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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session C4  Core-to-Core 4
Time: 15:30 - 16:55 Thursday, June 6, 2013

C4-1 (Time: 15:30 - 16:00)
TitlePotential of GeSn and GeSiSn for Future Nanoelectronic Device Applications
AuthorS. Zaima (Nagoya Univ., Japan)

C4-2 (Time: 16:00 - 16:30)
TitleOxygen in Si Epitaxial Growth: from Interface Contamination to Si/O Superlattice Engineering
AuthorM. Caymax, S. Jayachandran, Lu Augustin, A. Delabie, R. Loo, A. Hikavyy, G. Pourtois, W. Vandervorst, M. Heyns (imec, Belgium)

C4-3 (Time: 16:30 - 16:50)
TitleGrowth of Tensile-Strained Germanium and Heavy Phosphorous Doping Using a Specific GaP Decomposition Cell
AuthorK.P. Luong, A. Ghrib, M.T. Dau, M. Petit, M. El-Kurdi, P. Boucaud, V. Le Thanh (Aix-Marseille Univ., France)

C4-4 (Time: 16:50 - 16:55)
TitleClosing
AuthorTBA