ICSI-8 and ISCSI-VI Technical Program

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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session C1 Core-to-Core 1
Time: 9:10 - 11:15 Thursday, June 6, 2013

C1-1 (Time: 9:10 - 9:15)

Title	Opening
Author	TBA

C1-2 (Time: 9:15 - 9:45)

Title	Oxidation of Germanium – What is different from Oxidation of Silicon ?
Author	Akira Toriumi (Univ. Tokyo, Japan)

C1-3 (Time: 9:45 - 10:15)

Title	High Quality Ge Gate Stacks Technologies by Using Plasma Oxidation
Author	Shinichi Takagi, Rui Zhang, Mitsuru Takenaka (Univ. Tokyo, Japan)

C1-4 (Time: 10:15 - 10:45)

Title	Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices
Author	Seiichi Miyazaki, Katsunori Makihara (Nagoya Univ., Japan), Mitsuhisa Ikeda (Hiroshima Univ., Japan)

C1-5 (Time: 10:45 - 11:15)

Title	Comparing Photoluminescence Measurements with Theoretical Predictions for Transition Energies in Ge Quantum Dot Structures
Author	I.A. Fischer, P. Tighineanu, K. Busch, M. Paul, M. Jetter, P. Michler, O. Kirfel, F. Oliveira, E. Rolseth, J. Schulze (Univ. Stuttgart, Germany)