| Speaker |
Institution | Country | Title |
| Dan Mihai Buca | Forschungszentrum Juelich GmbH | Germany | Design and growth of strained Ge/(Si)GeSn heterostructures for optical and electrical applications |
| Rodolfo Camacho-Aguilera | Massachusetts Institute of Technology | USA | CMOS Ge LASER: a bridge to the optical network |
| Albert Chin | National Chiao Tung Univ. | Taiwan | High Channel Mobility Ge nMOSFET with Good Source-Drain Ohmic Contact and Small EOT |
| Giovanni Capellini | Università Roma Tre, IHP- Innovations for High Performance Microelectronics |
Italy, Germany |
Strained Germanium Heterostructures for Infrared and Thz Light Emission |
| Mark A. Eriksson | University of Wisconsin-Madison | USA | Measurements of a Hybrid Qubit for Silicon Quantum Computing |
| Claudiu V. Falub | ETH Zürich (ETHZ) | Switzerland | 3D Heteroepitaxy of Mismatched Semiconductors on Silicon |
| Martin M. Frank | IBM T.J. Watson Research Center | USA | SiGe Channel Gate Stack Scaling: Oxygen scavenging and full metal gates |
| Kohei Hamaya | Kyushu University | Japan | SiGe Spintronics with High-quality Ferromagnetic Metal-Semiconductor Heterostructures |
| Nobuyoshi Koshida | Tokyo University of Agri. & Tech. | Japan | Ballistic Electron Emission from Nanostructured Si Diode and Its Applications |
| John Kouvetakis | Arizona State University | USA | Synthesis and Properties of Si-Ge-Sn Materials and Devices Grown by CVD |
| Roger Loo | IMEC | Belgium | Epitaxial Growth Challenges for Advanced CMOS Devices |
| Yasuyoshi Nagai | Tohoku University | Japan | In-depth Analysis of Defects and Impurities in Nano-scale Transistor Structures by 3D Atom Probe (tentative) |
| Michelle Y. Simmons | University of New South Wales | Australia | Phosphorous Donor Qubits in Silicon |
| Jianjun Zhang | Institute for Integrative Nanosciences, IFW Dresden | Germany | Site-controlled SiGe islands on patterned Si(001): Morphology, composition profiles, and devices |
| Speaker |
Institution | Country | Title |
| Tamotsu Hashizume | Hokkaido University | Japan | Interface Control of GaN-Based Heterostrcutures for Power Switching Transistors |
| Katsuaki Sato | Tokyo University of Agriculture and Technology | Japan | Materials and Processes for Next-Generation Innovative Devices |
| Tokuyuki Teraji | NIMS | Japan | P-Type Diamond Schottky Interfaces -Current Transport Mechanisms and Thermal Stability |
| Yutaka Tokuda | Aichi Institute of Technology | Japan | DLTS Studies of Point Defects in MOCVD n-GaN |
| Raymond T. Tung |
Brooklyn College, City University of New York | USA | Schottky Barrier Height Adjustment through Interface Structure Engineering |