Title | (Invited Paper) Interface Control of GaN-Based Heterostrcutures for Power Switching Transistors |
Author | *Tamotsu Hashizume (Hokkaido Univ./JST-CREST, Japan), Yujin Hori, Taketomo Sato (Hokkaido Univ., Japan) |
Page | pp. 135 - 138 |
Title | (Invited Paper) DLTS Studies of Point Defects in MOCVD n-GaN |
Author | *Yutaka Tokuda (Aichi Inst. of Tech., Japan) |
Page | pp. 139 - 141 |
Title | AC Operation of Low-Mg-Doped p-GaN Schottky Diodes |
Author | *Toshichika Aoki (Univ. of Fukui, Japan), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable Ltd., Japan), Kenji Shiojima (Univ. of Fukui, Japan) |
Page | pp. 143 - 144 |
Title | Totally Wet Process Based on Photoelectrochemical Techniques for GaN Schottky Contacts |
Author | *Koki Kitazawa, Akihiro Koyama, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ., Japan) |
Page | pp. 145 - 146 |