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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session B4  GaN Related Technologies
Time: 15:30 - 17:10 Thursday, June 6, 2013
Chairs: T. Hashizume (Hokkaido Univ., Japan), K. Shiojima (Univ. of Fukui, Japan)

B4-1 (Time: 15:30 - 16:00)
Title(Invited Paper) Interface Control of GaN-Based Heterostrcutures for Power Switching Transistors
Author*Tamotsu Hashizume (Hokkaido Univ./JST-CREST, Japan), Yujin Hori, Taketomo Sato (Hokkaido Univ., Japan)
Pagepp. 135 - 138

B4-2 (Time: 16:00 - 16:30)
Title(Invited Paper) DLTS Studies of Point Defects in MOCVD n-GaN
Author*Yutaka Tokuda (Aichi Inst. of Tech., Japan)
Pagepp. 139 - 141

B4-3 (Time: 16:30 - 16:50)
TitleAC Operation of Low-Mg-Doped p-GaN Schottky Diodes
Author*Toshichika Aoki (Univ. of Fukui, Japan), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable Ltd., Japan), Kenji Shiojima (Univ. of Fukui, Japan)
Pagepp. 143 - 144

B4-4 (Time: 16:50 - 17:10)
TitleTotally Wet Process Based on Photoelectrochemical Techniques for GaN Schottky Contacts
Author*Koki Kitazawa, Akihiro Koyama, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ., Japan)
Pagepp. 145 - 146