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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session A5  SiGe/Ge Epitaxy I
Time: 9:00 - 10:30 Tuesday, June 4, 2013
Chairs: J. Zhang (Univ. of New South Wales, Australia), J.-M. Hartmann (CEA-LETI, France)

A5-1 (Time: 9:00 - 9:30)
Title(Invited Paper) Site-Controlled SiGe Islands on Patterned Si(001): Morphology, Composition Profiles, and Devices
Author*Jianjun Zhang (IFW Dresden, Germany/Univ. Linz, Austria/Univ. of New South Wales, Australia), Armando Rastelli (IFW Dresden, Germany/Univ. Linz, Austria), Nina Hrauda (Univ. Linz, Austria), Georgios Katsaros (IFW Dresden, Germany/Univ. Linz, Austria), Heiko Groiss, Julian Stangl, Friedrich Schäffler (Univ. Linz, Austria), Oliver G. Schmidt (IFW Dresden, Germany), Günther Bauer (Univ. Linz, Austria)
Pagepp. 31 - 32

A5-2 (Time: 9:30 - 9:50)
TitleChemical Vapor Deposition Processes for the Fabrication of Epitaxial Si-O Superlattices
Author*Annelies Delabie, Suseendran Jayachandran, Matty Caymax, Roger Loo, Jens Maggen, Johan Meersschaut, Haraprasanna Lenka, Wilfried Vandervorst, Marc Heyns (IMEC, Belgium)
Pagepp. 33 - 34

A5-3 (Time: 9:50 - 10:10)
TitleEpitaxial Ge/Metallic Silicide Grown on Si with Atomically Smooth Heterointerfaces
Author*Shinya Yamada, Makoto Kawano, Kohei Tanikawa (Kyushu Univ., Japan), Kentarou Sawano (Tokyo City Univ., Japan), Masanobu Miyao, Kohei Hamaya (Kyushu Univ., Japan)
Pagepp. 35 - 36

A5-4 (Time: 10:10 - 10:30)
TitleIntroducing Batch Epitaxy into High Volume Production for SiGe Channel Deposition
Author*Carsten Reichel, Joerg Schoenekess, Andreas Dietel (GLOBALFOUNDRIES Dresden, Germany)
Pagepp. 37 - 38