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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session B3  Schottky & Gate Oxide
Time: 13:45 - 15:15 Thursday, June 6, 2013
Chairs: R. T. Tung (City Univ. of New York, U.S.A.), T. Ito (Osaka Univ., Japan)

B3-1 (Time: 13:45 - 14:15)
Title(Invited Paper) Schottky Barrier Height Adjustment through Interface Structure Engineering
Author*Raymond T. Tung (Brooklyn College/City Univ. of New York, U.S.A.)
Pagepp. 127 - 128

B3-2 (Time: 14:15 - 14:35)
TitleHfO2-assisted SiO2 Reduction in HfO2/SiO2/Si Stacks
Author*Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan)
Pagepp. 129 - 130

B3-3 (Time: 14:35 - 14:55)
TitleImpact of Oxidation Pressure on the Band Alignment at GeO2/GeProbed by Internal Photoemission Spectroscopy
Author*W.F. Zhang, Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo/JST, CREST, Japan)
Pagepp. 131 - 132

B3-4 (Time: 14:55 - 15:15)
TitleImpacts of AlGeO Formation by Post Thermal Oxidation of Al2O3/Ge Structure on Interface Properties
Author*Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 133 - 134