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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session AB3  Process Technologies
Time: 9:00 - 11:00 Thursday, June 6, 2013
Chairs: Y. Kunii (Hitachi Kokusai Electric Inc., Japan), O. Nakatsuka (Nagoya Univ., Japan)

AB3-1 (Time: 9:00 - 9:20)
TitleTop-Down Approach to Controllably Induce Ultra High Strain in Si and Ge
Author*Renato Amaral Minamisawa (Paul Scherrer Institut, Switzerland), Martin J Süess (ETHZ, Switzerland), Richard Geiger (Paul Scherrer Institut, Switzerland), Ralph Spolenak, Jerome Faist (ETHZ, Switzerland), Christian David, Jens Gobrecht (Paul Scherrer Institut, Switzerland), Jacopo Frigerio, Daniel Chrastina, Giovanni Isella (Politecnico di Milano, Italy), Konstantin K. Bourdelle (SOITEC, France), Hans Sigg (Paul Scherrer Institut, Switzerland)
Pagepp. 107 - 108

AB3-2 (Time: 9:20 - 9:40)
TitleFormation of (Si:CP) Layer through In-Situ Doping and Implant Process for nMOS Devices
Author*Shogo Mochizuki (IBM Research, Japan), Zhengmao Zhu, Rainer Loesing, Anthony Domenicucci, Philip Flaitz, Vamsi Paruchuri (IBM, U.S.A.)
Pagepp. 109 - 110

AB3-3 (Time: 9:40 - 10:00)
TitleHCl Defect Revelation in SiGe Virtual Substrates: a Systematic Study
Author*Jean-Michel Hartmann (CEA-LETI, France), Alexandra Abbadie (SOITEC, France)
Pagepp. 111 - 112

AB3-4 (Time: 10:00 - 10:20)
TitlePhosphorus Atomic Layer Doping in SiGe using RPCVD
Author*Yuji Yamamoto, Bernd Heinemann (IHP, Germany), Junichi Murota (Tohoku Univ., Japan), Bernd Tillack (IHP and TU Berlin, Germany)
Pagepp. 113 - 114

AB3-5 (Time: 10:20 - 10:40)
TitleCharacterization of Interface Properties of Au/Al2O3/GeOx/Ge MOS Structures
Author*Ju-Chin Lin, Rui Zhang (Univ. of Tokyo, Japan), Noriyuki Taoka (Nagoya Univ., Japan), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo, Japan)
Pagepp. 115 - 116

AB3-6 (Time: 10:40 - 11:00)
TitleInfluence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers
Author*Takanori Asano, Shohei Kidowaki (Nagoya Univ., Japan), Masashi Kurosawa (Research Fellow of the Japan Society for the Promotion of Science/Nagoya Univ., Japan), Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ., Japan)
Pagepp. 117 - 118