Title | Coherent Lateral-Growth of Ge over Insulating Film by Rapid-Melting-Crystallization |
Author | *Taizoh Sadoh, Masashi Kurosawa, Kaoru Toko, Masanobu Miyao (Kyushu Univ., Japan) |
Page | pp. 39 - 40 |
Title | Exploring the Potentiality of Disilane for the Very Low Temperature Epitaxy of SiGe |
Author | *Jean-Michel Hartmann, Veronique Benevent, Marc Veilllerot (CEA-LETI, Minatec Campus, Grenoble, France), Aomar Halimaoui (STMicroelectronics, Crolles, France) |
Page | pp. 41 - 42 |
Title | Dynamics Analysis of Rapid-Melting Growth using SiGe on Insulator |
Author | *Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ., Japan) |
Page | pp. 43 - 44 |
Title | Influence of Growth Temperature on Strain Relaxation of Thin Ge Films on Si(001) Grown by Carbon-Mediated Epitaxy |
Author | *Dominic Tetzlaff, Tobias F. Wietler, Eberhard Bugiel, H. Jörg Osten (Leibniz Univ. Hannover, Germany) |
Page | pp. 45 - 46 |