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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session B2  Next-Generation Materials
Time: 11:15 - 12:45 Thursday, June 6, 2013
Chairs: A. Toriumi (The Univ. of Tokyo, Japan), K. Sato (JSTA, Japan)

B2-1 (Time: 11:15 - 11:45)
Title(Invited Paper) Materials and Processes for Next-Generation Innovative Devices
Author*Katsuaki Sato (Japan Science and Technology Agency, Japan)
Pagepp. 119 - 120

B2-2 (Time: 11:45 - 12:05)
TitleGrowth Promotion of Al-Induced Crystallized Ge Thin-Films on Insulators by Enhancing Ge-Supply into Al Layers
Author*Kaoru Toko, Ryohei Numata, Koki Nakazawa (Univ. of Tsukuba, Japan), Noritaka Usami (Tohoku Univ., Japan), Takashi Suemasu (Univ. of Tsukuba, Japan)
Pagepp. 121 - 122

B2-3 (Time: 12:05 - 12:25)
TitleFormation of Tetragonal ZrO2 Thin Film by ALD Method
Author*Kimihiko Kato, Takatoshi Saito, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 123 - 124

B2-4 (Time: 12:25 - 12:45)
TitleSilicon-Germanium-Tin Microstructures Obtained through Mask Projection Assisted Pulsed Laser Induced Epitaxy
Author*Stefan Stefanov, Carmen Serra, Alessandro Benedetti, Jorge Carlos Conde (Univ. de Vigo, Spain), Jens Werner, Michael Oehme, Jörg Schulze (Institut für Halbleitertechnik (IHT), Germany), Stephan Wirths, Dan Mihai Buca (Forschungszentrum Jülich GmbH, Germany), Stefano Chiussi (Univ. de Vigo, Spain)
Pagepp. 125 - 126