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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session A7  Hetero-Exitaxy on Si
Time: 9:00 - 10:30 Wednesday, June 5, 2013
Chairs: T. Ogino (Yokohama National Univ., Japan), H. von Känel (ETH-Zürich, Swaziland)

A7-1 (Time: 9:00 - 9:30)
Title(Invited Paper) 3D Heteroepitaxy of Mismatched Semiconductors on Silicon
AuthorClaudiu V. Falub, A.G. Taboada, T. Kreiliger (ETH Zürich, Switzerland), F. Isa, D. Chrastina, G. Isella (Politecnico di Milano, Italy), M. Meduňa (Masaryk Univ., Czech Republic), F. Pezzoli, R. Bergamaschini, A. Marzegalli, L. Miglio (Univ. di Milano-Bicocca, Italy), E. Müller (ETH-Zürich, Switzerland), A. Neels, P. Niedermann, A. Dommann (Swiss Center for Electronics & Microtechnology (CSEM), Switzerland), *H. von Känel (ETH-Zürich, Switzerland)
Pagepp. 69 - 70

A7-2 (Time: 9:30 - 9:50)
TitleHeteroepitaxial Growth of Ge on Compliant Strained Nanostructured Si Lines and Dots on (001) SOI Substrate
Author*Peter Zaumseil, Yuji Yamamoto, Markus Andreas Schubert (IHP, Germany), Thomas Schroeder (IHP/Brandenburgische TU Cottbus, Germany), Bernd Tillack (IHP/TU Berlin, Germany)
Pagepp. 71 - 72

A7-3 (Time: 9:50 - 10:10)
TitleFormation of Ge(111) on Insulator by Ge Epitaxy on Si(111) and Layer Transfer
Author*K. Sawano, Y. Hoshi, S. Endo, H. Katsumata, T. Nagashima (Tokyo City Univ., Japan), K. Arimoto, J. Yamanaka, K. Nakagawa (Univ. of Yamanashi, Japan), K. Hamaya, M. Miyao (Kyushu Univ., Japan), Y. Shiraki (Tokyo City Univ., Japan)
Pagepp. 73 - 74

A7-4 (Time: 10:10 - 10:30)
TitleSelf-Assembled Si/Ge Quantum Dot Crystals: Growth Optimization towards Ultra High Densities
Author*Svetlana Borisova, Jürgen Moers, Gregor Mussler, Detlev Grützmacher (Forschungszentrum Jülich GmbH, Germany)
Pagepp. 75 - 76