Title | Top-Down Approach to Controllably Induce Ultra High Strain in Si and Ge |
Author | *Renato Amaral Minamisawa (Paul Scherrer Institut, Switzerland), Martin J Süess (ETHZ, Switzerland), Richard Geiger (Paul Scherrer Institut, Switzerland), Ralph Spolenak, Jerome Faist (ETHZ, Switzerland), Christian David, Jens Gobrecht (Paul Scherrer Institut, Switzerland), Jacopo Frigerio, Daniel Chrastina, Giovanni Isella (Politecnico di Milano, Italy), Konstantin K. Bourdelle (SOITEC, France), Hans Sigg (Paul Scherrer Institut, Switzerland) |
Page | pp. 107 - 108 |
Title | Formation of (Si:CP) Layer through In-Situ Doping and Implant Process for nMOS Devices |
Author | *Shogo Mochizuki (IBM Research, Japan), Zhengmao Zhu, Rainer Loesing, Anthony Domenicucci, Philip Flaitz, Vamsi Paruchuri (IBM, U.S.A.) |
Page | pp. 109 - 110 |
Title | HCl Defect Revelation in SiGe Virtual Substrates: a Systematic Study |
Author | *Jean-Michel Hartmann (CEA-LETI, France), Alexandra Abbadie (SOITEC, France) |
Page | pp. 111 - 112 |
Title | Phosphorus Atomic Layer Doping in SiGe using RPCVD |
Author | *Yuji Yamamoto, Bernd Heinemann (IHP, Germany), Junichi Murota (Tohoku Univ., Japan), Bernd Tillack (IHP and TU Berlin, Germany) |
Page | pp. 113 - 114 |
Title | Characterization of Interface Properties of Au/Al2O3/GeOx/Ge MOS Structures |
Author | *Ju-Chin Lin, Rui Zhang (Univ. of Tokyo, Japan), Noriyuki Taoka (Nagoya Univ., Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan) |
Page | pp. 115 - 116 |
Title | Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers |
Author | *Takanori Asano, Shohei Kidowaki (Nagoya Univ., Japan), Masashi Kurosawa (Research Fellow of the Japan Society for the Promotion of Science/Nagoya Univ., Japan), Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan) |
Page | pp. 117 - 118 |