Title | (Invited Paper) Epitaxial Growth Challenges for Advanced CMOS Devices |
Author | *Roger Loo, Andriy Hikavyy, Benjamin Vincent, Liesbeth Witters, Geert Eneman, Jerome Mitard, Erik Rosseel (imec, Belgium), Sathish Kumar Dhayalan (imec/KU Leuven, Belgium), Vladimir Machkaoutsan, Harald B. Profijt (ASM, Belgium), Rita Rooyackers, Anne Vandooren (imec, Belgium), Wilfried Vandervorst (imec/KU Leuven, Belgium), Aaron Thean, Matty Caymax (imec, Belgium) |
Page | pp. 23 - 24 |
Title | Record High Mobility of 2 × 106 cm2/V in Strained Si |
Author | *S.-H. Huang (National Taiwan Univ., Taiwan), T. -M. Lu (Princeton Univ., U.S.A.), C. -H. Lee, S. -C. Lu, C. W. Liu (National Taiwan Univ., Taiwan), D. C. Tsui (Princeton Univ., U.S.A.) |
Page | pp. 25 - 26 |
Title | Application of Selective Epitaxial Growth for Merging Fins in Source/Drain Areas of sub 20 nm FinFET Transistors |
Author | *Andriy Hikavyy, Soon Aik Chew, Guillaume Boccardi, Paola Favia, Roger Loo (IMEC, Belgium) |
Page | pp. 27 - 28 |
Title | Reduction of Contact Resistance on Selectively Grown Phosphorus-Doped n+-Ge Layers |
Author | *Yoshihiko Moriyama (AIST/Osaka Univ., Japan), Yuuichi Kamimuta, Yoshiki Kamata, Keiji Ikeda (AIST, Japan), Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ., Japan), Tsutomu Tezuka (AIST, Japan) |
Page | pp. 29 - 30 |