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The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and
the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Session A4  S/D Technology for Strained MOSFETs
Time: 15:40 - 17:10 Monday, June 3, 2013
Chairs: A. Sakai (Osaka Univ., Japan), S. Takagi (The Univ. of Tokyo, Japan)

A4-1 (Time: 15:40 - 16:10)
Title(Invited Paper) Epitaxial Growth Challenges for Advanced CMOS Devices
Author*Roger Loo, Andriy Hikavyy, Benjamin Vincent, Liesbeth Witters, Geert Eneman, Jerome Mitard, Erik Rosseel (imec, Belgium), Sathish Kumar Dhayalan (imec/KU Leuven, Belgium), Vladimir Machkaoutsan, Harald B. Profijt (ASM, Belgium), Rita Rooyackers, Anne Vandooren (imec, Belgium), Wilfried Vandervorst (imec/KU Leuven, Belgium), Aaron Thean, Matty Caymax (imec, Belgium)
Pagepp. 23 - 24

A4-2 (Time: 16:10 - 16:30)
TitleRecord High Mobility of 2 × 106 cm2/V in Strained Si
Author*S.-H. Huang (National Taiwan Univ., Taiwan), T. -M. Lu (Princeton Univ., U.S.A.), C. -H. Lee, S. -C. Lu, C. W. Liu (National Taiwan Univ., Taiwan), D. C. Tsui (Princeton Univ., U.S.A.)
Pagepp. 25 - 26

A4-3 (Time: 16:30 - 16:50)
TitleApplication of Selective Epitaxial Growth for Merging Fins in Source/Drain Areas of sub 20 nm FinFET Transistors
Author*Andriy Hikavyy, Soon Aik Chew, Guillaume Boccardi, Paola Favia, Roger Loo (IMEC, Belgium)
Pagepp. 27 - 28

A4-4 (Time: 16:50 - 17:10)
TitleReduction of Contact Resistance on Selectively Grown Phosphorus-Doped n+-Ge Layers
Author*Yoshihiko Moriyama (AIST/Osaka Univ., Japan), Yuuichi Kamimuta, Yoshiki Kamata, Keiji Ikeda (AIST, Japan), Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ., Japan), Tsutomu Tezuka (AIST, Japan)
Pagepp. 29 - 30