japan)

P1-1 (Growth, Characterization and Modeling of Si and Group IV)

Title	Surfactant-Mediated Epitaxy of Silicon-Germanium Films on Silicon (001) Substrates
Author	*Tobias F. Wietler, Jan Schmidt, Dominic Tetzlaff, Eberhard Bugiel (Leibniz Univ. Hannover, Germany)
Page	pp. 147 - 148

P1-2 (Growth, Characterization and Modeling of Si and Group IV)

Title	Single-Crystalline SiGe Stripes on Insulating Substrate by Segregation-Free Rapid-Melting-Growth
Author	*Ryo Matsumura, Ryusuke Kato, Yuki Tojo, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 149 - 150

P1-3 (Growth, Characterization and Modeling of Si and Group IV)

Title	Ge-Diffusion-Controlled Gold-Induced Crystallization of (100)- or (111)-Oriented Ge for Flexible Electronics
Author	*Jong-Hyeok Park (Kyushu Univ., JSPS Research Fellow, Japan), Tsuneharu Suzuki, Akira Ooato, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ., Japan)
Page	pp. 151 - 152

P1-4 (Growth, Characterization and Modeling of Si and Group IV)

Title	Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH₄-B₂H₆-H₂ Gas Mixture without Substrate Heating
Author	Yusuke Abe, *Masao Sakuraba, Junichi Murota (Tohoku Univ., Japan)
Page	pp. 153 - 154

P1-5 (Growth, Characterization and Modeling of Si and Group IV)

Title	Effects of PDA Ambient on Leakage Current in Poly-Ge TFTs
Author	*Shoichi Kabuyanagi, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST, CREST, Japan)
Page	pp. 155 - 156

P1-6 (Growth, Characterization and Modeling of Si and Group IV)

Title	Explosive Crystallization of Amorphous Germanium Films Induced by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation
Author	*Takahiro Kamikura, Shohei Hayashi, Seiji Morisaki, Yuji Fujita, Muneki Akazawa, Seiichiro Higashi (Hiroshima Univ., Japan)
Page	pp. 157 - 158

P1-7 (Growth, Characterization and Modeling of Si and Group IV)

Title	Surface Modulation of Epitaxial Ge Layer in a Narrow Trench Array
Author	*Byongju Kim, Hyunchul Jang, Sun-Wook Kim, Sangmo Koo, Dae-Hong Ko (Yonsei Univ., Republic of Korea)
Page	pp. 159 - 160

P1-8 (Growth, Characterization and Modeling of Si and Group IV)

Title	Epitaxial Growth of Si_1-xGe_x Alloy on Si(100) by ECR Ar Plasma CVD in a SiH₄-GeH₄ Gas Mixture without Substrate Heating
Author	*Naofumi Ueno, Masao Sakuraba, Junichi Murota, Shigeo Sato (Tohoku Univ., Japan)
Page	pp. 161 - 162

P1-9 (Growth, Characterization and Modeling of Si and Group IV)

Title	Structural Transition of Ge Growth on Si Induced by Submonolayer Carbon
Author	*Yuhki Itoh, Shinji Hatakeyama, Takuya Matsuo, Katsuyoshi Washio (Tohoku Univ., Japan)
Page	pp. 163 - 164

P1-10 (Growth, Characterization and Modeling of Si and Group IV)

Title	Study of Interface Trap Density in a GeSn MOS Structure by Numerical Simulation of the Electrical Characteristics
Author	*Bruno Baert (Univ. of Liege, Belgium), Somya Gupta (MTM Department, KU Leuven and IMEC, Belgium), Marcel Schmeits (Univ. of Liege, Belgium), Eddy Simoen (IMEC, Belgium), Ngoc Duy Nguyen (Univ. of Liege, Belgium)
Page	pp. 165 - 166

P1-11 (Growth, Characterization and Modeling of Si and Group IV)

Title	Effect of Boron Dopant of Si (001) Substrates on Growth of Ge Layers using Sputter Epitaxy Method
Author	*Takahiro Tsukamoto (Tokyo Univ. of Agri. and Tech., Japan), Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT, Japan), Yoshiyuki Suda (Tokyo Univ. of Agri. and Tech., Japan)
Page	pp. 167 - 168

P1-12 (Growth, Characterization and Modeling of Si and Group IV)

Title	Enhanced Au Induced Lateral Crystallization in Electron-Irradiated Amorphous Ge on SiO₂
Author	*Shin Sakiyama, Takahiro Kaneko, Takanobu Ootsubo, Takatsugu Sakai, Kazutoshi Nakashima, Kenta Moto, Masashi Yoneoka, Kenichiro Takakura, Isao Tsunoda (Kumamoto National College of Tech., Japan)
Page	pp. 169 - 170

P1-13 (Growth, Characterization and Modeling of Si and Group IV)

Title	Surface Blistering of Germanium Co-Implanted with H and He Ions: Effects of Implantation Order
Author	Jiayun Dai, *Zengfeng Di, Miao Zhang (Chinese Academy of Sciences, China)
Page	pp. 171 - 172

P1-14 (Growth, Characterization and Modeling of Si and Group IV)

Title	Large-Grained Oriented Polycrystalline Si/Al/SiO₂ Structures Formed by Al-Induced Layer Exchange Process
Author	*Ryohei Numata, Kaoru Toko (Univ. of Tsukuba, Japan), Noriyuki Saitoh, Noriko Yoshizawa (AIST, Japan), Noritaka Usami (Tohoku Univ., Japan), Takashi Suemasu (Univ. of Tsukuba, Japan)
Page	pp. 173 - 174

P1-15 (Process Technologies for Group IV based Heterostructure)

Title	3-Dimensionally-Graded SiGe-on-Insulator Stacked Structures by Successive Rapid-Melting Growth
Author	Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, *Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 175 - 176

P1-16 (Process Technologies for Group IV based Heterostructure)

Title	SiGe/Si Superlattice-Quantum-Dot Arrays Fabricated by using Nanosphere Lithography
Author	Hung-Tai Chang, Bo-Lun Wu, Shao-Liang Cheng, *Sheng-Wei Lee (National Central Univ., Taiwan)
Page	pp. 177 - 178

P1-17 (Process Technologies for Group IV based Heterostructure)

Title	N-type Doping of BaSi₂ Epitaxial Films by Phosphorus Ion Implantation and Thermal Annealing
Author	*Kosuke O. Hara (Nagoya Univ./JST, CREST, Japan), Yusuke Hoshi (Nagoya Univ., Japan), Noritaka Usami (Nagoya Univ./JST, CREST, Japan), Yasuhiro Shiraki (Tokyo City Univ., Japan), Kotaro Nakamura, Kaoru Toko (Univ. of Tsukuba, Japan), Takashi Suemasu (Univ. of Tsukuba/JST, CREST, Japan)
Page	pp. 179 - 180

P1-18 (Process Technologies for Group IV based Heterostructure)

Title	Crystalline Structures and Electrical Property of Epitaxial Ni Germanide Layers Formed on Ge(110) Substrate
Author	*Yunsheng Deng, Jun Yokoi, Osamu Nakatsuka, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 181 - 182

P1-19 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Relationship between Stress Distribution and Hot-Carrier Effect for Strained nMOSFETs
Author	*H.W. Hsu, H. S. Huang, S. Y. Chen (National Taipei Univ. of Tech., Taiwan), M. C. Wang (Minghsin Univ. of Science and Tech., Taiwan), K.C. Li (National Taipei Univ. of Tech., Taiwan), K. C. Lin (Ming Chuan Univ., Taiwan), C. H. Liu (National Taiwan Normal Univ., Taiwan)
Page	pp. 183 - 184

P1-20 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Radiation Tolerance of Si_1-yC_y Source/Drain n-MOSFETs with Different Carbon Concentrations
Author	*Toshiyuki Nakashima (Univ. of Miyazaki/Chuo Denshi Kogyo Co. Ltd., Japan), Yuki Asai, Masato Hori, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura (Kumamoto National College of Tech., Japan), Mireia Bargallo Gonzalez (Institut de Microelectronica de Barcelona, Spain), Eddy Simoen (IMEC, Belgium), Cor Claeys (IMEC/KU Leuven, Belgium), Kenji Yoshino (Univ. of Miyazaki, Japan)
Page	pp. 185 - 186

P1-21 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Extended Poly Gate Effect on the Performance of Strained PMOSFETs with a Narrow Channel Width
Author	Chang-Chun Lee (Chung Yuan Christian Univ., Taiwan), Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan), Hung-Wen Hsu (National Taipei Univ. of Tech., Taiwan), Min-Hui Hung (National Taiwan Normal Univ., Taiwan), *Yin-Hao Lin (Chung Yuan Christian Univ., Taiwan)
Page	pp. 187 - 188

P1-22 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Analysis of Geometric Effects on Channel Stress Due to the Strained CESL and Spacer in MOSFET
Author	*Ming-Jenq Twu (National Taiwan Normal Univ., Taiwan), Kuei-Chih Lin (Ming Chuan Univ., Taiwan), Chuan-Hsi Liu (National Taiwan Normal Univ., Taiwan)
Page	pp. 189 - 190

P1-23 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Strain Evolution in the Channel Region Induced by the Embedded Source and Drain with Graded Epitaxial Si_1-xGe_x Layers
Author	*Sangmo Koo, Sun-Wook Kim, Hyunchul Jang, Dae-Hong Ko (Yonsei Univ., Republic of Korea)
Page	pp. 191 - 192

P1-24 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Fabrication and Characteristic of Ultra-thin Strained SOI by He Implantation and Ion Cut Technique
Author	Zhiqiang Mu, Zhongying Xue, Da Chen, *Miao Zhang, Zengfeng Di, Xi Wang (Chinese Academy of Sciences, China)
Page	pp. 193 - 194

P1-25 (Source/Drain and Channel Engineering as well as Strained Si)

Title	Advanced Germanium Based CMOS with Strain Elements for pMOS and nMOS
Author	*Matthias Bauer (ASM America Inc., U.S.A.)
Page	pp. 195 - 196

P1-26 (Electronic Properties and Device Applications)

Title	Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-Junctions for Low Power Applications
Author	*Minsoo Kim, Younghyun Kim, Masafumi Yokoyama, Ryosho Nakane, SangHyeon Kim, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 197 - 198

P1-27 (Electronic Properties and Device Applications)

Title	Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_1-xGe_x/Si Resonant Tunneling Diode
Author	*Tomoyuki Kawashima, Masao Sakuraba, Junichi Murota (Tohoku Univ., Japan)
Page	pp. 199 - 200

P1-28 (Electronic Properties and Device Applications)

Title	In-Depth Analysis of High-Quality Ge-on-Insulator Structure Formed by Rapid-Melting Growth
Author	*Hironori Chikita, Ryo Matsumura, Yuki Tojo, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 201 - 202

P1-29 (Electronic Properties and Device Applications)

Title	Laterally-Graded P-Doping in GOI Structure by Ion-Implantation and Rapid-Melting-Growth
Author	*Ryo Matsumura, Mohammad Anisuzzaman, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 203 - 204

P1-30 (Electronic Properties and Device Applications)

Title	The Influence of SiO₂ Interfacial Layer Thickness on NBTI Degradation Mechanism of p Channel HfO₂/AlN Gate MOSFETs
Author	*Hanim Hussin (Univ. Teknologi MARA/Univ. of Malaya, Malaysia), Yasmin Abdul Wahab (Univ. of Malaya, Malaysia), Sharifah Shafini Syed Shahabuddin (Univ. of Malaya/Silterra (M) Sdn. Bhd., Malaysia), Norhayati Soin (Univ. of Malaya, Malaysia), Muhamad Faiz Bukhori (Univ. Kebangsaan Malaysia, Malaysia)
Page	pp. 205 - 206

P1-31 (Optical Properties and Device Applications)

Title	Characterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dots
Author	*Takahisa Yamada, Katsunori Makihara, Hiroki Takami, Yoshihisa Suzuki (Nagoya Univ., Japan), Mitsuhisa Ikeda (Hiroshima Univ., Japan), Seiichi Miyazaki (Nagoya Univ., Japan)
Page	pp. 207 - 208

P1-32 (Optical Properties and Device Applications)

Title	Highly N-doped, Tensile-strained Ge Grown on Si by Molecular Beam Epitaxy
Author	*Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki (Tokyo City Univ., Japan)
Page	pp. 209 - 210

P1-33 (Optical Properties and Device Applications)

Title	Carrier Extraction from Ge Quantum Dots in Si Solar Cells
Author	*Takeshi Tayagaki (Kyoto Univ./PRESTO-JST, Japan), Yusuke Hoshi (Tohoku Univ., Japan), Kazufumi Ooi (Kyoto Univ., Japan), Takanori Kiguchi, Noritaka Usami (Tohoku Univ., Japan)
Page	pp. 211 - 212

P1-34 (Optical Properties and Device Applications)

Title	Evaluation of Propagation Loss of Si/SiGe/Si Photonic-Wire Waveguides for Si Based Optical Modulator
Author	*Younghyun Kim (Univ. of Tokyo, Japan), Takenori Osada, Masahiko Hata (Sumitomo Chemical Co. Ltd., Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Page	pp. 213 - 214

P1-35 (Optical Properties and Device Applications)

Title	Control of geometry in Si-Based Photonic Nanostructures Formed by Maskless Wet Etching Process and Its Impact on Optical Properties
Author	*Yusuke Hoshi, Takanori Kiguchi (Tohoku Univ., Japan), Kazufumi Ooi, Takeshi Tayagaki (Kyoto Univ., Japan), Noritaka Usami (Tohoku Univ., Japan)
Page	pp. 215 - 216

P1-36 (Optical Properties and Device Applications)

Title	Surface Plasmon Enhanced Light Emission from Silicon Nanocrystals
Author	*Anis Boudraa (Tokyo Inst. of Tech., Japan), Ayse Seyhan (Tokyo Inst. of Tech./Nigde Univ., Turkey), Yoshifumi Nakamine, Yoshihiro Ogawa, Fujiro Minami, Yukio Kawano, Shunri Oda (Tokyo Inst. of Tech., Japan)
Page	pp. 217 - 218

P1-37 (Optical Properties and Device Applications)

Title	Improvement of Photoluminescence from Ge Layer with Patterned Si₃N₄ Stressors
Author	*Katsuya Oda (PETRA, PECST, Hitachi, Japan), Tadashi Okumura (Hitachi, Japan), Kazuki Tani, Shin-ichi Saito, Tatemi Ido (PETRA, PECST, Hitachi, Japan)
Page	pp. 219 - 220

P1-38 (Germanium Based Semiconductors)

Title	Junctionless GeSn pMOSFETs on Si (111) by Solid Phase Epitaxy
Author	*Tatsuro Maeda, Wipakorn Jevasuwan, Hiroyuki Hattori, Noriyuki Uchida (AIST, Japan), Jean-Pierre Locquet (KU Leuven, Belgium), Ruben Lieten (KU Leuven, IMEC, Belgium)
Page	pp. 221 - 222

P1-39 (Germanium Based Semiconductors)

Title	Lateral Growth Enhancement of Poly-Ge_1-xSn_x on SiO₂ using a Eutectic Reaction
Author	*Masashi Kurosawa (Nagoya Univ., JSPS, Japan), Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka (Nagoya Univ., Japan), Masanobu Miyao (Kyushu Univ., Japan), Shigeaki Zaima (Nagoya Univ., Japan)
Page	pp. 223 - 224

P1-40 (Germanium Based Semiconductors)

Title	Ion Implantation-Induced Defects Generated in PN Junction Formation of Germanium
Author	*Choong Hyun Lee, Tomonori Nishimura, Toshiyuki Tabata, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Page	pp. 225 - 226

P1-41 (Germanium Based Semiconductors)

Title	Melting-Induced-Mixing in a-Ge/Sn/c-Ge Structures for Sn-Doped Ge Films
Author	*Yuki Kinoshita, Yuki Tojo, Ryo Matsumura, Taizoh Sadoh (Kyushu Univ., Japan), Tomoaki Nishimura (Hosei Univ., Japan), Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 227 - 228

P1-42 (Germanium Based Semiconductors)

Title	Tensile-Strained and n-Doped Ge Epilayers Grown on Si(001) by Molecular-Beam Epitaxy
Author	*Kim Phuong Luong, Minh Tuan Dau (Aix-Marseille Univ., France), Abdelhamid Ghrib (Univ. of Paris-Sud, France), Mohammad Zrir, Matthieu Petit, Vinh Le Thanh (Aix-Marseille Univ., France), Moustafa El Kurdi, Philippe Boucaud (Univ. of Paris-Sud, France), Junichi Murota (Tohoku Univ., Japan)
Page	pp. 229 - 230

P1-43 (Germanium Based Semiconductors)

Title	Low-Temperature Formation of SiGe Crystals by Partial-Melting Method in a-GeSn/Si(100) Structure
Author	*Hironori Chikita, Ryo Matsumura, Yuki Tojo, Yuki Kinoshita, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan)
Page	pp. 231 - 232

P1-44 (Germanium Based Semiconductors)

Title	Low-Temperature Formation (~150^oC) of Ge on Insulator through Layer-Exchange of Ge/Sn Stacked-Structures
Author	*Akira Ooato, Tsuneharu Suzuki (Kyushu Univ., Japan), Jong-Hyeok Park (Kyushu Univ./JSPS Research Fellow, Japan), Masanobu Miyao, Taizoh Sadoh (Kyushu Univ., Japan)
Page	pp. 233 - 234

P1-45 (Germanium Based Semiconductors)

Title	Study of Ge Loss during Ge Condensation Process
Author	*Z.Y. Xue, Z.F. Di (Chinese Academy of Sciences, China), L. Ye (Lanzhou Univ., China), Z.Q. Mu (Chinese Academy of Sciences, China), D. Chen (Lanzhou Univ., China), X. Wei, M. Zhang, X. Wang (Chinese Academy of Sciences, China)
Page	pp. 235 - 236

P1-46 (Germanium Based Semiconductors)

Title	Mechanical Property Effects of Si_1-xGe_x Channel and Stressed CESL on Nano-Scaled nMOSFETs
Author	C. C. Lee (Chung Yuan Christian Univ., Taiwan), C. H. Liu (National Taiwan Normal Univ., Taiwan), H. W. Hsu (National Taipei Univ. of Tech., Taiwan), Z. H. Chen, H. H. Teng (National Taiwan Normal Univ., Taiwan), *Y. J. Lai (Chung Yuan Christian Univ., Taiwan)
Page	pp. 237 - 238

P1-47 (Germanium Based Semiconductors)

Title	Impact of Channel Width and Length on Mobility Enhancement of Strained Ge NMOSFET with SiGe Alloy Stressors
Author	*C.-F. Lee, R.-Y He, S. T. Chang (National Chung Hsing Univ., Taiwan)
Page	pp. 239 - 240

P1-48 (Si(Ge)-based materials growth and device fabrication for spintronics)

Title	Stability and Schottky Barrier of Spin-polarized Fe₃Si/Ge Interfaces; First-Principles Study
Author	*Kyosuke Kobinata, Takashi Nakayama (Chiba Univ., Japan)
Page	pp. 241 - 242

P1-49 (Si(Ge)-based materials growth and device fabrication for spintronics)

Title	Magnetic Tunnel Junctions with an L2₁-Co₂FeSi Electrode on Si Fabricated by Room-Temperature Molecular Beam Epitaxy
Author	*Yuichi Fujita, Shinya Yamada, Yuya Maeda, Masanobu Miyao, Kohei Hamaya (Kyushu Univ., Japan)
Page	pp. 243 - 244

P1-50 (Si(Ge)-based materials growth and device fabrication for spintronics)

Title	Improvement of Co₂FeSi_0.5Al_0.5/Si Heterointerfaces for Spin Injectors in Silicon Spintronics
Author	*Kohei Tanikawa, Soichiro Oki, Shinya Yamada, Makoto Kawano, Masanobu Miyao, Kohei Hamaya (Kyushu Univ., Japan)
Page	pp. 245 - 246

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)