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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session AB2  Channel Formation & Nano Devices
Time: 16:50 - 18:20 Wednesday, June 5, 2013
Chairs: A. Chin (National Chiao Tung Univ., Taiwan), N. Koshida (Tokyo Univ. of Agri. and Tech., Japan)

AB2-1 (Time: 16:50 - 17:10)
TitleReduced-Pressure Chemical Vapor Deposition of Boron-Doped Ge Layers
Author*Yann Bogumilowicz, Jean-Michel Hartmann (CEA, France)
Pagepp. 99 - 100

AB2-2 (Time: 17:10 - 17:30)
TitleFormation of High Mobility Channel III-V and Ge Layer onto 300 mm Si Wafers utilizing Pattern Epitaxial Lift-Off Technique
Author*Eiko Mieda, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Yuichi Kurashima, Atsuhiko Maeda, Hideki Takagi (AIST, Japan), Takeshi Aoki, Taketsugu Yamamoto, Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical Co., Ltd., Japan), Arito Ogawa, Toshiyuki Kikuchi, Yasuo Kunii (Hitachi Kokusai Electric Inc., Japan)
Pagepp. 101 - 102

AB2-3 (Time: 17:30 - 17:50)
TitleUltra High Hole Mobilities in a Pure Strained Ge Quantum Well
Author*Oleg Mironov, Amna Hassan (Univ. of Warwick, U.K.), S. Kiatgamolchai (Chulalongkorn Univ., Thailand), M. Uhlarz (Dresden High Magnetic Field Laboratory (HLD), Germany), A. Dobbie, R.J.H. Morris (Univ. of Warwick, U.K.), E. Cizmar, A. Feher (P.J. Safarik Univ., Slovakia), S. Gabani (Institute of Experimental Physics SAS, Slovakia), V Shah, M Myronov, D.R. Leadley (Univ. of Warwick, U.K.)
Pagepp. 103 - 104

AB2-4 (Time: 17:50 - 18:20)
Title(Invited Paper) Ballistic Electron Emission from Nanostructured Si Diode and Its Applications
Author*Nobuyoshi Koshida, N. Ikegami, A. Kojima, R Mentek (Tokyo Univ. of Agri. and Tech., Japan), B. Gelloz (Nagoya Univ., Japan), N. Mori (Osaka Univ., Japan)
Pagepp. 105 - 106