Title | (Invited Paper) Schottky Barrier Height Adjustment through Interface Structure Engineering |
Author | *Raymond T. Tung (Brooklyn College/City Univ. of New York, U.S.A.) |
Page | pp. 127 - 128 |
Title | HfO2-assisted SiO2 Reduction in HfO2/SiO2/Si Stacks |
Author | *Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo, Japan) |
Page | pp. 129 - 130 |
Title | Impact of Oxidation Pressure on the Band Alignment at GeO2/GeProbed by Internal Photoemission Spectroscopy |
Author | *W.F. Zhang, Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo/JST, CREST, Japan) |
Page | pp. 131 - 132 |
Title | Impacts of AlGeO Formation by Post Thermal Oxidation of Al2O3/Ge Structure on Interface Properties |
Author | *Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan) |
Page | pp. 133 - 134 |