Title | Reduced-Pressure Chemical Vapor Deposition of Boron-Doped Ge Layers |
Author | *Yann Bogumilowicz, Jean-Michel Hartmann (CEA, France) |
Page | pp. 99 - 100 |
Title | Formation of High Mobility Channel III-V and Ge Layer onto 300 mm Si Wafers utilizing Pattern Epitaxial Lift-Off Technique |
Author | *Eiko Mieda, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Yuichi Kurashima, Atsuhiko Maeda, Hideki Takagi (AIST, Japan), Takeshi Aoki, Taketsugu Yamamoto, Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical Co., Ltd., Japan), Arito Ogawa, Toshiyuki Kikuchi, Yasuo Kunii (Hitachi Kokusai Electric Inc., Japan) |
Page | pp. 101 - 102 |
Title | Ultra High Hole Mobilities in a Pure Strained Ge Quantum Well |
Author | *Oleg Mironov, Amna Hassan (Univ. of Warwick, U.K.), S. Kiatgamolchai (Chulalongkorn Univ., Thailand), M. Uhlarz (Dresden High Magnetic Field Laboratory (HLD), Germany), A. Dobbie, R.J.H. Morris (Univ. of Warwick, U.K.), E. Cizmar, A. Feher (P.J. Safarik Univ., Slovakia), S. Gabani (Institute of Experimental Physics SAS, Slovakia), V Shah, M Myronov, D.R. Leadley (Univ. of Warwick, U.K.) |
Page | pp. 103 - 104 |
Title | (Invited Paper) Ballistic Electron Emission from Nanostructured Si Diode and Its Applications |
Author | *Nobuyoshi Koshida, N. Ikegami, A. Kojima, R Mentek (Tokyo Univ. of Agri. and Tech., Japan), B. Gelloz (Nagoya Univ., Japan), N. Mori (Osaka Univ., Japan) |
Page | pp. 105 - 106 |