Title | (Invited Paper) 3D Heteroepitaxy of Mismatched Semiconductors on Silicon |
Author | Claudiu V. Falub, A.G. Taboada, T. Kreiliger (ETH Zürich, Switzerland), F. Isa, D. Chrastina, G. Isella (Politecnico di Milano, Italy), M. Meduňa (Masaryk Univ., Czech Republic), F. Pezzoli, R. Bergamaschini, A. Marzegalli, L. Miglio (Univ. di Milano-Bicocca, Italy), E. Müller (ETH-Zürich, Switzerland), A. Neels, P. Niedermann, A. Dommann (Swiss Center for Electronics & Microtechnology (CSEM), Switzerland), *H. von Känel (ETH-Zürich, Switzerland) |
Page | pp. 69 - 70 |
Title | Heteroepitaxial Growth of Ge on Compliant Strained Nanostructured Si Lines and Dots on (001) SOI Substrate |
Author | *Peter Zaumseil, Yuji Yamamoto, Markus Andreas Schubert (IHP, Germany), Thomas Schroeder (IHP/Brandenburgische TU Cottbus, Germany), Bernd Tillack (IHP/TU Berlin, Germany) |
Page | pp. 71 - 72 |
Title | Formation of Ge(111) on Insulator by Ge Epitaxy on Si(111) and Layer Transfer |
Author | *K. Sawano, Y. Hoshi, S. Endo, H. Katsumata, T. Nagashima (Tokyo City Univ., Japan), K. Arimoto, J. Yamanaka, K. Nakagawa (Univ. of Yamanashi, Japan), K. Hamaya, M. Miyao (Kyushu Univ., Japan), Y. Shiraki (Tokyo City Univ., Japan) |
Page | pp. 73 - 74 |
Title | Self-Assembled Si/Ge Quantum Dot Crystals: Growth Optimization towards Ultra High Densities |
Author | *Svetlana Borisova, Jürgen Moers, Gregor Mussler, Detlev Grützmacher (Forschungszentrum Jülich GmbH, Germany) |
Page | pp. 75 - 76 |