| Title | (Invited Paper) Synthesis and Properties of Si-Ge-Sn Materials and Devices Grown by CVD |
| Author | *John Kouvetakis (Arizona State Univ., U.S.A.) |
| Page | pp. 47 - 48 |
| Title | Epitaxial Growth of Strained and Unstrained GeSn Alloys up to 20 % Sn |
| Author | *Michael Oehme, Konrad Kostecki, Marc Schmid, Erich Kasper, Jörg Schulze (Univ. Stuttgart, Germany) |
| Page | pp. 49 - 50 |
| Title | Composition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition |
| Author | *Wei Wang, Yosuke Shimura (IMEC, Belgium), Thomas Nieddu (Univ. of Liege, Belgium), Federica Gencarelli, Benjamin Vincent (IMEC, Belgium), Ngoc Duy Nguyen (Univ. of Liege, Belgium), Wilfried Vandervorst, Roger Loo (IMEC, Belgium) |
| Page | pp. 51 - 52 |
| Title | SiGeSn Growth Studies using Reduced Pressure CVD Towards Optoelectronic Applications |
| Author | *Stephan Wirths (Forschungszentrum Jülich GmbH, Peter Gruenberg Institute, Germany), Dan Buca (Forschungszentrum Jülich GmbH, Germany), Zoran Ikonic, Paul Harrison (Univ. of Leeds, U.K.), Andreas T. Tiedemann, Bernd Holländer, Gregor Mussler, Uwe Breuer, Detlev Grützmacher, Siegfried Mantl (Forschungszentrum Jülich GmbH, Germany) |
| Page | pp. 53 - 54 |
| Title | Pulsed Laser Induced Epitaxy of Silicon Germanium Tin Alloys |
| Author | *Stefan Stefanov, Alessandro Benedetti, Jorge Carlos Conde (Univ. de Vigo, Spain), Jens Werner, Michael Oehme, Jörg Schulze (Institut für Halbleitertechnik (IHT), Germany), Stephan Wirths, Dan Mihai Buca (Forschungszentrum Jülich GmbH, Germany), Stefano Chiussi (Univ. de Vigo, Spain) |
| Page | pp. 55 - 56 |