Title | (Invited Paper) SiGe Channel Gate Stack Scaling: Oxygen Scavenging and Full Metal Gates |
Author | *Martin M. Frank, Takashi Ando, Eduard A. Cartier, John Bruley (IBM, U.S.A.), Lisa F. Edge (IBM Research, U.S.A.), Vijay Narayanan (IBM, U.S.A.) |
Page | pp. 91 - 92 |
Title | (Invited Paper) High Channel Mobility Ge nMOSFET with Good Source-Drain Ohmic Contact and Small EOT |
Author | *Albert Chin (National Chiao Tung Univ., Taiwan) |
Page | pp. 93 - 94 |
Title | Metal Source/Drain Ge p-MOSFET with HfGe/Ge Contact |
Author | *Keisuke Yamamoto, Takahiro Sada, Haigui Yang, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan) |
Page | pp. 95 - 96 |
Title | Atomic Layer Doping of Ge and Strained GeOI at High Carrier Densities |
Author | *Wolfgang Matthias Klesse, Giordano Scappucci (Univ. of New South Wales, Australia), Giovanni Capellini (Univ. degli Studi Roma Tre, Italy), Jean-Michel Hartmann (CEA, LETI, France), Michelle Yvonne Simmons (Univ. of New South Wales, Australia) |
Page | pp. 97 - 98 |