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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session AB1  SiGe/Ge MOSFET
Time: 14:55 - 16:35 Wednesday, June 5, 2013
Chairs: K. Kobayashi (Tokai Univ., Japan), T. Tuchiya (Shimane Univ., Japan)

AB1-1 (Time: 14:55 - 15:25)
Title(Invited Paper) SiGe Channel Gate Stack Scaling: Oxygen Scavenging and Full Metal Gates
Author*Martin M. Frank, Takashi Ando, Eduard A. Cartier, John Bruley (IBM, U.S.A.), Lisa F. Edge (IBM Research, U.S.A.), Vijay Narayanan (IBM, U.S.A.)
Pagepp. 91 - 92

AB1-2 (Time: 15:25 - 15:55)
Title(Invited Paper) High Channel Mobility Ge nMOSFET with Good Source-Drain Ohmic Contact and Small EOT
Author*Albert Chin (National Chiao Tung Univ., Taiwan)
Pagepp. 93 - 94

AB1-3 (Time: 15:55 - 16:15)
TitleMetal Source/Drain Ge p-MOSFET with HfGe/Ge Contact
Author*Keisuke Yamamoto, Takahiro Sada, Haigui Yang, Dong Wang, Hiroshi Nakashima (Kyushu Univ., Japan)
Pagepp. 95 - 96

AB1-4 (Time: 16:15 - 16:35)
TitleAtomic Layer Doping of Ge and Strained GeOI at High Carrier Densities
Author*Wolfgang Matthias Klesse, Giordano Scappucci (Univ. of New South Wales, Australia), Giovanni Capellini (Univ. degli Studi Roma Tre, Italy), Jean-Michel Hartmann (CEA, LETI, France), Michelle Yvonne Simmons (Univ. of New South Wales, Australia)
Pagepp. 97 - 98